Generation of entangled photon pairs is an essential part for optical quantum computer, quantum communication, and quantum sensing. Among many approaches, spontaneous parametric down conversion (SPDC) has been widely used because of its room temperature operation, high purity, and relatively easy experimental implementation. To generate 1550 nm entangled photons via SPDC process, spectrally tunable, single-mode 775 nm bulk lasers are commonly used. However, more compact, photonic-integrated 775 nm laser diodes are highly desirable for chip-scale quantum photonic applications. In our lab, we investigate epitaxially grown III-V quantum-well (QW) structures on GaAs substrates targeting 780 nm emission, which can serve as efficient pump sources for future integrated quantum light generation and quantum photonic laser applications.
Generation of entangled photon pairs is an essential part for optical quantum computer, quantum communication, and quantum sensing. Among many approaches, spontaneous parametric down conversion (SPDC) has been widely used because of its room temperature operation, high purity, and relatively easy experimental implementation. To generate 1550 nm entangled photons via SPDC process, spectrally tunable, single-mode 775 nm bulk lasers are commonly used. However, more compact, photonic-integrated 775 nm laser diodes are highly desirable for chip-scale quantum photonic applications. In our lab, we investigate epitaxially grown III-V quantum-well (QW) structures on GaAs substrates targeting 780 nm emission, which can serve as efficient pump sources for future integrated quantum light generation and quantum photonic laser applications.
