Atomic layer deposition (ALD) is a self-limiting film deposition technique employing surface-driven chemical reactions by alternating exposure of chemical species; precursors and reactants, and hence the desired thin film growth ideally undergoes in a layer-by-layer manner.
By virtue of the surface reaction feature of ALD, it has unique properties, such as excellent conformality, atomic scale fidelity, and large-area uniformity which are very essential prerequisite for advanced nanodevice fabrications.
A representative example of cyclic ALD reactions is schematically depicted in the right images, and for more information, please refer to the online video below.