Patents

Atomic Craft & Engineering Laboratory @ Hanyang University

Granted

[17] “Method of deposition and method of fabricating electronic device using the same,” Woo-Hee Kim, Jinseon Lee, Jeong-Min Lee, Daehyun Kim, Changhan Kim, Pub. No.: US 2023/11834742 (Appl. No.: 17/588,134, 2022.01.28), United States, 2023.12.05.

[16] “인히비터 패턴을 포함하는 박막 구조체 및 그 제조 방법,” 김우희, 이정민 ("Thin film structure including inhibitor pattern and method of fabricating of the same," Woo-Hee Kim, Jeong-Min Lee) 10-2600517, Korea, 2023.11.06.

[15] “원자층 증착법을 이용한 칼코지나이드 박막의 선택적 증착 방법,” 이한보람, 김우희  (“Method for Selectively Depositing Dichalcogenide Thin Film using Atomic Layer Deposition,” Han-Bo-Ram Lee, Woo-Hee Kim), 10-2299665, Korea, 2021.09.02. 

[14] “선택적 증착법을 이용한 적층가능한 기판의 결합방법,” 김우희, 유봉영, 박태주, 김대현  (“Method For Bonding Substrates Using Area-Selective Deposition,” Woo-Hee Kim, Bongyoung Yoo, Tae Joo Park, Dae Hyun Kim), 10-2264508, Korea, 2021.06.04. 

[13] “선택적 증착에 의한 메모리 소자 결함 회복 방법,” 이한보람, 김우희 (“Defect healing method by selective deposition for DRAM application,” Han-Bo-Ram Lee, Woo-Hee Kim), 10-2225183, Korea, 2021.03.03.

[12] “원자력 현미경용 프로브 및 이의 제조 방법,” 김우희, 서정대, 손종역 (“A Probe for atomic force microscopy, and a method for manufacturing the same,” Woo-Hee Kim, Jeongdae Seo, Jong Yeog Son), 10-2137442, Korea, 2020.07.20.

[11] “목재 소재의 항균 코팅 방법,” 김우희, 오일권 (“Method for antimicrobial coating of wood,” Woo-Hee Kim, Il-Kwon Oh), 10-2097549, Korea, 2020.03.31.

[10] “무한 선택비를 갖는 원자층증착법을 이용한 패턴의 제조 방법,” 김우희, 서정대, 박운용, 이진선, 하경렬 (“Method for manufacturing pattern using infinite area-selective atomic layer deposition,” Woo-Hee Kim, Jeongdae Seo, Woon-Yong Park, Jin-Seon Lee, Kyung-Ryul Ha), 10-2027776, Korea, 2019.09.26.

[9] “Methods comprising an atomic layer deposition sequence,” John, A. Smythe, Woohee Kim, Stefan Uhlenbrock, Pub. No.: US 2019/0206674 (Appl. No. 15/860,388 2018.01.02), United States, 2019.07.04.

[8] “Memory Arrays, and Methods of Forming Memory Arrays,” David A. Daycock, Richard J. Hill, Christopher J. Larsen, Woohee Kim, Justin B, Dorhout, Brett D. Lowe, John D. Hopkins, Qian Tao, David A. Daycock, Barbara L. Casey, Pub. No.: US 2018/021921 (Appl. No. 15/422,335, 2017.02.01), United States, 2018.08.02.

[7] “Semiconductor devices and methods of fabricating semiconductor devices,” Kuk-Hwan Kim, Jongho Lee, Woo-Hee Kim, Nae-In Lee, Pub. No.: US 2015/0187763 (Appl. No.: US 14/489,900, 2014.09.18), United States, 2015.07.02.

[6] “Semiconductor device and method for fabricating the same,” Woo-Hee Kim, Nae-In Lee, Kuk-Hwan Kim, Jongho Lee, Pub. No.: US 2014/0363960 (Appl. No.: US 14/271,909, 2014.05.07), United States, 2014.12.11.

[5] “Methods for manufacturing high dielectric constant films,” Woo-Hee Kim, Min-Kyu Kim, Hyungjun Kim, Steven Hung, Atif Noori, David Thompson, Jeffrey W. Anthis, Pub. No.: US 2012/0270409 (Appl. No.: US 13/437,305, 2012.04.02) United States, 2012.10.25

[4] “태양전지 및 태양전지 제조방법,” 김도영, 김형준, 김우희, 김민규 (“A solar cell and a method for making the solar cell,” Doyoung Kim, Hyungjun Kim, Woo-Hee Kim, Min-Kyu Kim), 10-1195040, Korea, 2012.10.22

[3] “반도체 소자 및 그 제조 방법,” 김형준, 김우희, 맹완주 (“Semiconductor device and method for forming the semiconductor,” Hyungjun Kim, Woo-Hee Kim, Wan Joo Maeng), 10-1081949, Korea, 2011.11.03

[2] “선택적 증착법을 이용한 반도체 소자의 콘택트 형성방법,” 이한보람, 김우희, 김형준 (“Method for forming contacts of semiconductor devices using the selective depositon,” Han-Bo-Ram Lee, Woo-Hee Kim, Hyungjun Kim), 10-1078309, Korea, 2011.10.25

[1] “양극 산화 알루미늄과 원자층 증착 공정을 이용한 루테늄 나노 구조물의 제조방법,” 김우희, 손종역, 김형준 (“Manufacturing method for nano-structures by anodic aluminum oxide and atomic layer deposition,” Woo-Hee Kim, Jong Yeog Son, Hyungjun Kim), 10-0973522, Korea, 2010.07.27

Pending

[31] “원자층 식각을 이용한 금속 산화물층 식각 방법,” 박건수, 김우희, 송정규, 이정빈, 최원식, 김범석, 김정태, 이주호 ("Method for etching metal oxide layer using atomic layer etching," Kunsu Park, Woo-Hee Kim, Jeong-Gyu Song, Jeongbin Lee, Wonsik Choi, Beomseok Kim, Jung Tae Kim, Jooho Lee), 10-2024-0008286, Korea, 2024.01.18.

[30] “반도체 공정용 조성물 및 반도체 소자의 제조 방법,” 이지훈, 곽정훈, 정성웅, 김우희, 이정민, 이서현  ("Composition for semiconductor process and manufacturing method of semiconductor device,"  Ji Hun Lee, Junghun Kwak, Sungwoong Chung, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee), 10-2023-0144207, Korea, 2023.10.25.

[29] “초박형 금속 박막의 제조 방법 및 제조 장치,” 김우희, 이정빈, 김정태 ("Manufacturing method and manufacturing device for ultra-thin metal thin film," Woo-Hee Kim, Jeongbin Lee, Jung Tae Kim), 10-2023-0126020, Korea, 2023.09.21.

[28] “영역 선택적 원자층 증착법, 이를 위한 장치, 및 이를 통해 제조된 HZO 물질막 구조체,” 김우희, 안지훈, 이정민, 김효배 ("Area-selective atomic layer deposition method, apparatus therefor, and HZO material film structure manufactured through the same," Woo-Hee Kim, Ji-Hoon Ahn, Jeong-Min Lee, Hyo-Bae Kim), 10-2023-0107693, Korea, 2023.08.17.

[27] “아미노실란계 전구체를 이용한 실리콘 산화막의 선택적 증착 방법,” 정성웅, 곽정훈, 이지훈, 김우희, 이정민, 이서현 ("Method for selectively depositing silicon oxide layer using aminosilane type precursor," Sungwoong Chung, Junghun Kwak, Ji Hun Lee, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee), Appl. No.: PCT/KR2023/008300, PCT, 2023.06.15.

[26] “Substrate processing method and selective deposition method using the same,” Sungwoong Chung, Junghun Kwak, Ji Hun Lee, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee, Appl. No.: 112109553, Taiwan, 2023.03.15.

[25] “Substrate processing method and selective deposition method using the same,” Sungwoong Chung, Junghun Kwak, Ji Hun Lee, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee, Appl. No.: 2023-040352, Japan, 2023.03.15.

[24] “Substrate Processing Method and Selective Deposition Method using the Same,” Sungwoong Chung, Junghun Kwak, Ji Hun Lee, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee, Appl. No.: 18/113,974, United States, 2023.02.24.

[23] “기판 처리 방법 및 이를 사용한 선택적 증착 방법,” 정성웅, 곽정훈, 이지훈, 김우희, 이정민, 이서현  ("Substrate Processing Method and Selective Deposition Method using the Same," Sungwoong Chung, Junghun Kwak, Ji Hun Lee, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee), 10-2023-0019757, Korea, 2023.02.15.

[22] “기판 처리 방법 및 이를 이용한 영역 선택적 박막 증착 방법, 정성웅, 곽정훈, 이진희, 이지훈, 김우희, 이정민, 이서현 ("Substrate processing method and area selective thin film deposition method using the substrate processing method," Sungwoong Chung, Junghun Kwak, Jin hee Lee, Ji Hun Lee, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee), 10-2022-0133777, Korea, 2022.10.18

[21] “초박형 금속 박막 제조를 위한 통합 원자층 증착 및 원자층 식각 방법,” 김우희, 이정빈, 김정태 ("Integrated atomic layer deposition and atomic layer etching methods for forming ultrathin metal thin films," Woo-Hee Kim, Jeongbin Lee, Jung Tae Kim), 10-2022-0118971, Korea, 2022.09.21.

[20] “루테늄 박막의 저온 원자층 식각법,” 김우희, 이정빈, 김정태 ("Methods for low temperature atomic layer etching of ruthenium thin films," Woo-Hee Kim, Jeongbin Lee, Jung Tae Kim), 10-2022-0114106, Korea, 2022.09.08.

[19] “기판 처리 방법 및 기판 처리 장치,” 최성빈, 김윤상, 진영조, 전영은, 김우희, 이정빈 ("Substrate processing method and substrate processing apparatus," Cheng Bin Cui, Yun Sang Kim, Young Jo Jin, Young Eun Jeon, Woo-Hee Kim, Jeongbin Lee), 10-2022-0102904, Korea, 2022.08.17. 

[18] “아미노실란계 전구체를 이용한 실리콘 산화막의 선택적 증착 방법,” 정성웅, 곽정훈, 이지훈, 김우희, 이정민, 이서현 ("Method for selectively depositing silicon oxide layer using aminosilane type precursor," Sungwoong Chung, Junghun Kwak, Ji Hun Lee, Woo-Hee Kim, Jeong-Min Lee, Seo-Hyun Lee), 10-2022-0073907, Korea, 2022.06.17.

[17] “Method of deposition and method of fabricating electronic device using the same,” Woo-Hee Kim, Jinseon Lee, Jeong-Min Lee, Daehyun Kim, Changhan Kim, Appl. No.: 17/588,134, United States, 2022.01.28.

[16] “Method of area-selective deposition and method of fabricating an electronic device using the same,” Woo-Hee Kim, Jinseon Lee, Daehyun Kim, Changhan Kim, Appl. No.: 17/584,273, United States, 2022.01.25.

[15] “고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치,” 김우희, 이정빈 ("Atomic layer etching method and atomic layer etching apparatus for high-k thin films," Woo-Hee Kim, Jeongbin Lee),  10-2021-0190279, Korea, 2021.12.28.

[14] “촉매 반응 기반 원자층 식각 방법,” 김우희, 이정민, 이정빈 ("Atomic layer etching process based on catalytic reaction," Woo-Hee Kim, Jeong-Min Lee, Jeongbin Lee), 10-2021-0190274, Korea, 2021.12.28.

[13] “단쇄 알칸티올 표면 억제 분자를 이용한 영역 선택적 원자층 증착법,” 김우희, 이정빈 (“Method of achieving area-selective atomic layer deposition using short-chain alkanethiol inhibitors,” Woo-Hee Kim, Jeongbin Lee), 10-2021-0142613, Korea, 2021.10.25.

[12] “자기제한반응을 이용한 원자층 식각 방법,” 김우희, 이정빈 (“Atomic layer etching using self-limiting reaction,” Woo-Hee Kim, Jeongbin Lee), 10-2021-0102707, Korea, 2021.10.14.

[11] “인히비터 패턴을 포함하는 박막 구조체 및 그 제조 방법,” 김우희, 이정민 ("Thin film structure including inhibitor pattern and method of fabricating of the same," Woo-Hee Kim, Jeong-Min Lee) 10-2021-0019849, Korea, 2021.02.15.

[10] “선택적 영역 증착 방법 및 이를 적용한 전자 소자의 제조 방법,” 김우희, 이진선, 이정민, 김대현, 김창한 (“Method of area-selective deposition and method of fabricating electronic device using the same,” Woo-Hee Kim,  Jinseon Lee, Jeong-Min Lee, Daehyun Kim, Changhan Kim), 10-2021-0013344, Korea, 2021.01.29.

[9] “영역 선택적 원자층 증착 방법,” 박환열, 김우희, 박태주, 경세진, 김일우, 이정민, 이정빈 (“Method of area selective-atomic layer deposition,” Hwan Yeol Park, Woo-Hee Kim, Tae Joo Park, Se Jin Kyung, Il Woo Kim, Jeong Min Lee,  Jeong Bin Lee) 10-2021-0013416, Korea, 2021.01.29.

[8] “선택적 영역 증착 방법 및 이를 적용한 전자 소자의 제조 방법,” 김우희, 이진선, 김대현, 김창한 (“Method of area-selective deposition and method of fabricating electronic device using the same,” Woo-Hee Kim,  Jinseon Lee, Daehyun Kim, Changhan Kim), 10-2021-0010480, Korea, 2021.01.25. 

[7] “원자층 증착법을 이용한 칼코지나이드 박막의 선택적 증착 방법,” 이한보람, 김우희 (“Method for Selectively Depositing Dichalcogenide Thin Film using Atomic Layer Deposition,” Han-Bo-Ram Lee, Woo-Hee Kim), 10-2019-0098393, Korea, 2019.08.12. 

[6] “Integrated Assemblies Having Charge-Trapping Material Arranged in Vertically-Spaced Segments, and Methods of Forming Integrated Assemblies,” Woohee Kim, John, D. Hopkins, Changhan Kim, Appl. No. 16/162,672, United States, 2018.10.17.

[5] “원자간력현미경 팁 및 이의 제조 방법,” 김우희, 서정대, 손종역 (“Atomic force microscope tip and its manufacturing method,” Woo-Hee Kim, Jeongdae Seo, Jong Yeog Son), 10-2018-0115781, Korea, 2018.09.28.

[4] “무한 선택비를 갖는 원자층증착법을 이용한 패턴의 제조 방법,” 김우희, 서정대, 박운용, 이진선, 하경렬 (“Method for manufacturing pattern using infinite area-selective atomic layer deposition,” Woo-Hee Kim, Jeongdae Seo, Woon-Yong Park, Jin-Seon Lee, Kyung-Ryul Ha), 10-2018-0105184, Korea, 2018.09.04. 

[3] “목재 소재의 항균 코팅 방법,” 김우희, 오일권 (“Method for antimicrobial coating of wood,” Woo-Hee Kim, Il-Kwon Oh), 10-2018-0103532, Korea, 2018.08.31.

[2] “반도체 장치 및 그 제조 방법,” 김국환, 이종호, 김우희, 이내인 (“Semiconductor package and method for fabricating the same,” Kuk-Hwan Kim, Jongho Lee, Woo-Hee Kim, Nae-In Lee), 10-2013-0165541, Korea, 2013.12.27.

[1] “반도체 장치 및 그 제조 방법,” 김우희, 이내인, 김국환, 이종호 (“Semiconductor device and method for the same,” Woo-Hee Kim, Nae-In Lee, Kuk-Hwan Kim, Jongho Lee), 10-2013-0064761, Korea, 2013.06.05.