Area Selective Deposition (ASD, aka. AS-ALD; Area selective atomic layer deposition) is a method suitable for patterning with nanoscale dimensions that enables selective growth of thin films in conjunction with surface modification.
By virtue of the topographically selective growth of ASD, it is attracting increasing interest to enable both continued dimensional scaling and accurate pattern placement which are very essential prerequisite for advanced nanodevice fabrications.
A representative example of ASD reactions is schematically depicted in the right images, and for more information, please refer to the online video below.