As a long term research, it is necessary to explore new functional devices for “High Capacitance”, “Fast Operation Speed”, and “Energy Saving” by utilizing not only electron but also photon, exciton, and quantum. 

For this, we actively collaborate with internal and international experts. 

(†equal contribution), (*correspondence)

[1] “Two-dimensional Materials Prospects for Non-volatile Spintronic Memories” Nature, 606 (7915), 663-673, 2022

    Hyunsoo Yang*, Sergio O. Valenzuela*, Mairbek Chshiev, Sébastien Couet, Bernard Dieny, Bruno Dlubak, Albert Fert, Kevin Garello, Matthieu Jamet, Dae-  Eun Jeong, Kangho Lee, Taeyoung Lee, Marie-Blandine Martin, Gouri Sankar Kar, Pierre Sénéor, Hyeon-Jin Shin, Stephan Roche* 

[2] “Promises and prospects of two-dimensional transistors” Nature, 591 (7848), 43-53, 2021

     Yuan Liu, Xidong Duan, Hyeon-Jin Shin, Seongjun Park, Yu Huang, Xiangfeng Duan* 

[3] “Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV” Nano Letters, 19 (4), 2411-2417, 2019

    Renjing Xu†, Houk Jang†, Min-Hyun Lee, Dovran Amanov, Yeonchoo Cho, Haeryong Kim, Seongjun Park, Hyeon-Jin Shin*, Donhee Ham* 

[4] “Triboelectric series of two-dimensional layered materials” Advanced Materials, 30 (39), 1870294, 2018

     Minsu Seol†, Seongsu Kim†, Yeonchoo Cho, Kyung-Eun Byun, Haeryong Kim, Jihye Kim, Sung Kyun Kim, Sang-Woo Kim*, Hyeon-Jin Shin*, Seongjun Park