Introducing new materials into conventional Si device structures requires various innovations in adjacent technologies to improve device performance. For example, replacing Si channels in transistors with TMD (e.g. MoS2) materials requires the study of interface properties such as channel doping, contact resistance, adhesion to surrounding materials, EOT scaling, and patterning methods. 

We demonstrate new concepts in interface engineering and develop integrated technologies with Si process compatibility to enable the performance required for future devices.

(†equal contribution), (*correspondence)

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    Van Luan Nguyen, Minsu Seol, Junyoung Kwon, Eun-Kyu Lee, Won-Jun Jang, Hyo Won Kim, Ce Liang, Jong Hoon Kang, Jiwoong Park, Min Seok Yoo, Hyeon-Jin Shin* 

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     Min-Hyun Lee, Yeonchoo Cho, Kyung-Eun Byun, Keun Wook Shin, Seong-Geol Nam, Changhyun Kim, Haeryong Kim, Sang-A Han, Sang-Woo Kim, Hyeon-Jin Shin*, Seongjun Park 

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     Hyeon-Jin Shin, Won Mook Choi, Dukhyun Choi, Gang Hee Han, Seon-Mi Yoon, Hyun-Kyu Park, Sang-Woo Kim, Yong Wan Jin, Sang Yoon Lee, Jae-Young Choi*, Young Hee Lee* 

[4] “Tailoring Electronic Structures of Carbon Nanotubes by Solvent with Electron-Donating and -Withdrawing Groups” Journal of the American Chemical Society, 130 (6), 2062-2066, 2008

     Hyeon-Jin Shin, Soo Min Kim, Seon-Mi Yoon, Anass Benayad, Ki Kang Kim, Sung Jin Kim, Hyun Ki Park, Jae-Young Choi*, Young Hee Lee*