A. DEVELOPMENT OF ADVANCED 2D MATERIALS GROWTH & PROPERTY (BEYOND SI MATERIALS) 

2D Materials are good candidates for the Angstrom era. This is because it is an ultra-thin layered material with less than 1nm (10A) and has a perfect crystal structure with stable surface state. In addition, it is composed of various characteristics such as Metals, Semiconductors, and Insulator, which are the major components of electronic devices. 

In order to realize the Angstrom era with 2D Materials, we develop advanced growth in large areas considering industriallization. We also discover new novel peoperties of the materials by hybrid structure with various nano-materials.

Applications: Interconnect (Metal, Diffusion Barrier), Heat Dissipation Layer

Applications: Active Layer in Logic and Memory Device 

Applications: Interconnect (Low-k, Diffusion Barrier), Heat Dissipation Layer

SELECTED PAPERS

(equal contribution), (*correspondence)

[1] “Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase-Transition Induced Growth” Advanced Materials, 34, 2103286, 2022 

     Ahrum Sohn†, Changhyun Kim†, Jae-Hwan Jung†, Jung Hwa Kim, Kyung-Eun Byun, Yeonchoo Cho, Pin Zhao, Sang Won Kim, Minsu Seol, Zonghoon Lee, Sang-Woo Kim*, Hyeon-Jin Shin

[2] “Ultralow-dielectric-constant amorphous boron nitride” Nature, 582 (7813), 511-514, 2020

    Seokmo Hong, Chang-Seok Lee, Min-Hyun Lee, Yeongdong Lee, Kyung Yeol Ma, Gwangwoo Kim, Seong In Yoon, Kyuwook Ihm, Ki-Jeong Kim, Tae Joo Shin, Sang Won Kim, Eun-chae Jeon, Hansol Jeon, Ju-Young Kim, Hyung-Ik Lee, Zonghoon Lee, Aleandro Antidormi, Stephan Roche, Manish Chhowalla*, Hyeon-Jin Shin*, Hyeon Suk Shin* 

[3] “High-throughput Growth of Wafer-scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening” Advanced Materials, 32 (42), 2003542, 2020  

    Minsu Seol†, Min-Hyun Lee†, Haeryong Kim†, Keun Wook Shin, Yeonchoo Cho, Insu Jeon, Myoungho Jeong, Hyung-Ik Lee, Jiwoong Park, Hyeon-Jin Shin

[4] “Formation of hexagonal boron nitride by metal atomic vacancy-assisted B-N molecular diffusion” ACS Nano, 9 (1), 633–638, 2015  

     Seongjun Park, Jinyeong Lee, Han Sol Kim, Jong-Bong Park, Kang Hyuck Lee, Sang A Han, Sungwoo Hwang, Sang-Woo Kim*, Hyeon-Jin Shin

[5] “Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films” Angewandte Chemie International Edition, 53 (43), 11493-11497, 2014

      Kang Hyuck Lee, Hyeon-Jin Shin, Brijesh Kumar, Han Sol Kim, Jinyeong Lee, Ravi Bhatia, Sang-Hyeob Kim, In-Yeal Lee, Hyo Sug Lee, Gil-Ho Kim, Ji-Beom Yoo, Jae-Young Choi*,  Sang-Woo Kim* 

[6] “Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics” Nano Letters, 12 (2), 714-718, 2012

      Kang Hyuck Lee, Hyeon-Jin Shin†, Jinyeong Lee, In-yeal Lee, Gil-Ho Kim, Jae-Young Choi*,  Sang-Woo Kim* 

[7] “Transfer-Free Growth of Few-Layer Graphene by Self-Assembled Monolayers” Advanced Materials, 23 (38), 4392-4397, 2011

     Hyeon-Jin Shin, Won Mook Choi, Seon-Mi Yoon, Gang Hee Han, Yun Sung Woo, Eun Sung Kim, Seung Jin Chae, Xiang-Shu Li, Anass Benayad, Duong Dinh Loc, Fethullah Gunes, Young Hee Lee*, Jae-Young Choi* 

[8] “Efficient Reduction of Graphite Oxide by Sodium Borohydride and Its Effect on Electrical Conductance” Advanced Functional Materials, 19 (12), 1987–1992, 2009 (Advanced in Advance)

    Hyeon-Jin Shin, Ki Kang Kim, Anass Benayad, Seon-Mi Yoon, Hyeon Ki Park, In-Sun Jung, Mei Hua Jin, Hae-Kyung Jeong, Jong Min Kim, Jae-Young Choi*, Young Hee Lee*