Thesis
Topics for the Master's Thesis – Solid State Physics in MBE Lab
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Master’s thesis topics in MBE Lab cover relevant research areas such as electronic properties of bulk and nanostructured materials, crystal structures and material properties of semiconductors and superconductors.
Students will explore the MBE crystal fabrication process, focusing on atomic-level thin film deposition. Key research areas include fundamentals of growth, fabrication of high-performance semiconductors, quantum materials, and heterostructures (such as InGaN/Si, GaN, NbN, BN, 2D materials, etc.). All these systems are crucial for the development of advanced sensing, electronic and quantum photonic devices.
MBE techniques are applicable to a wide range of materials, providing students with significant opportunities to explore diverse areas of materials science.
Different experimental techniques (Optical spectroscopy, XRD diffraction, Microscopy, etc) will used by the students to characterize the structure and the electronic properties of the fabricated materials.
Research in the MBE Lab contributes to advancements in high-performance devices like quantum sensors, making the thesis highly relevant to cutting-edge technological applications.
The MBE Lab promotes collaboration with experts in materials science and condensed matter physics, enhancing students' research networks and opening doors to future academic or industry roles.
Possibility of stages via Erasmus (or ExtraUE) program are possible in France, Germany, Denmark, Japan.
Using MBE, students will design and fabricate semiconductor quantum dot with optimized electronic properties for enhanced photodetection. They will use advanced characterization mathods (XRD, SEM, AFM, PL, etc) to measure the optical and structural properties of the photodetectors, assessing performance under various conditions.
Students will design and fabricate semiconductor quantum dots heterostructures that are suitable for creating efficient photovoltaic cells based on the intermediate band design. They will control material composition, layer thickness, quantum dot electronic structure and doping to achieve desired electronic properties.
Students will fabricate single and entangled photon sources for quantum information and communication applications. The students will develop innovative growth protocols to and self-assemble semiconductor quantum dots with optimized quantum properties for non-classical emitters. An innovative growth method, Droplet Epitaxy, wil be used to control self-assembly dynamics and to guarantee a fine tuning of the shape, size, and density.
Students will work on Quantum Dot technology using Droplet Epitaxy. Students will investigate the fundamentals of quantum dot self-assembly in order to control size, shape, and composition. Fundamental growth topics as nucleation, superuniformity, instabilities, etc. as well as various materials combinations to optimize quantum dot properties for specific applications will be investigated.
Students will fabricate nanostructured materials, focusing on InN quantum dots on InGaN nanocolumns, for biomedical applications. Based on experimental results, students will work on optimizing the sensor materials and device designs to improve their performance as biomedical sensors, focusing on aspects like miniaturization, biocompatibility, and ease of integration with wearable technology.
Using MBE students will grow ultra-pure NbN films, focusing on optimizing growth parameters to achieve high material quality essential for superconducting qubits with high critical temperatures and long coherence times. Students will measure the superconducting properties of the NbN films, including critical temperature, critical current, and coherence times.
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