MEMS sensor for seismic monitoring 

GaN and Beyond: Nobel Laureate in Physics Prof. Hiroshi Amano at the University of Milano-Bicocca

On April 7th, 2025, the University of Milano-Bicocca had the distinct honor of conferring an Honorary Degree in Materials Science and Nanotechnology upon Professor Hiroshi Amano, recipient of the 2014 Nobel Prize in Physics. He was awarded the Nobel Prize alongside Isamu Akasaki and Shuji Nakamura "for the invention of efficient blue light-emitting diodes, which have enabled bright and energy-saving white light sources."

The prestigious ceremony was attended by several institutional representatives, including Prof. Marco Emilio Orlandi, Deputy Rector of Milano-Bicocca, and Prof. Piercarlo Mustarelli, Director of the Department of Materials Science. The laudatio was delivered by Prof. Stefano Sanguinetti, Vice Director of the Department, who highlighted the major milestones of Professor Amano’s career and emphasized the pioneering nature and importance of his work in the field of wide-bandgap semiconductors.

Among the distinguished guests were Francesca Cucchiara, Councilor of the City of Milan, and Giulio Gallera, President of the Special PNRR Commission of the Lombardy Region. Both speakers underscored the importance of fundamental and applied research in advancing regional innovation and societal well-being. Paolo Guazzotti, representing Assolombarda as Director of Innovation, Finance, and Energy, emphasized the transformative role of LED technology for industrial growth, smart cities, and everyday life.

During the event, Professor Amano delivered a lectio magistralis titled “Role of GaN-Based Materials in Realizing a Net-Zero Carbon and Smart Society.” His lecture offered a compelling overview of how GaN and related ultra-wide-bandgap semiconductors are enabling energy-efficient technologies beyond lighting — including high-performance power electronics, renewable energy systems, and advanced communication technologies operating at millimeter-wave and terahertz frequencies.

The talk resonated with all attendees, as LED lighting is now part of everyday life — present in nearly every home, school, and public space. For our research group, which has long-standing expertise in GaN epitaxy and III-nitride semiconductor materials, the event held even greater significance.

We are particularly enthusiastic about the opportunity to begin a collaboration with Professor Hiroshi Amano, exploring new directions in GaN-based materials and contributing to the development of next-generation, sustainable technologies.

Advancing InGaN Biosensors: Our Recent Results from the Euro MBE 2025 Conference

ICG2025 Conference in Lecce: MBE Group from Milano-Bicocca University presents latest advances in crystal growth of III-nitride semiconductors

Our research group participated in the Italian Crystal Growth 2025 (ICG2025) Conference, held at the Department of Innovation Engineering, University of Salento, Lecce, from January 19th-22nd, 2025. The conference focused on recent developments and trends in crystal growth. Topics covered included the fundamentals of crystal growth, modeling, bulk and epitaxial growth, nanoepitaxy processes. The development of inorganic, organic, and hybrid crystalline materials was also discussed, with particular attention given to functional applications in photonics, photovoltaics, quantum technologies, and other industrial sectors.

From our group, Artur Tuktamyshev presented an invited talk on “O-band telecom single photon emission from droplet epitaxy InAs QDs” focusing on advancements in quantum optics. PhD student Matteo Canciani shared his research on "Nanostructured InN/InGaN on Si(111) for Biomedical Applications," supported by the ANTHEM project (PNC0000003), highlighting the potential of these materials in medical applications. Angela Garofalo presented her work on the “Model of Quality Factor vs (111) 3C-SiC Layer Thickness,” offering new insights into material properties and performance.

Our recent research and activities highlighted the critical role of III-nitride semiconductors, such as GaN and InGaN, in diverse applications driven by their unique electronic, optical, and thermal properties. We demonstrated how Molecular Beam Epitaxy (MBE) of GaN, InGaN nanostructures enables precise control over material growth at the atomic scale, paving the way for high-performance devices and deepening our understanding of the fundamental physics governing semiconductor behavior.

Advancements in MBE: Our PhD Student's Experience at the Workshop on Epitaxy of III-V Semiconductors 

Our PhD student, Davide Lambardi, attended the Workshop on Epitaxy of III-V Semiconductors and German MBE, held in Berlin from December 11–13, 2024. The event, organized by the Paul Drude Institute, Fraunhofer Institute for Telecommunications, and Leibniz Institute, focused on advancements in Molecular Beam Epitaxy (MBE) and the epitaxy of various materials. The program included invited talks, short presentations, and electronic poster sessions, fostering scientific exchange among experts in the field. The workshop also featured an industrial exhibition, showcasing the latest MBE technologies. The event aimed to promote collaboration and knowledge sharing within the MBE and epitaxy communities. Our PhD student gained valuable career insights, developed technical and analytical skills, and was inspired to explore new research directions. These experiences enhanced both his academic growth and professional prospects.