Atomic Layer Deposition

The project focuses on Atomic Layer Deposition (ALD), a thin film deposition technique used in nanotechnology to create extremely thin film layers at an atomic scale. Enhancing the efficiency and productivity of depositing metal layers onto wafers is crucial for various applications within semiconductor manufacturing, including the production of integrated circuits and microelectronics. This project involves using trimethylaluminum and water as precursors for a two-step/self-limiting reaction on a silicon dioxide substrate, resulting in the development of a sub-layer of aluminum oxide on top of the substrate. The optimization process involves consistently employing the ALD window and adjusting parameters such as temperature, deposition rate, and cycles to achieve a uniform and ideal thickness of the sub-layer. Proper adjustments address constraints encountered during the layer development process, such as uniformity, conductivity, and resistivity, with minimal energy or material input. Ultimately, this optimization aims to achieve higher throughput and better yields for future applications of thin film deposition.