Transistori 2N2222A
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HIGH SPEED SWITCHES
DESCRIPTION
Transistors are designed for
high speed switching application
at collector current up to 500mA.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Peak Current (tp < 5 ms)
Total Dissipation at Tamb < 25 oC
Storage Temperature
Max. Operating Junction Temperature
THERMAL DATA
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified)
Test Conditions
Min.
Typ.
Max.
DC Current Gain
Small Signal Current Gain
Transition Frequency
Emitter-Base Capacitance
Noise Figure
Input Impedance
Delay Time
Rise Time
Fall Time