INRIM will bring experience and facilities on advanced nano- and microfabrication with technologies including electron-beam and photolithography, focused ion beam milling, dry etching of metals and semiconductors, and various deposition techniques. In this JRP, the role of INRIM is devoted to the development, fabrication of JTWPA circuits in Al technology coupled and integrated with quantum devices fabricated by mean of shadow mask lithography. Preliminary characterization will be performed in INRIM in order to assess the noise squeezing capability and to quantify the noise temperature of the fabricated amplifiers. A cryogenic setup for metrological validation measurements based on tunable single photon sources coupled to JTWPA will be implemented during the project.