Compounds

Overview

The II-IV-N₂ semiconductors are derived from the III-N wurtzite structure semiconductors (e.g. GaN) by replacing the group III sublattice by an ordered cation sublattice composed of group II and group IV elements.

Here we provide for each material in the list the following information, when available:

1) Structural parameters: Lattice constants and atomic positions

2) Synthesis: Synthesis techniques

3) Band structure data: band gaps, effective masses at band edges, band structure figures

4) Vibrational properties: phonon frequencies and Born effective charges

5) Elastic properties: bulk moduli, elastic stiffness and compliance tensor, piezo-electric tensor and spontaneous polarization

6) Dielectric and optical properties: dielectric constants at high frequency, static dielectric constants, index of refraction, nonlinear optical coefficients

Reviews

W. R. L. Lambrecht and A. Punya, Heterovalent ternary II-IV-N₂ compounds: Perspectives for a new class of wide-bandgap nitrides, in III-Nitride Semiconductors and their Modern Devices, edited by B. Gil (Oxford University Press, Oxford, U.K., 2013), pp. 519–585.