ZnGeSiN2

Contents.

• Crystal Structures

• Synthesis and Growth Methods

• Applications

ZnGe_xSi_1-xN₂

Crystal Structure

Spacegroup: Pna2₁ .

Point group: C_2v

_{Synthesis and Growth Methods}

High crystalline quality epitaxial layers of hexagonal ZnGe_xSi_1-xN₂ have been grown by low pressure MOCVD technique on sapphire and SiC substrates in a 650°C to 800°C temperatue range, with using a thin low temperature GaN buffer as a nucleation layer[1]

Electronic Properties

Figure 1 : Bandgap of ZnGe_xSi_1-xN₂ vs Germanium Composition [1]

Other data:

Figure 2: Lattice Constant vs Bandgap of ZnGe_xSi_1-xN₂ [2]

Applications

Mn²⁺ implanted ZnGe_xSi_1-xN₂ is a promising for dilute magnetic semiconductor:

The synthesis of dilute magnetic semiconductors can be done by introducing magnetic ions into variety of host materials. The magnetization of ferromagnetic semiconductors can be manipulated through applied electric fields or changes in carrier density through doping or illumination by photons.

Magnetization curves

^{Figure 3: (a). Magnetization Curve for 100 K of ZnSiN}₂ implanted with Mn+ and annealed at 700 C

(b).^{Magnetization Curve for 100 K of ZnSiGeN}₂ implanted with Mn+ and annealed at 700 C [3]

ZnGeSiN₂ films implanted with Mn⁺ dose concentration of 5 at. % show magnetic ordering temperatures in the range of 200–280 K.[3]

_References

[1]. Osinsky at al, 2000 IEEE/Cornell Conf.High Perf. Dev., 2000, p. 168.

_{[2]. John Muth at al (2004) MRS E11, 45.}

_{[3]. S. J. Pearton at al,Journal of App. Phy., vol 92, 4.}