Field of Research

RESEARCH INTEREST: Broad research area is nanoelectronics and spintronics. Research interests include VLSI/CAD design for classical CMOS, non-classical CMOS and non-CMOS (non-Silicon) technologies [which center around the emerging nanoelectronics and spintronics devices like HEMT (high electron mobility transistor), SiC MOSFET, CNFET (Carbon Nanotube Field Effect Transistor) and STT (spin transfer torque)-based MTJ (magnetic tunnel junction)], SET (Single Electron Transistor), Multivalued Logic, SRAM (Static random Access Memory), RRAM (resistive random access memory), PCRAM (Phase Change Random Access Memory), STT-MTJ based MRAM (magnetic random access memory), power- and variability-aware design, RF nanoscale device and circuit modeling, design of ultralow-power nanoscale circuits for portable/wearable/energy-harvesting applications.