EC509_RFMCD_Syllabus

EC509 RF Microelectronics Circuit Design

Module -1:

RF frequency response of BJT and MOSFET:

Bipolar Junction Transistor frequency response: Small-Signal Model, High-Frequency Effects, Transition Frequency (fT) as a Function of Current, Noise in BJT: Thermal Noise, Shot Noise, 1/f Noise, Base Shot Noise, Noise Sources in the Transistor Model, BJT Design Considerations, power-frequency limitation; MOS Transistor frequency Response: Small-Signal Model, Transition Frequency (fT) and Maximum oscillation (fmax) for MOSFET; Practical Considerations in Transistor Layout: Typical Transistors, Symmetry, Matching.                                                                               (8L)

Module -2:

RF technology and basic concepts in RF design:                          

Introduction to RF and Wireless Technology: Challenges in RF Design, Complexity Comparison, Design Bottleneck, Applications, Choice of Technology; Basic concepts in RF Design: Units in RF Design, Time Variance, Nonlinearity, Effects of nonlinearity; Noise as Random Process, effect of transfer function on noise, device Noise, Representation of Noise in Circuits. Sensitivity and Dynamic Range.                                                                                                   (8L)

Module -3: 

Communication concepts and transceiver architectures:

Analog modulation, Digital modulation, Spectral Regrowth, Mobile RF Communications, Multiple Access techniques Wireless standards; Receiver Architectures: Basic Heterodyne Receivers, Modern Heterodyne Receivers, Direct-Conversion Receivers, Image Reject Receivers, Low-IF Receivers; Transmitter Architectures: Direct-Conversion Transmitters, Modern Direct-Conversion Transmitters, Heterodyne Transmitters.                                                   (8L)                                               

Module -4:

Basic blocks in RF systems and their VLSI implementation:

Low Noise Amplifier Design in various technologies, Design of Mixers at GHz frequency range; Various Mixers, their working and implementations; Oscillators: Basic topologies of VCO and definition of phase noise. Noise Power tradeoff. Resonatorless VCO design; Quadrature and single-sideband generators.                                                  (9L)                                               

Module -5:

Radio Frequency Synthesizer and Power Amplifiers:

Radio Frequency Synthesizes: Phase Detector, Various types of PLLs, Various RF synthesizer architectures and frequency dividers; Power Amplifiers: Classification of Power Amplifiers, High-Efficiency Power Amplifiers, Linearization techniques, Design issues in integrated RF filters.                                                                                (9L)

Text Books:  

1. John W. M. Rogers, Calvin Plett, Radio Frequency Integrated Circuit Design, Artech House, 2010.

2. Behzad Razavi, RF Microelectronics, 1e, Prentice Hall, 1998.

3. Behzad Razavi, RF Microelectronics, 2e, Prentice Hall, 2011. 

Reference Book:

1. Samuel Y. Liao, Microwave Devices and Circuits, 3e, Prentice-Hall of India, 2003.

2. Paul R. Gray, Paul J. Hurst, Stephen H. Lewis and Roberst G. Meyer, Analysis and Design of Analog Integrated Circuits, 5/e, Wiley, 2009.

3. The Design of CMOS Radio-Frequency Integrated Circuits by Thomas H. Lee. Cambridge University Press, 2004.