press

Shared Achievements

1. Semiconductor Engineering highlighted our IEDM publication “First Comparative Thermal Evaluation of 2D Semiconductor vs. Silicon Nanosheet Transistors”, along with IEDM papers from TSMC, IMEC, Samsung Electronics, and Purdue University (2026) [Link] 

2. Our IEDM publication “First Comparative Thermal Evaluation of 2D Semiconductor vs. Silicon Nanosheet Transistors” was highlighted in the SUPREME Newsletter (March 2026). SUPREME (Superior Energy-efficient Materials and Devices) is a microelectronics research center in the JUMP 2.0 program funded by SRC (Semiconductor Research Corporation) in the U.S. (2026) [Link] 

3. Our IEDM publication “Thermal Evaluation and Comparison of CAA and GAA Indium Tin Oxide Vertical Channel Transistors” was also featured in the SUPREME Newsletter highlighting recent advances in semiconductor device research (2026) [Link] 

4. The Stanford Electrical Engineering department featured four Electrical Engineering students in the 2025 Knight-Hennessy Scholars cohort, reflecting our achievement (2025) [Link] 

5. Knight-Hennessy Scholars announced the 2025 cohort of 84 scholars from 25 countries and 46 graduate programs, marking a collective step forward in our academic journeys [Link1] [Link2] 

6. The Stanford Electrical Engineering department highlighted our recent ACS Nano publication (2025) [Link]