HIGHLIGHTS

Selected Publications

1. Young Suh Song, Haotian Su, Tara Peña, Anton E. O. Persson, Kyungwhan Yang, Eilam Yalon, Robert K.A. Bennett, Zherui Han, Kathryn Neilson, Jimin Kang, Jerry A. Yang, H.-S. Philip Wong, Shan X. Wang, Eric Pop, "First Comparative Thermal Evaluation of 2D Semiconductor vs. Silicon Nanosheet Transistors," IEEE International Electron Devices Meeting (IEEE IEDM), Dec 2025, San Francisco, CA, USA [Link] 

• This study is the “world’s first” to quantify the thermal differences between 2D and Si gate-all-around (GAA) nanosheet transistors.

• By combining wrap-around contact (WAC) with metal-intercalated 2D material source/drain contacts, we dramatically reduce the thermal resistance disparity between 2D and Si GAA nanosheets from ~1100% to ~50%. As a result, this work presents an approach to substantially reduce the thermal disadvantage of 2D material while preserving electrical benefits of 2D material, thereby enabling further scaling (Lgate = 6-12 nm).

• IEDM is a conference where many highly influential papers on MOSFET, Dennard Scaling, FinFET, High-k/Metal Gate (HKMG), and GAA MOSFET have been published. Many of these works represent first demonstrations of key device technologies.

• This work was conducted in collaboration with industry (Logic TD, Samsung Electronics), providing an industry perspective as well.

2. Young Suh Song†, Jimin Kang†, Hyeonho Gu†, Haotian Su, Yuan-Mau Lee, Shan X. Wang, Jimin Kwon, H.-S. Philip Wong, Eric Pop, "Thermal Evaluation and Comparison of CAA and GAA Indium Tin Oxide Vertical Channel Transistors," IEEE International Electron Devices Meeting (IEEE IEDM), Dec 2025, San Francisco CA, USA [Link]
   
   

3. Young Suh Song, Haotian Su, Yuan-Mau Lee, Zherui Han, Robert K. A. Bennett, Maritha A. Wang, Luke Gyubin Min, Mehdi Asheghi, Kenneth E. Goodson, Shan X. Wang, and Eric Pop, "Investigation and Reduction of Thermal Resistance in Gate-All-Around Indium Tin Oxide Nanosheet Field-Effect Transistors," IEEE Device Research Conference (DRC), June 2025, Durham, NC, USA [Link]

• The transistor was first presented by William Shockley at CEDR (Cornell Univ., 1948), a predecessor of IEEE DRC. IEEE DRC was established in 1969 by merging CEDR and SSDRC.
  
  

4. [Editor-in-Chief] Young Suh Song, Laxman Raju Thoutam, Shubham Tayal, Shiromani Balmukund Rahi, T. S. Arun Samuel, "Handbook of Emerging Materials for Semiconductor Industry," Springer, June 2024. [Link]
   
   

5. Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Sandip Bhattacharya, J. Ajayan, Biswajit Jena, Ilho Myeong, Byung-Gook Park, and Young Suh Song*, "Incorporating Bottom-Up Approach Into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications," IEEE Transactions on Electron Devices (IEEE TED), vol. 69, no. 11, pp. 6127-6132, Nov. 2022, USA [SCI] [Link]
   
   

6. Young Suh Song, Sangwan Kim, Jang Hyun Kim, Garam Kim, Jong-Ho Lee, and Woo Young Choi, "Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-κ Spacer Structure," IEEE Transactions on Electron Devices (IEEE TED), vol. 70, no. 1, pp. 343-348, Jan. 2023, USA [SCI] [Link]