HIGHLIGHTS

Selected Publications

(accepted) Young Suh Song, Haotian Su, Tara Peña, Anton E. O. Persson, Kyungwhan Yang, Eilam Yalon, Robert K.A. Bennett, Zherui Han, Kathryn Neilson, Jimin Kang, Jerry A. Yang, H.-S. Philip Wong, Shan X. Wang, Eric Pop, "First Comparative Thermal Evaluation of 2D Semiconductor vs. Silicon Nanosheet Transistors," IEEE International Electron Devices Meeting (IEEE IEDM), Dec 2025, San Francisco, CA, USA (accepted)

IEDM is a conference where many highly influential papers on MOSFET, Dennard Scaling, FinFET, High-k/Metal Gate (HKMG), and GAA MOSFET have been published. Many of these works represent first demonstrations of key device technologies.

(accepted) Young Suh Song†, Jimin Kang†, Hyeonho Gu†, Haotian Su, Yuan-Mau Lee, Shan X. Wang, Jimin Kwon, H.-S. Philip Wong, Eric Pop, "Thermal Evaluation and Comparison of CAA and GAA Indium Tin Oxide Vertical Channel Transistors," IEEE International Electron Devices Meeting (IEEE IEDM), Dec 2025, San Francisco CA, USA (accepted)
Young Suh Song, Haotian Su, Yuan-Mau Lee, Zherui Han, Robert K. A. Bennett, Maritha A. Wang, Luke Gyubin Min, Mehdi Asheghi, Kenneth E. Goodson, Shan X. Wang, and Eric Pop, "Investigation and Reduction of Thermal Resistance in Gate-All-Around Indium Tin Oxide Nanosheet Field-Effect Transistors," IEEE Device Research Conference (DRC), June 2025, Durham, NC, USA [Link]

The transistor was first presented by William Shockley at CEDR (Cornell Univ., 1948), a predecessor of IEEE DRC. IEEE DRC was established in 1969 by merging CEDR and SSDRC.

[Editor-in-Chief] Young Suh Song, Laxman Raju Thoutam, Shubham Tayal, Shiromani Balmukund Rahi, T. S. Arun Samuel, "Handbook of Emerging Materials for Semiconductor Industry," Springer, June 2024. [Link]
Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Sandip Bhattacharya, J. Ajayan, Biswajit Jena, Ilho Myeong, Byung-Gook Park, and Young Suh Song*, "Incorporating Bottom-Up Approach Into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications," IEEE Transactions on Electron Devices (IEEE TED), vol. 69, no. 11, pp. 6127-6132, Nov. 2022, USA [SCI] [Link]
Young Suh Song, Sangwan Kim, Jang Hyun Kim, Garam Kim, Jong-Ho Lee, and Woo Young Choi, "Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-κ Spacer Structure," IEEE Transactions on Electron Devices (IEEE TED), vol. 70, no. 1, pp. 343-348, Jan. 2023, USA [SCI] [Link]

Acknowledgements

Looking back on my life, I realize there have been more challenges along the way than I initially expected, and sometimes I’m amazed at how I managed to overcome them. Usually, I just brush this feeling off, thinking I was “just lucky,” but in truth, my ability to overcome challenges was made possible by the invaluable relationships I developed with the people around me.

During my undergraduate and master's studies at Seoul National University, my lab colleagues and professors made it possible for me to complete these programs successfully. When my research wasn’t going well, my peers would join me for a walk outside the lab, and my supportive seniors and juniors, and postdocs and professors offered their guidance. All of them played a vital role in helping me move forward. Doing fun things, like playing basketball or going on annual hikes with lab members helped me forget my worries about classes and projects and regain my energy.

I would like to express my sincere gratitude to the many people who have supported me along the way, including those reading this now. Though I cannot list their names here due to concerns about privacy, I am deeply grateful to each and every one of them. I will strive to make significant contributions as a researcher in return for the dedication shown to me by those around me, and, like they, I will continue to strive to be a person who contributes to the success of others.

I view research as a collective endeavor grounded in collaboration, mutual respect, and trust. Every achievement I have made reflects the insights and efforts of many people, often in ways that may not be immediately visible. It has been my consistent practice to include as coauthors all those who have contributed - even in small or indirect ways - because I believe that fairness and integrity, sustained by mutual trust, are the foundation of meaningful scientific progress.

For my next-generation semiconductor research, I thank Dr. Fujio Masuoka (inventor of GAA MOSFET [IEDM 1988]), Dr. Chenming Hu (inventor of FinFET [IEDM 1999]), and Dr. Andras Kis (inventor of monolayer MoS2 FET [Nature Nanotechnology 2011]) for the intellectual inspiration their pioneering work has provided.

Google Sites

Report abuse