Presentations
Joel T. Asubar, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Shogo Maeda, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Suguru Terai, Masaaki Kuzuhara, and Akio Yamamoto
WOCSDICE-EXMATEC 2024, Crete, Greece, May 20, 2024
(Comparison of electrical properties of AlGaN/GaN MIS-HEMTs with ZrO2/Al2O3 multilayer nano-laminate insulators and conventional Al2O3 and ZrO2 AlGaN/GaN MIS-HEMTs)
Suguru Terai, Ali Baratov, Shogo Maeda, Masaki Ishiguro, Masaaki Kuzuhara, Joel T. Asubar
令和5年度応用物理学会 北陸・信越支部学術講演会,富山市、2023年12月2日
(2023 Japan Society of Applied Physics Hokuriku/Shin-Etsu Branch Academic Lecture), Toyama City, December 2, 2023
(Relationship between RTA temperature and electrical characteristics in GaN-based devices using Cu/Al/Mo/Au electrodes)
Kensei Sumida, Ali Baratov, Shogo Maeda, Terai Suguru, Masaaki Kuzuhara, Joel T. Asubar
令和5年度応用物理学会 北陸・信越支部学術講演会,富山市、2023年12月2日
(2023 Japan Society of Applied Physics Hokuriku/Shin-Etsu Branch Academic Lecture), Toyama City, December 2, 2023
MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices (INVITED)
Akio Yamamoto, Ali Baratov, Masaaki Kuzuhara, and Joel T. Asubar
2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 16, 2023
M. Ishiguro, K. Sekiyama, S. Urano, A. Baratov, J. T. Asubar and M. Kuzuhara
2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 16, 2023
T. Igarashi, S. Maeda, A. Baratov, J. T. Asubar and M. Kuzuhara
2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 16, 2023
Nur Syazwani B. A. T., S. Maeda, A. Baratov, J. T. Asubar and M. Kuzuhara
2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 16, 2023
T. Nezu, S. Maeda, A. Baratov, I. Nagase, K. Sekiyama, S. Terai, M. Kuzuhara, A. Yamamoto, and J. T. Asubar
14th international Conference on Nitride Semiconductors (ICNS 14), Fukuoka, Nov 15, 2023
K. Bito, H. Hiroshige, R. Hashimoto, M. Ishiguro, J. T. Asubar, Y. Nakamura, and Z. Yatabe
14th international Conference on Nitride Semiconductors (ICNS 14), Fukuoka, Nov 15, 2023
Baratov Ali, Igarashi Takahiro, Masaki Ishiguro, Shogo Maeda, Masaaki Kuzuhara, and Joel T. Asubar
2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023)
Baratov Ali, Igarashi Takahiro, Masaki Ishiguro, Shogo Maeda, Masaaki Kuzuhara, and Joel T. Asubar
2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023)
Joel T. Asubar, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Shogo Maeda, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Masaaki Kuzuhara, and Akio Yamamoto
WOCSDICE-EXMATEC 2023, Palermo (Italy), May 24, 2023
Joel T. Asubar
IEEE R10 Webinar Series – “IEEE R10Talk” April 22 2023
S Maeda, JT Asubar, I Nagase, S Urano, T Nezu, T Igarashi, A Baratov, A Yamamoto, M Kuzuhara
2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 28, 2022
BDD Lau, S Yamazaki, S Urano, A Baratov, JT Asubar, M Kuzuhara
2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 28, 2022
Zenji Yatabe, Yusui Nakamura, Joel T Asubar
2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 28, 2022
K Sakota, K Herbert, K Shibata, M Kuzuhara, K Kodama, JT Asubar
2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 28, 2022
K Sekiyama, M Ishiguro, S Yamazaki, S Urano, A Baratov, JT Asubar, M Kuzuhara
2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 28, 2022
A. Baratov, S. Kawabata, S. Urano, I. Nagase, M. Ishiguro, S. Maeda, T. Igarashi, T. Nezu, Z. Yatabe, M. Matys, T. Kachi, B. Adamowicz, A. Wakejima, M. Kuzuhara, A. Yamamoto and J. T. Asubar
14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022), Hiroshima, Japan, August 30, 2022
(invited)
D.-Y. Chen, B. Hult, F. Wach, M. Smith, J. Pomeroy, M. Uren, M. Kuball, J. Lu, M. Dahlqvist, K.-S. Wen, M. Lorenzini, J. Rosen, M. Thorsell, L. Hultman, E. Zanoni, J. T. Asubar, M. Kuzuhara, A. Pantellini, M. Natali, L. Latessa, C. Lanzieri, J. Grünenpütt, D. Sommer,
J. Splettstößer, H. Stieglauer, H. Blanck, O. Hilt, S. Shevchenko, O. Bengtsson, H.-J. Würfl, N. Rorsman J.-T. Chen
Presented at the GaN Marathon 2022 , Venice , Italy, June 21, 2022
Characterization of mist-Al2O3 gate insulator and its applications in mist-Al2O3/AlGaN/GaN MOS-HEMTs
Tomohiro Motoyama, Shun Urano, Ali Baratov, Yusui Nakamura, Masaaki Kuzuhara, Joel T. Asubar, and Zenji Yatabe
The 69th Japan Society of Applied Physics Spring Meeting 2022, Aoyama Gakuin University, March 24, 2022
Shun Urano, Joel T. Asubar, Rui Shan Low, Faris Muhammad, Masaki Ishiguro, Itsuki Nagase, Ali Baratov, Tomohiro Motoyama, Yusui Nakamura, Masaaki Kuzuhara, and Zenji Yatabe
The 69th Japan Society of Applied Physics Spring Meeting 2022, Aoyama Gakuin University, March 24, 2022
S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe and M. Kuzuhara
2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021), online, Nov 18, 2021
Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021), online, Nov 18, 2021
S. Maeda, I. Nagase, A. Baratov, S. Urano,J. T. Asubar, A. Yamamoto, M. Kuzuhara
2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021), online, Nov 18, 2021
M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021), online, Nov 18, 2021
Improved Interfaces of high-K ZrO2 and AlGaN via ex-situ MOVPE regrowth
Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
2020 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2020),online, Nov 27, 2020Effect of Post-Metallization Annealing on Properties of ZrO2/regrown-AlGaN/GaN structures
Shun Urano, Joel T. Asubar, Itsuki Nagase, Rui Shan Low, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
2020 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2020), online, Nov 27, 2020Characterization of mist-CVD deposited Al2O3 films on AlGaN/GaN heterostructures
Tomohiro Motoyama, Kenta Naito, Yusui Nakamura, Zenji Yatabe, Rui Shan Low, Itsuki Nagase, Ali Baratov, Hirokuni Tokuda, Masaaki Kuzuhara, Joel T. Asubar
2020 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2020), online, Nov 27, 2020Effect of recoil-implanted N atoms on defect formation in Mg-implanted GaN
K. C. Herbert, K. Shibata, J. T. Asubar, M. Kuzuhara
2020 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2020), online, Nov 27, 2020Improved performance in GaN-based HEMTs with insulated gate structures
Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
The Institute of Electronics,Information and Communication Engineers Electron Device (IEICE, ED meeting) , online, Nov 27, 2020GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura
The Institute of Electronics,Information and Communication Engineers Electron Device (IEICE, ED meeting) , online, Nov 27, 2020Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
The Institute of Electronics,Information and Communication Engineers Electron Device (IEICE, ED meeting) , online, Nov 26, 2020Normally-off Recessed-gate ZrO2/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier
Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
Solid State Devices and Materials 2020 (SSDM 2020), online, Sept 27, 2020AlGaN/GaN MIS-HEMTs using 4-nm-thick Al2O3 Dielectric Deposited by Mist Chemical Vapor Deposition
Rui Shan Low, Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, Zenji Yatabe, Kenta Naito, Kazuki Nishimura, Yusui Nakamura
The 67th Japan Society of Applied Physics Spring Meeting, Tokyo, Mar 14, 2020Study on gain improvement in AlGaN/GaN MOS HEMTs
Ali Baratov, Takashi Ozawa, Mohammad Nazrin, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda, Masato Nishimori, Yoichi Kawano, Masaaki Kuzuhara
The 67th Japan Society of Applied Physics Spring Meeting, Tokyo, Mar 14, 2020Al2O3 thin films deposited by mist-CVD for gate insulator application in GaN-based devices
Kenta Naito, Kazuki Nishimura, Zenji Yatabe, Joel T. Asubar, Yusui Nakamura
The 4th Asian Applied Physics Conference (Asian-APC) Kumamoto 11 Nov 2019 Nov 23, 2019Sub-Micron Gate Fabrication Process for AlGaN/GaN HEMTs
Ali Baratov, Takashi Ozawa, Joel T. Asubar, Hirokuni Tokuda, d Masaaki, Kuzuhara
2019 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 14, 2019Impact of SiN Capping during Ohmic Annealing on Performance of GaN-Based MISHEMTs (Best Paper)
Shan Low, Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, Masaaki, Kuzuhara
2019 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 14, 2019Study on Luminescence and Leakage Current of AlGaN/GaN HEMTs Biased near Off-State Breakdown
Shunsuke Kamiya, Takashi Nishitani, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2019 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 14, 2019Characterization of frequency in AlGaN/GaN MOS HEMTs
Takashi Ozawa, Joel Asubar, Hirokuni Tokuda, Yohei Yagishita, Yoichi Kawano, Masaaki Kuzuhara
The 80th Japan Society of Applied Physics Autumn Meeting 2022, Sapporo, Sep 18, 2019Threshold voltage control in normally-off Al2O3/AlGaN/GaN MOS-HEMTs through Al2O3 thickness variation
Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
The 80th Japan Society of Applied Physics Autumn Meeting 2022, Sapporo, Sep 18, 2019Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs (19a-E301-9)
Takashi Nishitani, Shunsuke Kamiya, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
The 80th Japan Society of Applied Physics Autumn Meeting 2022, Sapporo, Sep 18, 2019GaN-on-GaN HEMTs with High Breakdown Critical Fields
Atsuki Aoai, Akio Yamamoto, Hirokuni Tokuda, Narihito Okada, Kazuyuki Tadatomo, Joel Asubar, Masaaki Kuzuhara
The 80th Japan Society of Applied Physics Autumn Meeting 2022, Sapporo, Sep 18, 2019Recent progress in Normally-off GaN-based transistors (invited)
Joel T. Asubar, Shinsaku Kawabata, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
Recent Topics on GaN Semiconductor Devices (The Japan Society of Vacuum and Surface Science), Osaka, Jul 5, 2019 tedImpact of regrown AlGaN layer on the properties of Al2O3/AlGaN/GaN metal-insulator-semiconductor structures
Joel T. Asubar, Shinsaku Kawabata, Low Rui Shan, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019), Cabourg, France, Jun 17, 2019Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth
Shinsaku Kawabata, Joel T. Asubar, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
Compound Semiconductor Week 2019, Nara, May 21, 2019Relationship between High Frequency Power Characteristics and Current Collapse of AlGaN/GaN HEMTs
Takashi Ozawa, Joel Tacla Asubar, Hirokuni Tokuda, Yohei Yagishita, Yoichi Kawano, Masaaki Kuzuhara
Compound Semiconductor Week 2019, Nara, May 21, 2019Improved on-state breakdown characteristics in AlGaN/GaN MOS-HEMTs with a gate field plate
Takashi Nishitani, Ryota Yamaguchi, Joel Tacla Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
Compound Semiconductor Week 2019, Nara, May 21, 2019Study of breakdown field in Fe-doped Semi-insulating GaN substrates
A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
International Workshop on Nitride Semiconductors 2018 (IWN 2018) Nov 15, 2018Threshold voltage hysteresis in GaN-based vertical trench MOSFETs
S. Murata, M. Sasada, J. T. Asubar, H. Tokuda, M. Kuzuhara
IWN-2018,TuP-ED-6,Kanazawa (Japan) (2018.11) Nov 13, 2018Impact of air annealing on performance of AlGaN/GaN MISHEMTs with recessed gate structures
S. Kawabata, W. Gamachi, J. T. Asubar, H. Tokuda, M. Kuzuhara
IWN-2018,TuP-CR-23,Kanazawa (Japan) (2018.11) Nov 13, 2018Study on breakdown field in Fe-doped semi-insulating GaN substrates
A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, M. Kuzuhara
IWN-2018 Nov 13, 2018Threshold voltage hysteresis in GaN-based vertical Trench MOSFETs
S. Murata, M. Sasada, J. T. Asubar, H. Tokuda, M. Kuzuhara
International Workshop on Nitride Semiconductors 2018 (IWN 2018) Nov 13, 2018Impact of air annealing on performance of AlGaN/GaN MIS-HEMTs with recessed gate structures
S. Kawabata, W. Gamachi, J. T. Asubar, H. Tokuda, M. Kuzuhara
International Workshop on Nitride Semiconductors 2018 (IWN 2018) Nov 13, 2018Characterization of AlGaN/GaN MOS-HEMTs with gate field plate
T. Nishitani, R. Yamaguchi, J. T. Asubar, H. Tokuda, M. Kuzuhara
IWN-2018,MoP-ED-13 (2018.11) Nov 12, 2018Characterization of AlGaN/GaN MOSHEMTs with Gate Field Plate
T. Nishitani, R. Yamaguchi, J. T. Asubar, H. Tokuda
International Workshop on Nitride Semiconductors 2018 (IWN 2018) Nov 12, 2018Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs
Shoichi Murata, Masataka Sasada, Asubar Joel, Hirokuni Tokuda, Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting) Sep 18, 2018Characterization of AlGaN/GaN MOS-HEMTs with Gate Field Plate
Takashi Nishitani, Ryota Yamaguchi, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting) Sep 18, 2018Characterization of Breakdown Field in Fe-doped Semi-insulating GaN Substrates
Atsuki Aoai, Kosuke Suzuki, Joel Asubar, Hirokuni Tokuda, Narihito Okada, Kazuyuki Tadatomo, Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting) Sep 18, 2018Study on threshold voltage hysteresis in GaN-based vertical trench MOSFETs
S. Murata, M. Sasada, J. T. Asubar, H. Tokuda, K. Ueno, M. Edo, M. Kuzuhara
IEEE IMFEDK,Kyoto (Japan) (2018.06) Jun 22, 2018Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
A. Aoai, K. suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo
IEEE IMFEDK,Kyoto (Japan) (2018.06) Jun 22, 2018Reduced current collapse in AlGaN/GaN HEMTs with p-GaN layer at gate-drain region
T. Ozawa, J. T. Asubar, H. Tokuda, M. Kuzuhara
IEEE IMFEDK,Kyoto (Japan) (2018.06) Jun 22, 2018Improved current collapse in AlGaN/GaN MOS-HEMTs with dual field-plates
T. Nishitani, R. Yamaguchi, T. Yamazaki, J. T. Asubar, H. Tokuda, M. Kuzuhara
IEEE IMFEDK,Kyoto (Japan) (2018.06) Jun 22, 2018Effect of post-gate deposition annealing on the electrical characteristics of AlGaN/GaN HEMTs with p-GaN gate
S. Kawabata, J. T. Asubar, H. Tokuda, M. Kuzuhara
IEEE IMFEDK,Kyoto (Japan) (2018.06) Jun 22, 2018Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates
Takashi Nishitani, Ryota Yamaguchi, Taisei Yamazaki, Joel Tacla Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Jun 21, 2018Study on Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs
Shoichi Murata, Masataka Sasada, Joel Asubar, Hirokuni Tokuda, Katsunori Ueno, Masaharu Edo, Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Jun 21, 2018Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
Atsuki Aoai, Kousuke Suzuki, Joel Tacla Asubar, Hirokuni Tokuda, Kohei Nojima, Naoto Ishibashi, Narihito Okada, Kazuyuki Tadatomo, Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Jun 21, 2018Reduced Current Collapse in AlGaN/GaN HEMTs with p-GaN layer at the gate-drain access region
Takashi Ozawa, Asubar Joel Tacla, Hirokuni Tokuda, Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Jun 21, 2018Effect of Post-gate Deposition Annealing on the Electrical Characteristics of AlGaN/GaN HEMTs with p-GaN Gate
Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Jun 21, 2018Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
Kosuke Suzuki, Atsuki Aoai, Joel T. Asubar, Hirokuni Tokuda, Kohei Nojima, Naoto Ishibashi, Narihito Okada, Kazuyuku Tadatomo, Masaaki Kuzuhara
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2018) May 14, 2018 WOCSDICEAlGaN/GaN MOS-HEMTs with dual field plates for stable high-performance operation
R. Yamaguchi, T. Yamazaki, T. Nishitani, J. T. Asubar, H. Tokuda, M. Kuzuhara
CS MANTECH,14.14,Austin(USA),Digest of CS-MANTECH 2018 (2018.05) May 10, 2018 CS MANTECHThreshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress
Masataka Sasada, Norihumi Takashima, Shoichi Murata, Joel Asubar, Hirokuni Tokuda, Katsunori Ueno, Masaharu Edo, Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting) Mar 17, 2018Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric
Wataru Gamachi, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting) Mar 17, 2018Characterization of AlGaN/GaN MOS-HEMTs with Dual Field Plates
Ryota Yamaguchi, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting) Mar 17, 2018Theoretical study on Improved Current Collapse in AlGaN/GaN HEMT with Field Plate Structure
Kazuki Kodama, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting) Mar 17, 2018A method for deriving interface state density from sub-threshold swing in AlGaN/GaN MIS-HEMTs
H. Tokuda, J. T. Asubar, M. Kuzuhara
IS-Plasma 2018, Nagoya (Japan) (2018.03) Mar 7, 2018A method for deriving interface state density from sub-threshold swing in AlGaN/GaN HEMTs
H. Tokuda, J. T. Asubar, M. Kuzuhara
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2018) Mar 4, 2018Contact resistivity of vertical trench GaN-MOSFET with Si-implanted source region
Norifumi Takashima, Masataka Sasada, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2017-nendo Shuuki Dai-78-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 78th Autumn Meeting) Sep 5, 2017Reduced Current Collapse in Multi-Fingered AlGaN/GaN MOS-HEMTs with Dual Field Plate
Ryota Yamaguchi, Yudai Suzuki, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Jun 29, 2017Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, M. Kuzuhara
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Jun 29, 2017Investigation of Dynamic On-Resistance of Multi-Mesa-Channel AlGaN/GaN HEMTs
Joel T. Asubar, Hirokuni Tokuda, Tamotsu Hashizume, Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Jun 18, 2017Effect of Substrate Thermal Resistivity on Breakdown Voltage of AlGaN/GaN HEMTs
Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Jun 18, 2017Study on High Frequency Loss in Coplanar Waveguides Fabricated on Si Substrate
Kosuke Suzuki, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Jun 18, 2017Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, M. Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Jun 18, 2017Effective Suppression of Current Collapse in AlGaN/GaN HEMTs (invited)
J. T. Asubar, H. Tokuda, M. Kuzuhara
35th Samahang Pisika ng Pilipinas Physics Conference (SPP 2017) Jun 7, 2017Effect of groove spacing on DC characteristics in3DFP AlGaN/GaN HEMTs
A. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2017-nendo Shunki Dai-64-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 64th Spring Meeting) Mar 14, 2017High Breakdown Voltage AlGaN/GaN HEMTs Fabricated on Semiinsulating GaN Substrates
Masaaki Kuzuhara, Joel T. Asubar, Hirokuni Tokuda
"Workshop on Frontier Photonic and Electronic Materials and Devices" Mar 5, 2017Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined Application of Oxygen Plasma Treatment and Field-plate Structures
J. T. Asubar, S. Yoshida, H. Tokuda, M. Kuzuhara
2015 International Conference on Solid State Devices and Materials (SSDM 2015) Sep 27, 2016Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures
Z. Yatabe, J. T. Asubar, Y. Nakamura, T. Hashizume
2016 International Conference on Solid State Devices and Materials (SSDM 2016) Sep 26, 2016Effect of passivation on breakdown and dynamic on-resistance in AlGaN/GaN HEMTs
Masaaki Kuzuhara, Joel. T. Asubar, Hirokuni Tokuda
European Material Research Society (E-MRS 2016), Fall Meeting Sep 19, 2016Effect of drain electrode shape on breakdown voltage in AlGaN/GaN HEMTs
T. Yamazaki, Y. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting) Sep 13, 2016Effect of groove depth on current collapse in 3DFP AlGaN/GaN HEMTs
A. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting) Sep 13, 2016AlGaN/GaN HEMTs on Free-standing GaN Substrates with Critical Electric Field of 1.2 MV/cm
J. H. Ng, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting) Sep 13, 2016Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors (invited)
Z. Yatabe, Y. Hori, W.C. Ma, J. T. Asubar, M. Akazawa, T. Sato, T. Hashizume
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting) Sep 13, 2016Effect of Metal Electrode Process on Breakdown Voltages in AlGaN/GaN HEMTs
S. Makino, S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting) Sep 13, 2016Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs (invited)
J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, T. Hashizume
34th Samahang Pisika ng Pilipinas Physics Conference (SPP 2016) Aug 18, 2016High on/off ratio AlGaN/GaN MIS-HEMTs with ALD deposited Al2O3 gate dielectric using ozone as an oxidant
H. Tokuda, J. T. Asubar, M. Kuzuhara
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016) Jul 4, 2016Impact of Drain Electrode Shape Irregularities on Breakdown Voltage of AlGaN/GaN HEMTs
S. Ohi, S. Makino, T. Yamazaki, H. Tokuda, J. T. Asubar, M. Kuzuhara
2016 Compound Semiconductor Week (CSW 2016) Jun 26, 2016Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs
S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Jun 23, 2016Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns
T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Jun 23, 2016Effect of Metal Electrode Shape Irregularities on AlGaN/GaN HEMTs Breakdown Voltage Revealed by Electroluminescence
S. Makino, T. Yamazaki, S. Ohi, H. Tokuda, J. T. Asubar, M. Kuzuhara
40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 2016 Jun 6, 2016AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm
J. H. Ng, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech 2016) May 16, 2016Correlation between Off-Breakdown and EL Emission in AlGaN/GaN HEMTs
S. Yoshida, S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shunki Dai-63-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 63rd Spring Meeting) Mar 19, 2016Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
A. Sasakura, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting) Sep 13, 2015High Breakdown Voltage AlGaN/GaN HEMTs on Free-Standing GaN Substrate
J. H. Ng, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting) Sep 13, 2015Improved Current Collapse by O2 plasma treatment in AlGaN/GaN HEMTs with GaN cap layer
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting) Sep 13, 2015Structural analysis of MBE-grown ZnSnAs2 thin film by X-ray fluorescence holography
S. Hayashi, K. Hayashi, J. T. Asubar, N. Happo, S. Hosokawa, N. Uchitomi
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting) Sep 13, 2015Comparative Study of oxygen plasma treatment and GaN cap layer effects on the current collapse of AlGaN/GaN HEMTs
J. T. Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda, T. Hashizume, M. Kuzuhara
11th Topical Workshop on Heterostructures Microelectronics (TWHM 2015) Aug 23, 2015Electrical characterization of stepped AlGaN/GaN heterostructures
S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, M. Kuzuhara
39th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2015) Jun 7, 2015High Drain Current and Low On-Resistance in AlGaN/GaN HEMTs with Au-Plated Ohmic Electrodes
Y. Suzuki, K. Tone, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Jun 4, 2015Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Jun 4, 2015Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
A. Sasakura, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Jun 4, 2015Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Jun 4, 2015Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015) May 18, 2015Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita, Y. Uraoka, M. Kuzuhara
2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015) May 18, 2015Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting) Mar 12, 2015Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting) Mar 11, 2015Suppressed Current Collapse in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting) Mar 11, 2015Electrical properties of AlGaN/GaN heterostructures grown on a step-etched substrates
S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting) Mar 11, 2015Status and Prospects for GaN-based Power Transistors (invited)
M. Kuzuhara, J. T. Asubar, H. Tokuda
1st Lecture meeting of Advanced Power Semiconductor Subcommittee (Senshin pawaa handoutai bunka-kai dai-1 kai in Japanese) Nov 19, 2014Applications of Al2O3/InAlN interface formed by 2-step ALD to MOSHEMT
Y. Odanagi, M. Akazawa, J. T. Asubar, Z. Yatabe, T. Hashizume
2014-nendo Shuuki Dai-75-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 75th Autumn Meeting) Sep 17, 2014Reduced Thermal Resistance in AlGaN/GaN Multi-Mesa-Channel High Electron Mobility Transistors
J.T. Asubar, K. Nishiguchi, T. Hashizume
International Workshop on Nitride Semiconductors 2014 Aug 24, 2014Spatial Discrimination of Surface Charging Region in AlGaN/GaN HEMTs Investigated Using Dual-Gate Architecture
K. Nishiguchi, J.T. Asubar, T. Hashizume
International Workshop on Nitride Semiconductors 2014 Aug 24, 2014Current Collapse Characterization of AlGaN/GaN HEMT using a Dual-gate Structure
K. Nishiguchi, J. T. Asubar, T. Hashizume
2013-nendo Shuuki Dai-74-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 74th Autumn Meeting) Sep 16, 2013Investigation of AlGaN/GaN HEMT Off-state Stress Current Collapse
K. Nishiguchi, J. T. Asubar, T. Hashizume
Dai-49-kai Ouyou Butsuri Gakkai Hokkaido Shibu (Japan Society of Applied Physics Hokkaido Chapter 49th Meeting), Sep 9, 2013Current Stability Characterization of AlGaN/GaN HEMTs Using Dual-Gate Structure
J.T. Asubar, K. Nishiguchi, T. Hashizume
10th Topical Workshop on Heterostructure Microelectronics Sep 2, 2013Improved Current Stability in Multi-Mesa-Channel AlGaN/GaN Transistors
J.T. Asubar, K. Ohi, k. Nishiguchi, T. Hashizume
10th International Conference on Nitride Semiconductors Aug 25, 2013Current Stability in AlGaN/GaN HEMTs
J.T. Asubar, K. Ohi, T. Hashizume
40th International Symposium on Compound Semiconductors May 19, 2013GaN Transistors for Next-generation Power Conversion System
J.T. Asubar, T. Hashizume
1st International Symposium on Technology and Sustainability Jan 26, 2012 InvitedInvestigation of the Off-state Bias-induced Current Collapse in AlGaN/GaN HEMTs
J. T. Asubar, M. Tajima, T. Hashizume
2011-nendo Shuuki Dai-72-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 72th Autumn Meeting) Aug 29, 2011Characterization of Off-State-Induced Current Collapse in AlGaN/GaN HEMTs Using Dual-Gate Architecture
J.T. Asubar, Masafumi Tajima, Tamotsu Hashizume
9th International Conference on Nitride Semiconductor Jul 10, 2011The Role of Gate-Source Region on the Off-state bias Induced Current Collapse of AlGaN/GaN HEMTs
J.T. Asubar, Masafumi Tajima, Tamotsu Hashizume
the 5th Asia-Pacific Workshop on Widegap Semiconductors May 22, 2011Direct Evidence of the Gate-Source Significant Role on the Bias-induced Current Collapse in AlGaN/GaN HEMTs
J. T. Asubar, M. Tajima, T. Hashizume
2011-nendo Shunki Dai-58-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 58th Spring Meeting) Mar 24, 2011Room-temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-based Spintronic Devices
N. Uchitomi, J.T. Asubar, H. Oomae, H. Endo, Y. Jinbo
the17th International Conference on Ternary and Multinary Compounds Sep 27, 2010Growth of Pseudomorphic ZnSnAs2 Thin Films on InP substrates
H. Endo, J. T. Asubar, Y. Agatsuma, T. Ishibashi, S. Nakamura, Y. Jinbo, N. Uchitomi
2010-nen (Heisei 22-Nen) Shunki Dai-57-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 57th Spring Meeting) Mar 17, 2010Mn-doped ZnSnAs2 Thin Films Properties Dependence on Mn content
H. Oomae, J. T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, N. Uchitomi
2010-nen (Heisei 22-Nen) Shunki Dai-57-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 57th Spring Meeting) Mar 17, 2010MBE growth, Magnetic Properties and Surface Morphology of MnAs Thin Films on GaAs(111) Substrates
K. Oomori, J.T. Asubar, Y. Jinbo, T. Ishibashi, N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering Mar 13, 2010Evidences of Pseudomorphic Growth of ZnSnAs2 Epitaxial Layers on Nearly Lattice Matched InP substrates
H. Endo, J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering Mar 13, 2010Magneto-optical Properties of MBE-grown MnAs0.4Sb0.6 Thin Films on GaAs(111) Substrates
T. Ishibashi, K. Oomori, M. Naganuma, S. Katoda, J.T. Asubar, Y. Jinbo, N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering Mar 13, 2010Annealing Effects on the Impurity Band Conduction of ZnSnAs2 Epitaxial Films
J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering Mar 13, 2010Dependence of MBE-grown ZnSnAs2:Mn epitaxial films properties on Mn-doping level
H. Oomae, J.T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering Mar 12, 2010Low-temperature Annealing Effect on the Properties of ZnSnAs2 Thin Films grown InP substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, N. Uchitomi
2009-nen (Heisei 21-Nen) Shuuki Dai-70-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 70th Autumn Meeting) Sep 8, 200914. Effect of thermal annealing on the properties of narrow-bandgap ZnSnAs2 epitaxial films on InP(001) substrates
Y. Agatsuma, J.T. Asubar, Y. Jinbo, N. Uchitomi
14th International Conference on Narrow Gap Semiconductors and Systems Jul 13, 2009High Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP substrates
J.T. Asubar, Y. Agatsuma, H. Yamaguchi, S. Nakamura, Y. Jinbo, N. Uchitomi
14th International Conference on Narrow Gap Semiconductors and Systems Jul 13, 2009Growth and Properties of MnAs Thin films on SiO2
K. Oomori, J. T. Asubar, Y. Jinbo, N. Uchitomi
28th Electronics Materials Symposium (EMS-28) Jul 8, 2009Fabrication and Structural Characterization of Nearly Lattice-matched p-ZnSnAs2/n-InP Heterojunctions
J.T. Asubar, S. Nakamura, Y. Jinbo, N. Uchitomi
IEEE Photonics Society, Indium Phosphide and Related Materials 2009 (IPRM2009) May 10, 2009Growth and Annealing Effects of GeMn Thin Films on GaAs Substrates
R. Tsuchida, J. T. Asubar, N. Uchitomi, Y. Jinbo
Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-13) Jan 27, 2009Ferromagnetic Mn-doped ZnSnAs2 Thin Films Lattice-matched with InP
J. T. Asubar, Y. Jinbo, N. Uchitomi
Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-13) Jan 27, 2009High-Resolution X-ray Diffraction Studies of Molecular Beam Epitaxy-Grown ZnSnAs2 Epitaxial Films on InP(001) Substrates
J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 20- Nendo Dai-37-kai Nihon Butsuri Gakkai Niigata Shibu (37th meeting of the Physical Society of Japan-Niigata Chapter 2008) Dec 21, 2008MBE Growth and Characterization of Mn-doped Chalcopyrite ZnSnAs2 Thin Films on Si Substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2008 (Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2008) Nov 14, 2008Evidence of Impurity Band Conduction In ZnSnAs2 Epitaxial Films
J. T. Asubar, Y. Jinbo, N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2008 (Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2008) Nov 14, 2008Room-temperature Ferromagnetism in Mn-doped ZnSnAs2 Thin Films grown on InP substrates
N. Uchitomi, J.T. Asubar, Y. Jinbo
IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC2008 ) Oct 20, 2008MBE Growth of Mn-doped Zn-Sn-As on Si(001) Substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter)) Oct 8, 2008Structural and Magnetic Properties of MnAs Thin Films Grown on Si Substrates
K. Ohmori, J. T. Asubar, R. Tsuchida, Y. Jinbo, N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter)) Oct 8, 2008Mn-doped Ge Thin Film Growth and Its Electrical and Magnetic Properties
R. Tsuchida, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter)) Oct 8, 2008Growth, Structure and Carrier Transport Properties of ZnSnAs2 Epitaxial Films
J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter)) Oct 8, 2008MBE Growth and Properties of GeMn Thin Films on GaAs(001)
R. Tsuchida, J. T. Asubar, N. Uchitomi, Y. Jinbo
Denki, Joho, Tsushin Gakkai Shin’ Etsu Shibu Taikai IEEE Shin’Etsu Shibu Session (2008 Meeting of the Shin-Etsu Chapter of The Institute of Electronics, Information and Communication Engineers, The IEEE Shin-Etsu Session) Sep 27, 2008Impurity Band Conduction and Negative Magnetoresistance in p-ZnSnAs2
J.T. Asubar, Y. Jinbo, N. Uchitomi
16th International Conference on Ternary and Multinary Compounds (ICTMC-16) Sep 15, 2008Carrier Transport Mechanism in ZnSnAs2 thin films
J. T. Asubar, Y. Jinbo, N. Uchitomi
2008-nen (Heisei 20-Nen) Shuuki Dai-69-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 68th Autumn Meeting) Sep 2, 2008Growth, Structural and Transport Properties of ZnSnAs2 Thin Films on InP(001) Substrates
J. T. Asubar, S. Nakamura, Y. Jinbo, N. Uchitomi
27th Electronics Materials Symposium (EMS-27) Jul 9, 2008MBE Growth and Properties of GeMn thin films on (001) GaAs
R. Tsuchida, J.T. Asubar, Y. Jinbo, N. Uchitomi
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4) May 21, 2008Low-temperature Annealing Effects on (Ga,Mn)As/Zn-GaAsSuperlattice Structure Grown on GaAs(001) substrates H. Nakagawa, J.T. Asubar, Y. Jinbo, and N. Uchitomi
H. Nakagawa, J.T. Asubar, Y. Jinbo, N. Uchitomi
4thAsian Conference on Crystal Growth and Crystal Technology (CGCT-4) May 21, 2008MBE Growth of Mn-doped ZnSnAs2 thin-films
J.T. Asubar, Y. Jinbo, N. Uchitomi
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4) May 21, 2008Low-temperature Thermal Annealing and MBE Growth of Ferromagnetic Semiconductor (Ga,Mn)As/p-GaAs Superlattice Structures
H. Nakagawa, J. T. Asubar, Y. Jinbo, N. Uchitomi
2007-Nendo (Heisei19-Nendo) Ouyou Butsuri Gakkai Hokuriku-Shin Etsu Shibu Gakujutsu Kouenkai (Japan Society of Applied Physics Hokuriku-Shin Etsu chapter 2007 Meeting) Dec 30, 2007Characterization of ZnSnAs2 Thin films Grown by MBE
T. Yokoyama, J. T. Asubar, S. Nakamura, Y. Jinbo, N. Uchitomi
Heisei 19- Nendo Dai-36-kai Nihon Butsuri Gakkai Niigata Shibu (36th meeting of the Physical Society of Japan-Niigata Chapter 2007) Dec 8, 2007Fabrication and Low-temperature Thermal Annealing of Ferromagnetic Semiconductor (Ga,Mn)As/Zn-doped-GaAsSuperlattice Structures
H. Nakagawa, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 19- Nendo Dai-36-kai Nihon Butsuri Gakkai Niigata Shibu (36th meeting of the Physical Society of Japan-Niigata Chapter 2007) Dec 8, 2007Growth and Properties of Mn-doped ZnSnAs2 Epitaxial Films
J. T. Asubar, T. Yokoyama, S. Nakamura, Y. Jinbo, N. Uchitomi
2007-Nendo (Heisei19-Nendo) Ouyou Butsuri Gakkai Hokuriku-Shin Etsu Shibu Gakujutsu Kouenkai (Japan Society of Applied Physics Hokuriku-Shin Etsu chapter 2007 Meeting) Nov 30, 2007MBE Growth and Properties of N-type GeMn/GaAs
R. Tsuchida, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 19-Nendo Dai-17-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (17th (2007) Electrical Engineering Conference (Niigata chapter)) Nov 23, 2007MBE Growth and Annealing of (Ga,Mn)As/Zn-doped-GaAs Superlattice Structures
H. Nakagawa, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 19-Nendo Dai-17-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (17th (2007) Electrical Engineering Conference (Niigata chapter)) Nov 23, 2007Characterization of ZnSnAs2 Thin Films Epitaxially Grown on N-type (001) InP Substrates
T. Yokoyama, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 19-Nendo Dai-17-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (17th (2007) Electrical Engineering Conference (Niigata chapter)) Nov 23, 2007Interpretation of the Temperature Dependence of the Transport Properties of ZnSnAs2 Epitaxial Films Grown by MBE
J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 19-Nendo Dai-17-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (17th (2007) Electrical Engineering Conference (Niigata chapter)) Nov 23, 2007MBE Growth and Low-temperature Thermal Annealing of Ferromagnetic Semiconductor (Ga,Mn)As/Zn-doped-GaAs Superlattice Structures
H. Nakagawa, J. T. Asubar, Y. Jinbo, N. Uchitomi
2007-Nendo (Heisei 19-Nendo) Denshi Jouhou Tsuushin Gakkai Denshi Buhin Zairyou Kenkyuukai (2007 Institute of Electronics, Information and Communication Engineers (IEICE) Component Parts and Materials (CPM)) Nov 16, 2007Electrical Properties of ZnSnAs2 Thin Films Grown by MBE
J. T. Asubar, T. Yokoyama, Y. Jinbo, N. Uchitomi
2007-Nendo (Heisei 19-Nendo) Denshi JouhouTsuushinGakkai Denshi Buhin Zairyou Kenkyuukai (2007 Institute of Electronics, Information and Communication Engineers (IEICE) Component Parts and Materials (CPM)) Nov 16, 2007Growth and Characterization of ZnSnAs2 Epitaxial Films on N-type and Semi-insulating (001) InP Substrates
J. T. Asubar, T. Yokoyama, S. Nakamura, Y. Jinbo, N. Uchitomi
26th Electronics Materials Symposium (EMS-26) Jul 4, 2007Epitaxial Growth of ZnSnAs2 Thin Films on N-type InP(001) Substrates
T. Yokoyama, J.T. Asubar, M. Yamazaki, Y. Jinbo, N. Uchitomi
Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-Nano 2007) Jun 19, 2007MBE Growth and Low-temperature Thermal Annealing of (Ga,Mn)As/Zn-doped-GaAsSuperlattices
H. Nakagawa, J.T. Asubar, Y. Jinbo, N. Uchitomi
Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-Nano 2007) Jun 19, 2007Electrotransport Properties of P-type ZnSnAs2 Thin Films Grown by MBE on Semi-Insulating InP Substrates
J.T. Asubar, Y. Jinbo, N. Uchitomi
Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-Nano 2007) Jun 19, 2007Annealing effects on Zn-doped (Ga,Mn)As Ferromagnetic Semiconductor Thin Films
H. Nakagawa, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei18-Nendo Ouyou Butsuri Gakkai Hokuriku-Shin Etsu Shibu Gakujutsu Kouenkai (Japan Society of Applied Physics Hokuriku-Shin Etsu chapter 2006 Meeting) Nov 25, 2006MBE Growth and Structural Investigation of Mn-doped ZnSnAs2 Epitaxial Films
J. T. Asubar, A. Kato, S. Nakamura, Y. Jinbo, N. Uchitomi
2006-Nendo (Heisei18-Nendo) Ouyou Butsuri Gakkai Hokuriku-Shin Etsu Shibu Gakujutsu Kouenkai (Japan Society of Applied Physics Hokuriku-Shin Etsu chapter 2006 Meeting) Nov 25, 2006Structural Investigation of Mn-doped ZnSnAs2 Thin films Grown by MBE on InP (001) Substrates
J. T. Asubar, A. Kato, S. Nakamura, Y. Jinbo, N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2006 (The Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2006) Nov 18, 2006Low temperature Thermal Annealing Effect on the Properties of Zn-doped Ferromagnetic Semiconductor (Ga,Mn)As
H. Nakagawa, J. T. Asubar, Y. Jinbo, N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2006 (The Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2006) Nov 17, 2006Properties of ZnSnAs2 Thin Films Grown on InP(001) by MBE
T. Yokoyama, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 18-Nendo Dai-16-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (16th (2006) Electrical Engineering Conference (Niigata chapter)) Nov 16, 2006Low temperature Thermal Annealing Effect on the properties of Zn-doped ferromagnetic semiconductor (Ga,Mn)As Epitaxial Films
H. Nakagawa, J. T. Asubar, Y. Jinbo, N. Uchitomi
Heisei 18-Nen Shuuki Dai-67-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 67th Autumn Meeting) Aug 29, 2006Electrical and Magnetic Properties of Zn-doped GaMnAs grown by molecular beam epitaxy
J. T. Asubar, S. Sato, Y. Jinbo, N. Uchitomi
Heisei 18-Nen Shunki Dai-53-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 53rd Spring Meeting) Mar 22, 2006MBE Growth and Properties of GaMnAs with High Level of Zn Acceptor Incorporation
J.T. Asubar, S. Sato, Y. Jinbo, N. Uchitomi
15th International Conference on Ternary and Multinary Compounds (ICTMC-15) Mar 6, 2006MBE Growth of Mn-doped Zn-Sn-As compounds on (001) InP Substrates
J.T. Asubar, A. Kato, T. Kambayashi, S. Nakamura, Y. Jinbo, N. Uchitomi
14th International Conference on Molecular Beam Epitaxy (MBE-XIV) Mar 6, 2006Zn Incorporation and its Effect on the Properties of GaMnAs Ferromagnetic Semiconductors Grown by Molecular Beam Epitaxy
J. T. Asubar, S. Sato, Y. Jinbo, N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2005 (The Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2005) Nov 25, 2005Effect of Zn Incorporation on the Properties of GaMnAs diluted magnetic semiconductors
J. T. Asubar, S. Sato, Y. Jinbo, N. Uchitomi
Heisei 17-Nendo Dai-15-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (15th (2005) Electrical Engineering Conference (Niigata chapter)) Nov 11, 2005Magnetoresistance of (Ga,Mn)As films grown on Si(001) substrates
S. Sato, J.T. Asubar, Y. Jinbo, N. Uchitomi
International Conference on Nanoelectronics, Nanostructures and Carrier Interactions (NNCI-2005) Jan 31, 2005