Joel T. Asubar received his B.S. ECE degree (silver medalist) from Mapua Institute of Technology, and his M.S. and Ph.D. degrees from Nagaoka University of Technology, Niigata, Japan, working on semiconductor spintronics. He was a research trainee at Hitachi Central Research Laboratory in Kokubunji, Tokyo working with LD-MOSFETs. In 2010, he joined the Research Center for Integrated Quantum Electronics (RCIQE) of the Hokkaido University as a Post-doctoral fellow. In 2014 he joined University of Fukui, Japan as a Senior Assistant Professor, and was promoted to Associate Professor in 2019. He has been a committee member of IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK) since 2015. His research interests include growth of heterojunctions and device physics of GaN-based transistors. He is a 2016 Japanese Society of Applied Physics (JSAP) Outstanding Paper Awardee (www.jsap.or.jp/english/awards/jsap-outstanding-paper-award/recipients38). 

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Akio Yamamoto received his Ph.D. degrees from University of Fukui. He was a researcher at NTT Research Laboratory in Tokyo, Japan working with radiation resistant solar cells for space applications. He administered the epitaxially growth of first InN (indium nitride) with correct bandgap of 0.7 eV.

Ali Baratov is working on high-frequency applications of GaN-based MIS-HEMTs

Masaki Ishiguro is working on state-of-the-art recessed-gate structures for obtaining robust Enhancement mode operation from GaN-based MIS-HEMTs 

Shogo Maeda is working on MOCVD selective area growth geared for achieving high performance Normally-off AlGaN/GaN MIS-HEMTs

Toi Nezu is working on high-K insulator/AlGaN interfaces and its applications on GaN-based MIS-HEMTs

Takahiro Igarashi is working on low thermal budget ohmic contact for improving device performance and reliability of GaN-based MIS-HEMTs

Kishi Sekiyama is working on the effect of oxygen plasma treatment of AlGaN surfaces and its possibiliy of realizing  highly-safe GaN transistors.

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