Joel T. Asubar received his B.S. ECE degree (silver medalist) from Mapua Institute of Technology, and his M.S. and Ph.D. degrees from Nagaoka University of Technology, Niigata, Japan, working on semiconductor spintronics. He was a research trainee at Hitachi Central Research Laboratory in Kokubunji, Tokyo working with LD-MOSFETs. In 2010, he joined the Research Center for Integrated Quantum Electronics (RCIQE) of the Hokkaido University as a Post-doctoral fellow. In 2014 he joined University of Fukui, Japan as a Senior Assistant Professor, and was promoted to Associate Professor in 2019. He has been a committee member of IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK) since 2015. His research interests include growth of heterojunctions and device physics of GaN-based transistors. He is a 2016 Japanese Society of Applied Physics (JSAP) Outstanding Paper Awardee (www.jsap.or.jp/english/awards/jsap-outstanding-paper-award/recipients38). 

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Akio Yamamoto received his Ph.D. degrees from University of Fukui. He was a researcher at NTT Research Laboratory in Tokyo, Japan working with radiation resistant solar cells for space applications. He administered the epitaxially growth of first InN (indium nitride) with correct bandgap of 0.7 eV.

Naeemul is working on V-based ohmic contacts, AlN-MIS-HEMTs, and Enhancement mode GaN-based HEMTs.

Suguru Terai is working on nanolaminate gate insulators for  GaN-based  MIS-HEMTs

Reaz Tanvir Ahmed is working on Copper -based  Ohmic contacts for GaN-based HEMTs

Shundai Yamao is working on recessed-gate GaN- and AlN- based MIS-HEMTs 

Masahiro Uno is working on AlN/AlGaN/GaN MIS-HEMTs performance

Rei Kato is working on the effects of post-depostion thermal process on GaN-based MIS-HEMTs with Hi-K gate insulator

Kanta Mori is currently working with regrown AlGaN/AlN heterostructures and their application for Enhancement mode operation

Daito Matsubara is currently working with regrown AlN layers and its applications for realizing high performance GaN-MISHEMTS

Muhammad Arif Farhan Bin Abd Ghani is currently working with GaN-based MIS-HEMTs using low thermal budget V-based ohmic contacts for improved insulator/AlGaN interface