Invited Works
MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices (invited talk)
Akio Yamamoto, Ali Baratov, Masaaki Kuzuhara, and Joel T. Asubar
2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2019), Kyoto, Nov 16, 2023
Joel T. Asubar
IEEE R10 Webinar Series – “IEEE R10Talk” April 22 2023
Zenji Yatabe, Yusui Nakamura, Joel T. Asubar
2022 IEEE IMFEDK Tech. Dig. doi: 10.1109/IMFEDK56875.2022.9975434
(invited talk)
D.-Y. Chen, B. Hult, F. Wach, M. Smith, J. Pomeroy, M. Uren, M. Kuball, J. Lu, M. Dahlqvist, K.-S. Wen, M. Lorenzini, J. Rosen, M. Thorsell, L. Hultman, E. Zanoni, J. T. Asubar, M. Kuzuhara, A. Pantellini, M. Natali, L. Latessa, C. Lanzieri, J. Grünenpütt, D. Sommer, J. Splettstößer, H. Stieglauer, H. Blanck, O. Hilt, S. Shevchenko, O. Bengtsson, H.-J. Würfl, N. Rorsman J.-T. Chen
Presented at the GaN Marathon 2022 , Venice , Italy, June 21, 2022
Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier (invited talk)
J. T. Asubar, S. Kawabata, H. Tokuda, A. Yamamoto, and M. Kuzuhara
Presented at the 21st Kansai Colloquium, Electron Devices Workshop (online), Kyoto, Japan, Sept. 28, 2021
Controlling surface-interface states in GaN-based transistors- Surface model, insulated gate, and surface passivation (invited tutorial)
J. T. Asubar, Z. Yatabe, D. Gregusova and T. Hashizume
Journal of Applied Physics 129 (2021), 121102
Recent progress in Normally-off GaN-based transistors (invited talk)
J. T. Asubar, S. Kawabata, H. Tokuda, A. Yamamoto, and M. Kuzuhara
Presented at the Recent Topics on GaN Semiconductor Devices in Osaka University, Osaka, Japan, July 5, 2019
Effective Suppression of Current Collapse in AlGaN/GaN HEMTs (invited talk)
J. T. Asubar, H. Tokuda, and M. Kuzuhara
Presented at the 35th Samahang Pisika ng Pilipinas Physics Conference, Cebu, Philippines, June 7-10, 2017
Effect of Passivation on Breakdown voltage and dynamic on-resistance in AlGaN/GaN HEMTs (invited talk)
M. Kuzuhara, J. T. Asubar, H. Tokuda
Presented at the 2016 European Material Research Society, Warsaw, Poland, Sept. 19-26, 2016
Improved performance in MMC AlGaN/GaN HEMTs (invited lecture)
J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume
Kumamoto University, Japan, October 3, 2016
Pushing the GaN HEMT towards its theoretical limit (invited article)
J. T. Asubar, J. Ng, H. Tokuda, M, Kuzuhara
Compound Semiconductor Magazine 22 (7) (2016) 21.
Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs (invited talk)
J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume
Presented at the 34th Samahang Pisika ng Pilipinas Physics Conference, University of the Philippines Visayas, Iloilo, Philippines, August 18-21, 2016
Z. Yatabe, J. T. Asubar, and T. Hashizume
Journal of Physics D: Applied Physics 49 (39), 393001
M. Kuzuhara, J. T. Asubar, H. Tokuda
Japanese Journal of Applied Physics 55 (7) (2016) 070101
GaN-based Power Devices (invited talk)
M. Kuzuhara, J. T. Asubar, and H. Tokuda
Presented at the 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, Niigata, Japan, June
16- 19, 2015
Reduced Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs (invited lecture)
J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara
Nara Institute of Technology, Japan, May 29, 2015
Status and Prospects for GaN-based Power Transistors (invited talk)
M. Kuzuhara, J. T. Asubar, and H. Tokuda
Presented at the 1st Lecture meeting of Advanced Power Semiconductor Subcommittee (Senshin pawaa handoutai bunka-kai dai-1 kai in Japanese), Nagoya, Japan, November 19-20, 2014
MBE-grown ZnSnAs2 Epitaxial Films: A Ferromagnetic Semiconductor Host Prospect (invited book chapter)
J. T. Asubar, H. Oomae, and N. Uchitomi
Book chapter in “Chalcopyrite: Chemical Composition, Occurrence and Uses”, (2014) pp. 51-94
Nova Science Publishers, Inc., (Hauppauge) New York, ISBN: 978-1-63321-189-6
Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs (invited paper)
K. Ohi, J. T. Asubar, K. Nishiguchi, and T. Hashizume
IEEE Transactions on Electron Devices, 60, (2013), 2997
GaN Transistors for Next-generation Power Conversion System (invited Talk)
J. T. Asubar and T. Hashizume
Presented at the 1st International Symposium on Technology and Sustainability,
KMITL, Bangkok, Thailand, January 26-29, 2012