Bayartulga Ishdorj (이시도르지 바야르툴가)

Publication († Equally Credited Authors, * Corresponding Authors) 

1. B. Ishdorj et al., "Spin current enhancement using double ferromagnetic layer structure for magnetoelectric spin-orbit logic device," in preparation.

2. B. Ishdorj and T. Na*, “Spin-transfer-torque magnetic-tunnel-junction-based low-power nonvolatile flip-flop designs in the subthreshold voltage region,” IEEE Trans. Very Large Scale Integr. Syst. (TVLSI), vol. 31, no. 10, pp. 1565-1577, Oct. 2023. (SCIE) (Link)

3. B. Ishdorj†, D. Kim†, S. Ahn, and T. Na*, “Offset-canceling current-latched sense amplifier with slow rise time control and reference voltage biasing techniques,” IEEE Trans. Circuits Syst. I, Reg. Papers (TCAS-I), vol. 70, no. 7, pp. 2689-2699, Jul. 2023. (SCIE) (Link)

4. 나태희, 바야르툴가, "10-2464441: 자기 터널 접합을 이용한 저전력 기반의 비휘발성 플립플롭," Nov. 2. 2022. (국내 특허 등록)

5. B. Ishdorj†, J. Kim†, J. H. Kim, and T. Na*, “A timing-based split-path sensing circuit for STT-MRAM,” MDPI Micromachines, vol. 13, no. 7, p. 1004, Jun. 2022. (SCIE) (Link)

6. 바야르툴가, 나태희*, "Sub-threshold 전압 영역 Magnetic-tunnel-junction 기반 Body-biasing을 이용한 비휘발성 Flip-Flop," in 대한전자공학회 하계종합학술대회, Jun. 2021. (Link)