Publications

Journal Papers last updated on 2st October, 2025

2025

[31] Cho, M., Lee, T., Yu, J., Jung, S.*, AI-Based Inverse Design Model for Characteristic Impedance Optimization of Organic RDL Interposers. Journal of the Microelectronics and Packaging Society, 2025, 32(3), Accepted for publication. (KCI)

[30] Cho, T., Park, J., Jung, S.*, and Kang, M.*. Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT. IEEE Journal of the Electron Devices Society, 2025, 13, 638-642. (IF = 2.4, JCR Rank Q3 47.7%)

[30] Cho, T., Park, J., Jung, S.*, and Kang, M.*. Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT. IEEE Journal of the Electron Devices Society, 2025, 13, 638-642. (IF = 2.4, JCR Rank Q3 47.7%)

[29] Zu, H., Do, J. J., Jung, Y. H., Kang, H., Kwon, S., Kim, G. H., Kim, Y., Park, T. H., Kim, E. J., Byun, C., Kwon, J. H., Jung, S., Jung, J. W., Kang, S. H. Rational Design Strategy of Co-self-assembled Monolayers for High-efficiency and Stable Inverted Perovskite Solar Cells. Chemical Engineering Journal 2025, 511, 162010. (IF = 13.4, JCR Rank Q1 3.1%)

2024

[26] Cho, H., Park, J. H., Kim, S., Mohanan, K. U., Jung, S.*, & Kim, C.-H. Impedance characterization of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effects. Journal of Applied Physics 2024, 135, 175501. (IF = 3.2, JCR Rank Q2 61.60%)

[25] Cho, T., Jung, S.*, & Kang, M. Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings. Electronics 2024, 13(8), 1573. (IF = 2.9, JCR Rank Q2 55.30%)

2023

[24] Lee, S., Park, Y., Jung, S.*, & Kim, S. IGZO/SnOx-Based Dynamic Memristor with Fading Memory Effect for Reservoir Computing. The Journal of Chemical Physics 2023, 159(23). (IF = 4.4, JCR Rank Q1 21.40%)

[23] Park, J., Lee, Y., Horowitz, G., Jung, S.*, & Bonnassieux, Y. A Temperature Dependent Power-Law Drain Current Model for Coplanar OFETs. Journal of Materials Chemistry C 2023, 11(39), 13579–13585. (IF = 5.7, JCR Rank Q1 19.30%)

[22] Hoang, V.T.; Jeon, H.-J.; You, E.-S.; Yoon, Y.; Jung, S.*; Lee, O.-J. Graph Representation Learning and Its Applications: A Survey. Sensors 2023, 23(8), 4168. (IF = 3.4, JCR Rank Q2 31.9%)

2022

[21] Lee, H.; Kim, Y. E.; Bae, J.; Jung, S.; Sporea, R. A.; Kim, C.-H. High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide–Diketopyrrolopyrrole Polymer Interface. ACS Applied Materials & Interfaces 2022, 15(8), 10918–10925. (IF = 10.383, JCR Rank Q1 7.82%)

[20] Lee, S. H.; Kim S. H.; Jung, S.; Park, J. W.; Roh, T. M.; Lee, W.; Suh, D. W. Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform. IEEE Trans. Electron Devices 2022, 69(10) 5443-5449. (IF = 3.221, JCR Rank Q2 40.40%)

[19] Han, H.; Kim, C.-H.; Jung, S.* Vertical integration: a key concept for future flexible and printed electronics. Flexi. Print. Electron. 2022, 7, 023003. (IF = 3.768, JCR Rank Q3 50.48%)

[18] Ro, H.-S.; Kang, S.H.; Jung, S.* The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors. Materials (Basel). 2022, 15, 913. (IF = 3.748, JCR Rank Q1 22.15%)

2021

[17] Jo, S.W.; Choi, J.; Hayakawa, R.; Wakayama, Y.; Jung, S.*; Kim, C.H. Organic-semiconductor nanoarchitectonics for multi-valued logic circuits with ideal transfer characteristics. J. Mater. Chem. C 2021, 9, 15415–15421. (IF = 7.393, JCR Rank Q1  14.60%)

[16] Lee, Y.; Jung, S.; Plews, A.; Nejim, A.; Simonetti, O.; Giraudet, L.; Baranovskii, S.D.; Gebhard, F.; Meerholz, K.; Jung, S.*; et al. Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors. Phys. Rev. Appl. 2021, 15, 024021. (IF = 4.985, JCR Rank Q1 24.53%)

[15] Lee, Y.; Horowitz, G.; Jung, S.*; Bonnassieux, Y. Validity of the effective injection barrier in organic field-effect transistors. J. Phys. D. Appl. Phys. 2021, 54, 095109. (IF = 3.409, JCR Rank Q2 37.58%)

[14] Jung, S.*; Lee, Y.; Plews, A.; Nejim, A.; Bonnassieux, Y.; Horowitz, G. Effect of Gaussian Disorder on Power-Law Contact Resistance and Mobility in Organic Field-Effect Transistors. IEEE Trans. Electron Devices 2021, 68, 307–310. (IF = 3.221, JCR Rank Q2 41.40%)

2020

[13] Jung, S.*; Bonnassieux, Y.; Horowitz, G.; Jung, S.; Iniguez, B.; Kim, C.-H. Advances in Compact Modeling of Organic Field-Effect Transistors. IEEE J. Electron Devices Soc. 2020, 8, 1404–1415. (IF = 2.484, JCR Rank Q3 50.00)

[12] Lee, Y.; Kwon, J.; Jung, S.*; Kim, W.; Baek, S.; Jung, S. Reliable inkjet contact metallization on printed polymer semiconductors for fabricating staggered TFTs. Appl. Phys. Lett. 2020, 116, 153301. (IF= 3.791, JCR Rank Q2 29.06%)

2019

[11] Jung, S.; Jin, J.W.; Mosser, V.; Bonnassieux, Y.; Horowitz, G. A Compact Model and Parameter Extraction Method for a Staggered OFET With Power-Law Contact Resistance and Mobility. IEEE Trans. Electron Devices 2019, 66, 4894–4900. (IF = 2.913, JCR Rank Q2 34.52%)

[10] Jung, S.; Kwon, J.; Tokito, S.; Horowitz, G.; Bonnassieux, Y.; Jung, S. Compact modelling and SPICE simulation for three-dimensional, inkjet-printed organic transistors, inverters and ring oscillators. J. Phys. D. Appl. Phys.2019, 52, 444005. (IF = 3.169, JCR Rank Q2 28.06%)

[9] Kwon, J.; Jung, S.*; Kim, Y.H.; Jung, S. Bistaggered Contact Geometry for Symmetric Dual-Gate Organic TFTs. IEEE Trans. Electron Devices 2019, 66, 3118–3123. (IF = 2.913, JCR Rank Q2 34.52%)

2016

[8] Jin, J.W.; Jung, S.; Bonnassieux, Y.; Horowitz, G.; Stamateri, A.; Kapnopoulos, C.; Laskarakis, A.; Logothetidis, S. Universal Compact Model for Organic Solar Cell. IEEE Trans. Electron Devices 2016, 63, 4053–4059. (IF = 2.605, JCR Rank Q2 28.04%)

[7] Jung, S.*; Albariqi, M.; Gruntz, G.; Al-Hathal, T.; Peinado, A.; Garcia-Caurel, E.; Nicolas, Y.; Toupance, T.; Bonnassieux, Y.; Horowitz, G. A TIPS-TPDO-tetraCN-Based n -Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric. ACS Appl. Mater. Interfaces 2016, 8, 14701–14708. (IF = 10.383, JCR Rank Q1 7.82%)

2015

[6] Jung, S.*; Kim, C.H.; Bonnassieux, Y.; Horowitz, G. Injection Barrier at Metal/Organic Semiconductor Junctions with a Gaussian Density-of-States. J. Phys. D. Appl. Phys. 2015, 48, 395103. (IF = 2.772, JCR Rank Q1 21.03%)

[5] Jung, S.*; Kim, C.H.; Bonnassieux, Y.; Horowitz, G. Fundamental insights into the threshold characteristics of organic field-effect transistors. J. Phys. D. Appl. Phys. 2015, 48, 035106. (IF = 2.772, JCR Rank Q1 21.03%)

[4] Baert, F.; Cabanetos, C.; Leliège, A.; Kirchner, E.; Segut, O.; Alévêque, O.; Allain, M.; Seo, G.; Jung, S.; Tondelier, D.; et al. A bridged low band gap A–D–A quaterthiophene as efficient donor for organic solar cells. J. Mater. Chem. C 2015, 3, 390–398. (IF = 5.066, JCR Rank Q1 11.07%)

2013

[3] Jung, S.; Lee, Y.-I.; Youn, J.-H.; Moon, H.-T.; Jang, J.; Kim, J. Effect of the active-layer thickness on the short-circuit current analyzed using the generalized transfer matrix method. J. Inf. Disp. 2013, 14, 7–11. (KCI since 2011, SCIE since 2021, IF = 4.237, JCR Rank Q2 30.72%)

2012

[2] Kim, J.-H.; Jung, S.; Jeong, I.-K. Optical Modeling for Polarization-dependent Optical Power Dissipation of Thin-film Organic Solar Cells at Oblique Incidence. J. Opt. Soc. Korea 2012, 16, 6–12. (IF = 1.022, JCR Rank Q3 58.12%)

2011

[1] Jung, S.; Kim, K.-Y.; Lee, Y.-I.; Youn, J.-H.; Moon, H.-T.; Jang, J.; Kim, J. Optical Modeling and Analysis of Organic Solar Cells with Coherent Multilayers and Incoherent Glass Substrate Using Generalized Transfer Matrix Method. Jpn. J. Appl. Phys. 2011, 50, 122301. (IF = 1.058, JCR Rank Q3 60.40%)