Publications

(7) H Kim, JH Bae, "TBU," ICCE-ASIA 2025.

(6) JH Bae, "TBU," KPS Fall Meeting, 2025. (Invited Talk)

(5) JH Bae, "Ferroelectric-Based Next Generation FLASH Memory Technologies," 2023 Korean Conference on Semiconductor (KCS2023), 2023. (Short Course)

(4) JH Bae, "Reliability and Variability of Semiconductor Devices and Their Effect on Artificial Neural Networks," The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), 2022. (Invited Talk)

(3) JH Bae, Haesung Kim, and Hyojin Yang, "Electrical Characterization of Ferroelectric Memory Devices," 2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2022), 2022. (Invited Talk)

(2) JH Bae, "Implementation of charge trap gated-diode synaptic device with near-linear conductance response for hardware-based neural network," 2021 The IEEE Region 10 Symposium (TENSYMP 2021), 2021. (Invited Talk)

(1) JH Bae, "Ferroelectric HfO2-based devices for scalable CMOS compatible memory," Nano Convergence Conference 2021 (NCC 2021), 2021. (Invited Talk)

(13) Seung Joo Myoung†, Dong Hyeop Shin†, Jung Rae Cho, Seungki Kim*, Seong Hoon Jeon, Wonjung Kim, Jungwoo Lee, Changwook Kim, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Sungjun Kim*, Dae Hwan Kim*, "Analog switching and retention modulation in stack-designed InGaZnO memristors for neuromorphic systems", Materials Science in Semiconductor Processing, vol.199, p.109897, Nov. 2025. [IF: 4.6]

(12) Sejun Park, Hyojin Yang, Haesung Kim, Hyunwook Jeong, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Min-Kyu Park, Jong-Ho Bae*, "Analysis of operation delay and switching speed limitation due to source/drain resistance and subgap density of states in amorphous InGaZnOx/HfZrOx ferroelectric thin-film transistor", Solid-State Electronics, vol.229, p.109203, Nov. 2025. [IF: 1.4]

(11) Joon Hwang, Min-Kyu Park, Joonhyung Cho, Yeongheon Yang, Jong-Ho Bae, Jong-Ho Lee*, "Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si 3 N 4 Charge Trap Layer of Flash Memory Devices", Physical Review Letters, vol.135, no.15, p.157001, Oct. 2025. [IF: 9, Q1, Top 10%]

(10) Tae Seong Kwon, Young Jun Yoon, Do Yeon Park, Jong-Ho Bae, Young Suh Song, Hyoung Woo Kim, Jae Hwa Seo*, Sung Yun Woo*, "Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration", Scientific Reports, vol.15, no.1, p.28158, Aug. 2025. [IF: 3.9, Q1]

(9) Jinsu Kim, Hansol Kim, Hojin Moon, Wonjun Song, Jong-Ho Bae, Nagyong Choi, Sung Yun Woo*, "Analysis of Grain Boundary Effects Based on Location in a Diode-Type NAND Flash Memory Cell", 2025 Silicon Nanoelectronics Workshop (SNW), p.76-77, Jun. 2025.

(8) Hyojin Yang, Haesung Kim, Changhyeon Han, Yoon Jung Lee, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong-Ho Bae*, "Quantitative Analysis of Endurance-Dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects", 2025 Silicon Nanoelectronics Workshop (SNW), p.74-75, Jun. 2025.

(7) Jisung Im, Hansol Kim, Hojin Moon, Eunjeong Jang, Jong-Ho Bae, Sung Yun Woo*, "XNOR Logic Implementation Using a Single Steep-Switching Positive Feedback Device", 2025 Silicon Nanoelectronics Workshop (SNW), p.58-59, Jun. 2025.

(6) Jung Rae Cho, Jingyu Park, Seung Joo Myoung, Tae Jun Yang, Changwook Kim, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Ickhyun Song*, Dae Hwan Kim*, "Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor", Solid-State Electronics, vol.226, p.109084, Jun. 2025. [IF: 1.4]

(5) Seung Joo Myoung†, Hyunkyu Lee†, Dong Hyeop Shin, Youngjin Seo, Wonjung Kim, Jung Rae Cho, Changwook Kim, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Ickhyun Song*, Dae Hwan Kim*, "Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate", IEEE Transactions on Electron Devices, vol.72, no.5, p.2374-2380, May 2025. [IF: 3.2]

(4) Haesung Kim, Seung Hyeop Han, Hyunwook Jeong, Hyojin Yang, Sung-Jin Choi, Dae Hwan Kim, Jong-Ho Bae, Dong Myong Kim*, "Photonic I–V Technique With Photogating Effect for Extended Extraction of Subgap Density of States in Amorphous Oxide Semiconductor TFTs", IEEE Transactions on Electron Devices, vol.72, no.5, p.2751-2755, May 2025. [IF: 3.2]

(3) Wonsok Lee*, Daewon Ha, Y. Lee, S. Yoo, M.H. Cho, K. Yoo, S.M. Lee, S. Lee, M. Terai, T.H Lee, Jong-Ho Bae, K.J. Moon, C. Sung, M. Hong, D.G. Cho, K. Lee, S.W. Park, K. Park, B.J. Kuh, P. Yun, S. Hyun, S.J. Ahn, J. Song, "Novel Three-Dimensional DRAM Cell Architectures with IGZO-Channel and Key Technologies Toward Sub-10nm and Beyond", 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), p.1-3, Mar. 2025.

(2) Seung Joo Myoung†, Dong Hyeop Shin†, Donguk Kim, Changwook Kim, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Jiyong Woo*, Dae Hwan Kim*, "Effect of SiO2 interfacial layer on InGaZnO-based memristors for neuromorphic computing applications", Ceramics International, vol.51, no.6, p.7651-7656, Mar. 2025. [IF: 5.6, Q1, Top 10%]

(1) Dongseok Kwon, Sung Yun Woo, Joon Hwang, Hyeongsu Kim, Jong-Ho Bae, Wonjun Shin, Byung-Gook Park, Jong-Ho Lee*, "Efficient Hybrid Training Method for Neuromorphic Hardware Using Analog Nonvolatile Memory", IEEE Transactions on Neural Networks and Learning Systems, vol.36, no.1, p.807-819, Jan. 2025. [IF: 8.9, Q1, Top 10%, Top 5%]

(20) Min-Kyu Park, Joon Hwang, Soomin Kim, Wonjun Shin, Wonbo Shim, Jong-Ho Bae, Jong-Ho Lee, Seongjae Cho*, "Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computing", Scientific Reports, vol.14, no.1, p.29089, Nov. 2024. [IF: 3.8, Q1]

(19) Min-Kyu Park†, Joon Hwang†, Jonghyun Ko, Jeonghyun Kim, Jong-Ho Bae, Jong-Ho Lee*, "Analysis of Leaky Integrate-and-Fire Neuron Using Al 2 O 3 /Si 3 N 4 Gate Insulator Stack for Spiking Neural Network", ACS Applied Electronic Materials, vol.6, no.11, p.7728-7733, Nov. 2024. [IF: 4.4, Q1]

(18) Seung Hyeop Han†, Haesung Kim†, Jong-Ho Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim*, "Photovoltaic Effect De-Embedded Photonic C – V Characterization of Subgap Density of States in Amorphous Oxide Semiconductor Thin-Film Transistors", IEEE Transactions on Electron Devices, vol.71, no.11, p.6795-6798, Nov. 2024. [IF: 2.9]

(17) Min-Kyu Park†, Joon Hwang†, Ho-Nam Yoo, Jong-Ho Bae, Jae-Joon Kim, Jong-Ho Lee*, "Analysis Method of Dynamic Read Variation in a TFT-Type Synaptic Devices With Poly-Si Channel Structure", IEEE Transactions on Electron Devices, vol.71, no.10, p.5991-5996, Oct. 2024. [IF: 2.9]

(16) Min-Kyu Park†, Joon Hwang†, Jong-Ho Bae, Jae-Joon Kim, Jong-Ho Lee*, "Highly Reliable Lateral Migration-Based TFT-Type Neuron Device for Spiking Neural Networks", IEEE Electron Device Letters, vol.45, no.10, p.1780-1783, Oct. 2024. [IF: 4.1]

(15) Dong Hyeop Shin†, Seung Joo Myoung†, Donguk Kim, Changwook Kim, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Jiyong Woo*, Dae Hwan Kim*, "Effect of RF power on analog synaptic behavior of sputter-deposited InGaZnO films for neuromorphic computing applications", Ceramics International, vol.50, no.16, p.27942-27948, Aug. 2024. [IF: 5.1, Q1, Top 10%]

(14) Junwon Jang, Jungwoo Lee, Jong-Ho Bae, Seongjae Cho*, Sungjun Kim*, "InGaZnO-based synaptic transistor with embedded ZnO charge-trapping layer for reservoir computing", Sensors and Actuators A: Physical, vol.373, p.115405, Aug. 2024. [IF: 4.1, Q1]

(13) Jisung Im, Hansol Kim, Jinsu Kim, Seungmin Woo, Taeseong Kwon, Young Jun Yoon, Jong-Ho Bae, Sung Yun Woo*, "Analysis of Row Hammer and Passing Gate Effect in DRAM Cells by BCAT Structural Design", 2024 IEEE Silicon Nanoelectronics Workshop (SNW), p.91-92, Jun. 2024.

(12) Yongjin Lee, Daewon Ha*, W. Lee, S. Yoo, Jong-Ho Bae, M.H. Cho, K. Yoo, S.M. Lee, S. Lee, M. Terai, T.H. Lee, K.J. Moon, C. Sung, M. Hong, D.G. Cho, H. Kim, J. H. Seo, K. Park, B.J. Kuh, S. Hyun, S.J. Ahn, J.H. Song, "IGZO Channel VCT(Vertical Channel Transistor) Technology for sub-10nm DRAM: Challenges and Opportunites", 2024 IEEE Silicon Nanoelectronics Workshop (SNW), p.15-16, Jun. 2024.

(11) Hansol Kim, Jisung Im, Jinsu Kim, Seungmin Woo, Taeseong Kwon, Young Jun Yoon, Jong-Ho Bae, Sung Yun Woo*, "Investigation of Row Hammer and Passing Gate Effects Based on the Work Functions of Dual Gates in DRAM Cells", 2024 IEEE Silicon Nanoelectronics Workshop (SNW), p.89-90, Jun. 2024.

(10) Da Yeon Lee†, Jingyu Park†, Sangwon Lee, Seung Joo Myoung, Hyunkyu Lee, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim*, Dae Hwan Kim*, "Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors", Solid-State Electronics, vol.216, p.108921, Jun. 2024. [IF: 1.4]

(9) Jinwoo Park, Hunhee Shin, Gyuweon Jung, Seongbin Hong, Min-Kyu Park, Joon Hwang, Jong-Ho Bae, Jae-Joon Kim, Jong-Ho Lee*, "On‐Chip Annealing Using Embedded Micro‐Heater for Highly Sensitive and Selective Gas Detection", Advanced Science, vol.11, no.28, p.2401821, May 2024. [IF: 14.3, Q1, Top 10%]

(8) Hyo-In Yang, Hanbin Lee, Jeonghee Ko, Yulim An, Gyeongsu Min, Dong Myong Kim, Dae Hwan Kim, Jong-Ho Bae, Meehyun Lim*, Sung-Jin Choi*, "Simulation of a randomly percolated CNT network for an improved analog physical unclonable function", Scientific Reports, vol.14, no.1, p.8811, Apr. 2024. [IF: 3.8, Q1]

(7) Min-Kyu Park, Joon Hwang, Kyung Min Lee, Sung Yun Woo, Jae-Joon Kim, Jong-Ho Bae*, Jong-Ho Lee*, "Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training", Advanced Electronic Materials, vol.10, no.4, p.2300866, Apr. 2024. [IF: 5.3, Q1]

(6) Seongwon Lee†, Haesung Kim†, Hyojin Yang, Sanghyuk Yun, Junseong Park, Haneul Lee, Sejun Park, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon*, Jong-Ho Bae*, "Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell", IEEE Electron Device Letters, vol.45, no.4, p.562-565, Apr. 2024. [IF: 4.1]

(5) Yulim An, Hanbin Lee, Jeonghee Ko, Hyo-In Yang, Gyeongsu Min, Dong Myong Kim, Dae Hwan Kim, Jong-Ho Bae, Min-Ho Kang*, Sung-Jin Choi*, "Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors", ACS Applied Materials & Interfaces, vol.16, no.5, p.6221-6227, Feb. 2024. [IF: 8.5, Q1]

(4) Haesung Kim, Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon*, Jong-Ho Bae*, "Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer", Applied Physics Letters, vol.124, no.3, p.033503, Jan. 2024. [IF: 3.5]

(3) Kyu-Ho Lee, Dongseok Kwon, In-Seok Lee, Joon Hwang, Jiseong Im, Jong-Ho Bae, Woo Young Choi, Sung Yun Woo*, Jong-Ho Lee*, "Si‐Based Dual‐Gate Field‐Effect Transistor Array for Low‐Power On‐Chip Trainable Hardware Neural Networks", Advanced Intelligent Systems, vol.6, no.1, p.2300490, Jan. 2024. [IF: 6.8, Q1]

(2) Hyojin Yang†, Sejun Park†, Sanghyuk Yun, Haesung Kim, Haneul Lee, Min-Kyu Park, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Dongseok Kwon*, Jong-Ho Bae*, "Exploration of structural influences on the ferroelectric switching characteristics of ferroelectric thin-film transistors", Nanoscale, vol.16, no.42, p.19856-19864, Jan. 2024. [IF: 5.8, Q1]

(1) Tae Jun Yang, Jung Rae Cho, Hyunkyu Lee, Hee Jun Lee, Seung Joo Myoung, Da Yeon Lee, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim*, Jiyong Woo*, Dae Hwan Kim*, "Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor", IEEE Access, vol.12, p.28531-28537, Jan. 2024. [IF: 3.4]

(18) Dongseok Kwon*, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Joon Hwang, Jong-Ho Bae, Daewoong Kwon*, Jong-Ho Lee*, "Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems", Advanced Intelligent Systems, vol.5, no.12, p.2300125, Dec. 2023. [IF: 7.4, Q1]

(17) Yulim An†, Yongwoo Lee†, Dong-Myong Kim, Dae Hwan Kim, Jong-Ho Bae, Min-Ho Kang*, Sung-Jin Choi*, "Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization", Nanotechnology, vol.34, no.40, p.405202, Oct. 2023. [IF: 3.5]

(16) Dongseok Kwon, Min-Kyu Park, Won-Mook Kang, Joon Hwang, Ryun-Han Koo, Jong-Ho Bae*, Jong-Ho Lee*, "Hardware-Based Ternary Neural Network Using AND-Type Poly-Si TFT Array and Its Optimization Guideline", IEEE Transactions on Electron Devices, vol.70, no.8, p.4206-4212, Aug. 2023. [IF: 3.1]

(15) Dongseok Kwon, Sung Yun Woo*, Kyu-Ho Lee, Joon Hwang, Hyeongsu Kim, Sung-Ho Park, Wonjun Shin, Jong-Ho Bae, Jae-Joon Kim, Jong-Ho Lee*, "Reconfigurable neuromorphic computing block through integration of flash synapse arrays and super-steep neurons", Science Advances, vol.9, no.29, p.eadg9123, Jul. 2023. [IF: 13.6, Q1, Top 10%]

(14) Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Dongseok Kwon*, Jae-Joon Kim, Daewoong Kwon*, Jong-Ho Lee*, "1/<i>f</i> Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network", Advanced Intelligent Systems, vol.5, no.6, p.2200377, Jun. 2023. [IF: 7.4, Q1]

(13) Haesung Kim†, Han Bin Yoo†, Heesung Lee, Ji Hee Ryu, Ju Young Park, Seung Hyeop Han, Hyojin Yang, Jong-Ho Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim*, "Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors", IEEE Transactions on Electron Devices, vol.70, no.6, p.3126-3130, Jun. 2023. [IF: 3.1]

(12) Ju Young Park†, Haesung Kim†, Han Bin Yoo, Ji Hee Ryu, Seung Hyeop Han, Jong-Ho Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim*, "Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors", IEEE Transactions on Electron Devices, vol.70, no.5, p.2312-2316, May 2023. [IF: 3.1]

(11) Seung Joo Myoung†, Chang Il Ryoo†, Changwook Kim, Sung-Jin Choi, Dong Myong Kim, Jong-Ho Bae*, Dae Hwan Kim*, "Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for <i>V_T </i> Prediction Using Lateral Carrier Density Profiling Technique", IEEE Electron Device Letters, vol.44, no.4, p.630-633, Apr. 2023. [IF: 4.9]

(10) Dongseok Kwon, Hyeongsu Kim, Kyu-Ho Lee, Joon Hwang, Wonjun Shin, Jong-Ho Bae, Sung Yun Woo*, Jong-Ho Lee*, "Super-steep synapses based on positive feedback devices for reliable binary neural networks", Applied Physics Letters, vol.122, no.10, p.102101, Mar. 2023. [IF: 4]

(9) Tae Jun Yang, Je-Hyuck Kim, Jung Rae Cho, Hee Jun Lee, Kyungmin Kim, Jaewon Park, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Dong-Wook Park*, Dae Hwan Kim*, "Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design", Current Applied Physics, vol.46, p.55-60, Feb. 2023. [IF: 2.4]

(8) Juyeong Pyo, Jong-Ho Bae, Sungjun Kim*, Seongjae Cho*, "Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices", Materials, vol.16, no.3, p.1249, Feb. 2023. [IF: 3.4]

(7) Hee Jun Lee†, Donguk Kim†, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim*, Dae Hwan Kim*, "Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors", Materials Science in Semiconductor Processing, vol.153, p.107183, Jan. 2023. [IF: 4.1]

(6) Sangwon Lee†, Jingyu Park†, Ga Won Yang, Changwook Kim, Sung-Jin Choi, Dong Myong Kim, Jong-Ho Bae*, Dae Hwan Kim*, "Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature", IEEE Electron Device Letters, vol.44, no.1, p.88-91, Jan. 2023. [IF: 4.9]

(5) Min-Kyu Park†, Won-Mook Kang†, Ryun-Han Koo, Jeong-Hyun Kim, Joon Hwang, Jong-Ho Bae, Jae-Joon Kim, Jong-Ho Lee*, "Cointegration of the TFT-Type AND Flash Synaptic Array and CMOS Circuits for a Hardware-Based Neural Network", IEEE Transactions on Electron Devices, vol.70, no.1, p.93-98, Jan. 2023. [IF: 3.1]

(4) Sung Yun Woo, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee*, Jong-Ho Bae*, "Demonstration of Pulse Width Modulation Function Using Single Positive Feedback Device for Neuron", IEEE Electron Device Letters, vol.44, no.1, p.5-8, Jan. 2023. [IF: 4.9]

(3) Sungju Choi†, Ga Won Yang†, Sangwon Lee, Jingyu Park, Changwook Kim, Jun Park, Hyun-Seok Choi, Namhyun Lee, Gang-Jun Kim, Yoon Kim, Myounggon Kang, Changhyun Kim, Jong-Ho Bae*, Dae Hwan Kim*, "Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications", IEEE Transactions on Electron Devices, vol.70, no.1, p.48-52, Jan. 2023. [IF: 3.1]

(2) Dongyeon Kang, Wonjung Kim, Jun Tae Jang, Changwook Kim, Jung Nam Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Yoon Kim*, Dae Hwan Kim*, "Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor", IEEE Access, vol.11, p.20196-20201, Jan. 2023. [IF: 3.9]

(1) Jingyu Park, Sungju Choi, Seung Joo Myoung, Jae-Young Kim, Changwook Kim, Sung-Jin Choi, Dong Myong Kim, Jong-Ho Bae*, Dae Hwan Kim*, "Spatial Degradation Profiling Technique in Self-Aligned Top-Gate a-InGaZnO TFTs Under Current-Flowing Stress", IEEE Electron Device Letters, vol.44, no.1, p.96-99, Jan. 2023. [IF: 4.9]

(18) Sung Yun Woo, Won-Mook Kang, Young-Tak Seo, Soochang Lee, Dongseok Kwon, Seongbin Oh, Jong-Ho Bae, Jong-Ho Lee, "Demonstration of integrate-and-fire neuron circuit for spiking neural networks", Solid-State Electronics, vol.198, p.108481, Dec. 2022. [IF: 1.4]

(17) Michael Hoffmann, Ava Jiang Tan, Nirmaan Shanker, Yu-Hung Liao, Li-Chen Wang, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin, "Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics", IEEE Electron Device Letters, vol.43, no.12, p.2097-2100, Dec. 2022. [IF: 4.6]

(16) Jingyu Park, Shinyoung Park, Jun Tae Jang, Sung-Jin Choi, Dong Myong Kim, Jong-Ho Bae, Hong Jae Shin, Yun Sik Jeong, Jong Uk Bae, Chang Ho Oh, Changwook Kim, Dae Hwan Kim, "Effect of Positive Bias Stress on the Back-Gate Voltage-Modulated Threshold Voltage in Double-Gate Amorphous InGaZnO Thin-Film Transistors", IEEE Electron Device Letters, vol.43, no.11, p.1878-1881, Nov. 2022. [IF: 4.6]

(15) Sung-Tae Lee, Jong-Ho Bae, "Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic Devices", Micromachines, vol.13, no.11, p.1800, Oct. 2022. [IF: 3.5]

(14) Wonjun Shin, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Jae-Joon Kim, Daewoong Kwon, Jong-Ho Lee, "Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy", Applied Physics Letters, vol.121, no.16, p.163501, Oct. 2022. [IF: 3.8]

(13) Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim, Dae Hwan Kim, "Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors", Nanomaterials, vol.12, no.20, p.3582, Oct. 2022. [IF: 4.8]

(12) Tae Jun Yang, Jingyu Park, Sungju Choi, Changwook Kim, Moonsup Han, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Hong Jae Shin, Yun Sik Jeong, Jong Uk Bae, Chang Ho Oh, Dong-Wook Park, Dae Hwan Kim, "Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors", IEEE Electron Device Letters, vol.43, no.10, p.1685-1688, Oct. 2022. [IF: 4.6]

(11) Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim, Dae Hwan Kim, "Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content", Micromachines, vol.13, no.10, p.1630, Sep. 2022. [IF: 3.5]

(10) Yongwoo Lee, Jinsu Yoon, Ju Won Jeon, Hanbin Lee, Jeonghee Ko, Jong-Ho Bae, Dae Hwan Kim, Dong Myong Kim, Sung-Jin Choi, "All-Solution-Processed Carbon Nanotube Floating Gate Memories", ACS Applied Nano Materials, vol.5, no.6, p.7652-7657, Jun. 2022. [IF: 5.8]

(9) Suraj S. Cheema, Nirmaan Shanker, Cheng-Hsiang Hsu, Adhiraj Datar, Jong-Ho Bae, Daewoong Kwon, Sayeef Salahuddin, "One Nanometer HfO₂‐Based Ferroelectric Tunnel Junctions on Silicon", Advanced Electronic Materials, vol.8, no.6, p.2100499, Jun. 2022. [IF: 5.9, Q1]

(8) Wonjun Shin, Jong-Ho Bae, Dongseok Kwon, Ryun-Han Koo, Byung-Gook Park, Daewoong Kwon, Jong-Ho Lee, "Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives", IEEE Electron Device Letters, vol.43, no.6, p.958-961, Jun. 2022. [IF: 4.6]

(7) Michael Hoffmann, Ava Jiang Tan, Nirmaan Shanker, Yu-Hung Liao, Li-Chen Wang, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin, "Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs", IEEE Electron Device Letters, vol.43, no.5, p.717-720, May 2022. [IF: 4.6]

(6) Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin, "Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors", Nature, vol.604, no.7904, p.65-71, Apr. 2022. [IF: 56.1, Q1]

(5) Min-Kyu Park, Ho-Nam Yoo, Joon Hwang, Sung Yun Woo, Dongseok Kwon, Young-Tak Seo, Jong-Ho Lee, Jong-Ho Bae, "CMOS-Compatible Low-Power Gated Diode Synaptic Device for Hardware- Based Neural Network", IEEE Transactions on Electron Devices, vol.69, no.2, p.832-837, Feb. 2022. [IF: 3.6]

(4) Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jiyong Yim, Dongseok Kwon, Yeonwoo Kim, Junsu Yu, Joon Hwang, Byung-Gook Park, Daewoong Kwon, Jong-Ho Lee, "Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy", Nanoscale, vol.14, no.6, p.2177-2185, Jan. 2022. [IF: 5.2, Q1]

(3) Wonjun Shin, Jiyong Yim, Jong-Ho Bae, Jung-Kyu Lee, Seongbin Hong, Jaehyeon Kim, Yujeong Jeong, Dongseok Kwon, Ryun-Han Koo, Gyuweon Jung, Changhyeon Han, Jeonghan Kim, Byung-Gook Park, Daewoong Kwon, Jong-Ho Lee, "Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization", Materials Horizons, vol.9, no.6, p.1623-1630, Jan. 2022. [IF: 11.4, Q1]

(2) Wonjun Shin, Jong-Ho Bae, Sihyun Kim, Kitae Lee, Dongseok Kwon, Byung-Gook Park, Daewoong Kwon, Jong-Ho Lee, "Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET", IEEE Electron Device Letters, vol.43, no.1, p.13-16, Jan. 2022. [IF: 4.6]

(1) Ga Won Yang, Jingyu Park, Sungju Choi, Changwook Kim, Dong Myong Kim, Sung-Jin Choi, Jong-Ho Bae, Il Hwan Cho, Dae Hwan Kim, "Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs", IEEE Transactions on Electron Devices, vol.69, no.1, p.166-173, Jan. 2022. [IF: 3.6]

(24) S Salahuddin*, AJ Tan, SS Cheema, N Shanker, M Hoffmann, JH Bae, "FeFETs for Near-Memory and In-Memory Compute," 2021 IEEE International Electron Devices Meeting (IEDM), 2021, 19.4.

(23) W Li, LC Wang, SS Cheema, N Shanker, JH Park, YH Liao, SL Hsu, CH Hsu, S Volkman, U Sikder, AJ Tan, JH Bae, C Hu, S Salahuddin*, "Demonstration of Low EOT Gate Stack and Record Transconductance on Lg=90 nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice,"  2021 IEEE International Electron Devices Meeting (IEDM), 2021, 13.6.

(22) GW Yang, J Park, S Choi, C Kim, DM Kim, SJ Choi, JH Bae, IH Cho, DH Kim*, "Total subgap range density of states-based analysis of the effect of oxygen flow rate on the bias stress instabilities in a-IGZO TFTs," IEEE Transactions on Electron Devices, vol.69, no.1, pp.166-173, 2021.

(21) HB Yoo, H Kim, JH Ryu, J Park, JH Bae, SJ Choi, DH Kim, DM Kim*, "Modeling and characterization of photovoltaic and photoconductive effects in insulated-gate field effect transistors under optical excitation," Solid-State Electronics, vol.186, p.108139, 2021.

(20) W Shin⫮, JH Bae⫮, S Kim, K Lee, D Kwon, BG Park, D Kwon*, JH Lee*, (⫮Co-first authors) "Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET," IEEE Electron Device Letters, vol.43, no.1, pp.13-16, 2021.

(19) D Kwon, G Jung, W Shin, Y Jeong, S Hong, S Oh, J Kim, JH Bae, BG Park, JH Lee* "Efficient fusion of spiking neural networks and FET-type gas sensors for a fast and reliable artificial olfactory system," Sensors and Actuators B: Chemical, vol.345, p.130419, 2021.

(18) Y Jeong, S Hong, G Jung, W Shin, J Park, D Kim, YS Choi, JH Bae, BH Hong, JH Lee* "Highly stable Si MOSFET-type humidity sensor with ink-jet printed graphene quantum dots sensing layer," Sensors and Actuators B: Chemical, vol.343, p.130134, 2021.

(17) H Kim, HB Yoo, JH Ryu, JH Bae, SJ Choi, DH Kim, DM Kim*, "Current-to-transconductance ratio technique for simultaneous extraction of threshold voltage and parasitic resistances in MOSFETs," Solid-State Electronics, vol.183, p.108133, 2021.

(16) D Kwon, SY Woo, JH Bae, S Lim, BG Park, JH Lee*, "Hardware-based spiking neural networks using capacitor-less positive feedback neuron devices," IEEE Transactions on Electron Devices, vol.68, no.9, pp.4766-4772, 2021.

(15) J Kim, D Kwon, SY Woo, WM Kang, S Lee, S Oh, CH Kim, JH Bae, BG Park, JH Lee*, "On-chip trainable hardware-based deep Q-networks approximating a backpropagation algorithm," Neural Computing and Applications, vol.33, pp.9391-9402, 2021.

(14) D Kwon, G Jung, W Shin, Y Jeong, S Hong, S Oh, JH Bae, BG Park, JH Lee*, "Low-power and reliable gas sensing system based on recurrent neural networks," Sensors and Actuators B: Chemical, vol.340, p.129258, 2021.

(13) HN Yoo, B Choi, JW Back, HJ Kang, E Kwon, S Chung, JH Bae, BG Park, JH Lee*, "Effect of lateral charge diffusion on retention characteristics of 3D NAND flash cells," IEEE Electron Device Letters, vol.42, no.8, pp.1148-1151, 2021.

(12) G Jung, S Hong, Y Jeong, W Shin, J Park, D Kim, JH Bae, BG Park, JH Lee*, "Response Comparison of Resistor-and Si FET-Type Gas Sensors on the Same Substrate," IEEE Transactions on Electron Devices, vol.68, no.7, pp.3552-3557, 2021.

(11) ST Lee, G Yeom, H Yoo, HS Kim, S Lim, JH Bae, BG Park, JH Lee*, "Novel method enabling forward and backward propagations in NAND flash memory for on-chip learning," IEEE Transactions on Electron Devices, vol.68, no.7, pp.3365-3370, 2021.

(10) S Oh, S Lee, SY Woo, D Kwon, J Im, J Hwang, JH Bae, BG Park, JH Lee*, "Spiking Neural Networks With Time-to-First-Spike Coding Using TFT-Type Synaptic Device Model," IEEE Access, vol.9, pp.78098-78107, 2021.

(9) AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin*, "Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles," IEEE Electron Device Letters, vol.42, no.7, pp.994-997, 2021.

(8) G Jung, W Shin, S Hong, Y Jeong, J Park, D Kim, JH Bae, BG Park, JH Lee*, "Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate," Sensors and Actuators B: Chemical, vol.335, p.129661, 2021.

(7) JT Jang, HD Kim, C Kim, SJ Choi, JH Bae, DM Kim, HS Kim, DH Kim*, "Observation of Divacancy Formation for ZnON Thin-Film Transistors With Excessive N Content," IEEE Electron Device Letters, vol.42, no.7, pp.1006-1009, 2021.

(6) W Shin, D Kwon, JH Bae, S Lim, BG Park, JH Lee*, "Impacts of program/erase cycling on the low-frequency noise characteristics of reconfigurable gated Schottky diodes," IEEE Electron Device Letters, vol.42, no.6, pp.863-866, 2021.

(5) D Kang, JT Jang, S Park, MHR Ansari, JH Bae, SJ Choi, DM Kim, C Kim, S Cho, DH Kim*, "Threshold-variation-tolerant coupling-gate α-IGZO synaptic transistor for more reliably controllable hardware neuromorphic system," IEEE Access, vol.9, pp.59345-59352, 2021.

(4) JH Kim, JT Jang, JH Bae, SJ Choi, DM Kim, C Kim, Y Kim, DH Kim*, "Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors," Micromachines, vol.12, no.3, p.327, 2021

(3) JW Back, MK Park, HN Yoo, JH Bae, S Woo, BG Park, JH Lee*, "Variability of DRAM Peripheral Transistor at Liquid Nitrogen Temperature," IEEE Transactions on Electron Devices, vol.68, no.4, pp.1627-1632, 2021.

(2) J Kim, D Kwon, SY Woo, WM Kang, S Lee, S Oh, CH Kim, JH Bae, BG Park, JH Lee*, "Hardware-based spiking neural network architecture using simplified backpropagation algorithm and homeostasis functionality," Neurocomputing, vol.428, pp.153-165, 2021.

(1) D Kwon, W Shin, JH Bae, S Lim, BG Park, JH Lee*, "Investigation of low-frequency noise characteristics in gated Schottky diodes," IEEE Electron Device Letters, vol.42, no.3, pp.442-445, 2021.

(13) SY Woo, D Kwon, N Choi, WM Kang, YT Seo, MK Park, JH Bae, BG Park, JH Lee, "Low-power and high-density neuron device for simultaneous processing of excitatory and inhibitory signals in neuromorphic systems," IEEE Access, vol.8, p.202639, 2020.

(12) ST Lee, S Lim, JH Bae, D Kwon, HS Kim, BG Park, JH Lee, "Pruning for hardware-based deep spiking neural networks using gated schottky diode as synaptic devices,"  Journal of Nanoscience and Nanotechnology, vol.20, no.11 pp.6603-6608, 2020.

(11) JH Bae⫮, D Kwon⫮, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin,(⫮Co-first authors) "Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors," IEEE Electron Device Letters, vol.41, no.11, pp.1637-1640, 2020.

(10) D Kwon, S Lim, JH Bae, ST Lee, H Kim, YT Seo, S Oh, J Kim, K Yeom, BG Park, JH Lee, "On-chip training spiking neural networks using approximated backpropagation with analog synaptic devices," Frontiers in neuroscience, vol.14, p.423, 2020.

(9) ST Lee, S Lim, N Choi, JH Bae, D Kwon, HS Kim, BG Park, JH Lee, "Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells," Journal of Nanoscience and Nanotechnology, vol.20, no.7, pp.4138-4142, 2020.

(8) YT Seo, MK Park, JH Bae, BG Park, JH Lee, "Implementation of synaptic device using various high-K gate dielectric stacks," Journal of Nanoscience and Nanotechnology, vol.20, no.7, pp.4138-4142, 2020.

(7) AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, S Salahuddin* "Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs," 2020 IEEE Symposium on VLSI Technology, 2020.

(6) K Lee⫮, JH Bae⫮, S Kim, JH Lee, BG Park, D Kwon,(⫮Co-first authors) "Ferroelectric-gate field-effect transistor memory with recessed channel," IEEE Electron Device Letters, vol.41, no.8, pp.1201-1204, 2020.

(5) SY Woo, KB Choi, J Kim, WM Kang, CH Kim, YT Seo, JH Bae, BG Park, JH Lee*, "Implementation of homeostasis functionality in neuron circuit using double-gate device for spiking neural network," Solid-State Electronics, vol.165, p.107741, 2020.

(4) J Kim, CH Kim, SY Woo, WM Kang, YT Seo, S Lee, S Oh, JH Bae, BG Park, JH Lee*, "Initial synaptic weight distribution for fast learning speed and high recognition rate in STDP-based spiking neural network," Solid-State Electronics, vol.165, p107742, 2020.

(3) H Kim, JH Bae, S Lim, ST Lee, YT Seo, D Kwon, BG Park, JH Lee, "Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy," Neurocomputing, vol.378, pp.189-196, 2020.

(2) W Shin, G Jung, S Hong, Y Jeong, J Park, D Kim, D Jang, D Kwon, JH Bae, BG Park, JH Lee*, "Proposition of deposition and bias conditions for optimal signal-to-noise-ratio in resistor-and FET-type gas sensors," Nanoscale, vol.12, no.38, pp.19768-19775, 2020.

(1) Y Hong, M Wu, JH Bae, S Hong, Y Jeong, D Jang, JS Kim, CS Hwang, BG Park, JH Lee*, "A new sensing mechanism of Si FET-based gas sensor using pre-bias," Sensors and Actuators B: Chemical, vol.302, p.127147, 2020.

2019

(1) JH Bae, S Lim, D Kwon, ST Lee, H Kim, JH Lee*, "Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current," Journal of Nanoscience and Nanotechnology, vol.19, no.10, pp.6135-6138, 2019.

(2) JH Bae⫮, JW Back⫮, MW Kwon, JH Seo, K Yoo, SY Woo, K Park, BG Park, JH Lee*,(⫮Co-first authors) "Characterization of a capacitorless DRAM cell for cryogenic memory applications," IEEE Electron Device Letters, vol.40, no.10, pp.1614-1617, 2019. (Highlighted - Editor's Pick)

(3) JH Bae, S Lim, D Kwon, JH Eum, ST Lee, H Kim, BG Park, JH Lee*, "Near-linear potentiation mechanism of gated Schottky diode as a synaptic device," IEEE Journal of the Electron Device Society, vol.7, pp.335-343, 2019.

(4) JH Bae, H Kim, D Kwon, S Lim, ST Lee, BG Park, JH Lee*, "Reconfigurable field-effect transistor as a synaptic device for XNOR binary neural network," IEEE Electron Device Letters, vol.40, no.4, pp.624-627, 2019. (Highlighted - Editor's Pick)

(5) MK Park, HN Yoo, YT Seo, SY Woo, JH Bae, BG Park, JH Lee*, "Field effect transistor-type devices using high-κ gate insulator stacks for neuromorphic applications," ACS Applied Electronic Materials, vol.2, no.2, pp.323-328, 2019

(6) ST Lee, H Kim, JH Bae, H Yoo, NY Choi, D Kwon, S Lim, BG Park, JH Lee*, "High-density and highly-reliable binary neural networks using NAND flash memory cells as synaptic devices," 2019 IEEE International Electron Devices Meeting (IEDM), pp.38.4.1-38.4.4, 2019.

(7) S Hong, Y Hong, Y Jeong, G Jung, W Shin, J Park, JK Lee, D Jang, JH Bae, JH Lee*, "Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect," Sensors and Actuators B: Chemical, vol.300, p.127040, 2019.

(8) S Lim, JH Bae, JH Eum, S Lee, CH Kim, D Kwon, BG Park, JH Lee*, "Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices," Neural Computing and Applications, vol.31, pp.8101-8116, 2019.

(9) ST Lee, S Lim, NY Choi, JH Bae, D Kwon, BG Park, JH Lee*, "Operation scheme of multi-layer neural networks using NAND flash memory as high-density synaptic devices," IEEE Journal of the Electron Devices Society, vol.7, pp.1085-1093, 2019.

(10) TBU...