(Last Updated: 2026-08-18)
Education and Training
09/2026 - Present
MS/Ph.D Integrated Course in Department of Intelligent Display Engineering, Yonsei University, Seoul, Korea (Adviser: Prof. Jong-Ho Bae)
03/2020 - 08/2026
MS/Ph.D Integrated Course in Department of Intelligent Semiconductor and Display Engineering, Kookmin University, Seoul, Korea (Adviser: Prof. Jong-Ho Bae, Yoon Jung Lee, Dong Myong Kim, Dae Hwan Kim, Sung-Jin Choi)
03/2017 - 02/2020
B. S. in Electrical Engineering, Kookmin University, Seoul, Korea
International Journals
14. Hwan Jin Kim†, Hyojin Yang†, Jong-Ho Bae*, "Oxygen Vacancy Engineering for Enhanced ...", ACS Applied Materials & Interfaces, Under Review. (†Co-first Author)
13. Sujong Kim†, Hyojin Yang†, Haneul Lee, Junseong Park, Hyunwook Jeong, Sung Yun Woo, Min-Kyu Park, Haesung Kim*, Jong-Ho Bae*, "Source/drain metal work-function-dependent memory characteristics governed by ferroelectric switching-assisted current modulation in a-IGZO FeFETs", Materials Science in Semiconductor Processing, vol. 215, p. 111021, Nov. 2026. [IF: 5.2, Q1] (†Co-first Author)
12. Haesung Kim, Hyojin Yang, Yubin Choi, Hwanjin Kim, Yoon Jung Lee, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon*, Jong-Ho Bae*, "Unveiling charge trapping dynamics in SiO2/HfZrOX-based ferroelectric field-effect-transistors to minimize read-after-write latency", Current Applied Physics, vol. 89, pp. 181-185, Sep. 2026. [IF: 2.8]
11. Hwan Jin Kim, Hyojin Yang, Haesung Kim, Sejun Park, Ha-Neul Lee, Sung-Jin Choi, Dong Myong Kim, Dae Hwan Kim, Min-Kyu Park*, Jong-Ho Bae*, "Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics", Solid-State Electronics, vol. 235, p. 109358, Aug. 2026. [IF: 1.4]
10. Haesung Kim, Ju Young Park, Seung Hyeop Han, Hyojin Yang, Yoon Jung Lee, Sung-Jin Choi, Dae Hwan Kim, Jong-Ho Bae, Dong Myong Kim*, "Characterization of Low-Temperature Intrinsic Field-Effect Mobility With Contact Resistances in Amorphous InGaZnO Thin Film Transistors", IEEE Transactions on Electron Devices, vol. 73, no. 7, pp. 4341-4345, Jul. 2026. [IF: 3.6]
9. Yubin Choi, Hyojin Yang, Hwan Jin Kim, Sejun Park, Yoon Jung Lee, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Haesung Kim*, Jong-Ho Bae*, "Characterization of trap dynamics via transient response in amorphous InGaZnO thin-film transistors", Applied Physics Letters, vol. 128, no. 24, p. 243505, Jun. 2026. [IF: 3.8]
8. Hyojin Yang, Haesung Kim, Hwan Jin Kim, Dong Myong Kim, Sung-Jin Choi, Dae Hwan Kim, Yoon Jung Lee, Jong-Ho Bae*, "Defect-mediated enhancement of memory window in IGZO-channel ferroelectric field effect transistors", Materials Science in Semiconductor Processing, vol. 204, p. 110268, Mar. 2026. [IF: 5.2, Q1]
7. Haneul Lee†, Sujong Kim†, Changhyeon Han†, Haesung Kim, Hyojin Yang, Sejun Park, Sanghyuk Yun, Yoon Jung Lee, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon*, Jong-Ho Bae*, "Quantitative Analysis on Interaction between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor", Advanced Electronic Materials, vol. 12, no. 2, p. e00549, Jan. 2026. [IF: 5.3, Q1]
6. Sejun Park, Hyojin Yang, Haesung Kim, Hyunwook Jeong, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Min-Kyu Park, Jong-Ho Bae*, "Analysis of operation delay and switching speed limitation due to source/drain resistance and subgap density of states in amorphous InGaZnOx/HfZrOx ferroelectric thin-film transistor", Solid-State Electronics, vol. 229, p. 109203, Nov. 2025. [IF: 1.4]
5. Haesung Kim, Seung Hyeop Han, Hyunwook Jeong, Hyojin Yang, Sung-Jin Choi, Dae Hwan Kim, Jong-Ho Bae, Dong Myong Kim*, "Photonic I–V Technique With Photogating Effect for Extended Extraction of Subgap Density of States in Amorphous Oxide Semiconductor TFTs", IEEE Transactions on Electron Devices, vol. 72, no. 5, pp. 2751-2755, May 2025. [IF: 3.2]
4. Seongwon Lee†, Haesung Kim†, Hyojin Yang, Sanghyuk Yun, Junseong Park, Haneul Lee, Sejun Park, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon*, Jong-Ho Bae*, "Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell", IEEE Electron Device Letters, vol. 45, no. 4, pp. 562-565, Apr. 2024. [IF: 4.1]
3. Haesung Kim, Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon*, Jong-Ho Bae*, "Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer", Applied Physics Letters, vol. 124, no. 3, p. 033503, Jan. 2024. [IF: 3.5]
2. Hyojin Yang†, Sejun Park†, Sanghyuk Yun, Haesung Kim, Haneul Lee, Min-Kyu Park, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Dongseok Kwon*, Jong-Ho Bae*, "Exploration of structural influences on the ferroelectric switching characteristics of ferroelectric thin-film transistors", Nanoscale, vol. 16, no. 42, pp. 19856-19864, Jan. 2024. [IF: 5.8, Q1] (†Co-first Author)
1. Haesung Kim†, Han Bin Yoo†, Heesung Lee, Ji Hee Ryu, Ju Young Park, Seung Hyeop Han, Hyojin Yang, Jong-Ho Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim*, "Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors", IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3126-3130, Jun. 2023. [IF: 3.1]
Conference
1. Hyojin Yang, Haesung Kim, Changhyeon Han, Yoon Jung Lee, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong-Ho Bae*, "Quantitative Analysis of Endurance-Dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects", 2025 Silicon Nanoelectronics Workshop (SNW), pp. 74-75, Jun. 2025.