Carrier
03/2026 - (Present) Ph. D student in Yonsei University, Seoul, Korea (Adviser: Prof. Jong-Ho Bae)
Education and Training
03/2023 - 02/2026 M. S. in Department of Intelligent Semiconductor and Display Engineering, Kookmin University, Seoul, Korea (Adviser: Prof. Jong-Ho Bae, Sung-Jin Choi)
03/2017 - 02/2023 B. S. in Electrical Engineering, Kookmin University, Seoul, Korea
International Journals
1. H. Lee†, S. Kim†, C. Han†, H. Kim, H. Yang, S. Park, S. Yun, Y. J. Lee, S.-J. Choi, D. H. Kim, H. Kim, H. Yang, S. Park, S. Yun, D. M. Kim, D. Kwon, and J.-H. Bae, "Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor", Adv. Electron. Mater., vol. 11, doi: https://doi.org/10.1002/aelm.202500549. (†Co-first Author)
Conference
1. H. N. Lee, H. Yang, H. Kim, S. Yun, S. Lee, S.-J. Choi, D. M. Kim, D. H. Kim, and J.-H. Bae, “Analysis on electric field and polarization switching in ferroelectric HfO2 amorphous InGaZnOx thin-film transistor,” in Proc. 30th Korean Conf. Semiconductors (KCS), Feb. 2023
2. H.-N. Lee, H. Yang, S. Park, H. Kim, S. Yun, S.-J. Choi, D. M. Kim, D. H. Kim, and J.-H. Bae, “Comparative analysis of initial and polarization switching-induced program/erase state I–V and C–V characteristics in ferroelectric HZO amorphous InGaZnOx thin-film transistor,” in Proc. 31st Korean Conf. Semiconductors (KCS), Feb. 2024.