(Last Updated: 2024-05-14)
Carrier
09/2025 - (Present) Postdoctoral Researcher in Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
Education and Training
03/2022 - 08/2025 Ph. D. in Electrical Engineering, Kookmin University, Seoul, Korea (Adviser: Prof. Jong-Ho Bae)
03/2020 - 02/2022 M. S. in Electrical Engineering, Kookmin University, Seoul, Korea (Adviser: Prof. Dong Myong Kim)
03/2014 - 02/2020 B. S. in Electrical Engineering, Kookmin University, Seoul, Korea
International Journals
1. S. Lee†, H. Kim†, H. Yang, S. Yun, J. Park, H. Lee, S. Park, S.-J. Choi, D. H. Kim, D. M. Kim, D. Kwon, and J.-H. Bae, "Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell," IEEE Electron Device Letters, doi: 10.1109/LED.2024.3360419. (†Co-first Author)
2. H. Kim, H. Yang, S. Lee, S. Yun, J. Park, S. Park, H.-N. Lee, H. Kim, S.-J. Choi, D. H. Kim, D. M. Kim, D. Kwon, and J.-H. Bae, " Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer," Appl. Phys. Lett., doi: 10.1063/5.0172204.
3. H. Kim, H. B. Yoo, H. Lee, J. H. Ryu, J. Y. Park, S. H. Han, H. Yang, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim, "Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors," IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3126-3130, June 2023, doi: 10.1109/TED.2023.3269735.
4. J. Y. Park†, H. Kim†, H. B. Yoo, J. H. Ryu, S. H. Han, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim, "Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage with Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors," IEEE Transactions on Electron Devices, vol. 70, no. 5, pp. 2312-2316, May 2023, doi: 10.1109/TED.2023.3253468. (Co-first Author)
5. J.-T. Yu, H. B. Yoo, H. S. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim “Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect” Journal of Nanoscience and Nanotechnology, Vol. 21, No. 8, pp. 4315–4319, doi: 10.1166/jnn.2021.19391, 2021-08
6. H. B. Yoo, H. Kim, J. H. Ryu, J. Park, J. -H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim “Modeling and Characterization of Photovoltaic and Photoconductive Effects in Insulated-Gate Field Effect Transistors under Optical Excitation” Solid-State Electronics, vol. 186, p. 108139, doi: 10.1016/j.sse.2021.108139, 2021-06
7. H. Kim, H. B. Yoo, J. H. Ryu, J.-H. Bae, S.-J. Choi, D. H. Kim and D. M. Kim “Current-to-Transconductance Ratio Technique for Simultaneous Extraction of Threshold Voltage and Parasitic Resistances in MOSFETs” Solid-State Electronics, Vol. 183, p.108133, doi: 10.1016/j.sse.2021.108133, 2021-06
8. H. B. Yoo, J. Yu, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim “Deep Depletion Capacitance-Voltage Technique for Spatial Distribution of Traps Across the Substrate in MOS Structures” Solid-State Electronics, vol. 173, p.107905, doi:10.1016/j.sse.2020.107905, 2020-10
9. H. Kim, H. B. Yoo, J.-T. Yu, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim “Alternating Current-Based Technique for Separate Extraction of Parasitic Resistances in MISFETs With or Without the Body Contact” IEEE Electron Device Lett., vol. 41, no. 10, pp. 1528–1531, doi: 10.1109/LED.2020.3020405., 2020-10
Conference
1. H. Kim, J. Park, J. Im, H. Kim, Y. J. Yoon, Y.-M. Kim, K. Park, S. Y. Woo, and J.-H. Bae, "Impact of Proton Irradiation on SiNx and Si–SiO2 Interfaces in FLASH Memory," 2024 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 2024, pp. 1-2.
2. J. Park, S. Lee, H. Kim, H. Jeong, Y Choi, S.-J. Choi, D. M. Kim, D. H. Hwan, and J.-H. Bae, "Comparative Analysis of the Low-Frequency Noise Behavior of a-IGZO TFT with Different Source/Drain Metal" The 31th Korean Conference on Semiconductors (KCS), 2024-01
3. Y. Choi, H. Kim, H. Yang, S. Park, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim, J.-H. Bae "Analysis on Drain Current Transient Response in Amorphous InGaZnOx Thin-Film Transistors" The 31th Korean Conference on Semiconductors (KCS), 2024-01
4. S. H. Han, H. Kim, J. Y. Park, J.-H Bae, S.-J. Choi, D. H. Kim, D. M. Kim, "Extraction of Subgap Density-of-States in AOS TFTs through Capacitance-Voltage Characteristics Considering Photovoltaic Effect", The 31th Korean Conference on Semiconductors (KCS), 2024-01
5. H.-N. Lee, H. Yang, S. Park, H. Kim, S. Yun, S.-J. Choi, D. H. Hwan, D. M. Kim, and J.-H. Bae, "Analysis and Modeling of Ferroelectric Amorphous InGaZnOx Thin-Film Transistor at Initial State and During Memory Operation" The 31th Korean Conference on Semiconductors (KCS), 2024-01
6. S. Park, H. Yang, H. Kim, S. Yun, H. N. Lee, D. M. Kim, D. H. Kim, S.-J. Choi, and J.-H. Bae," Comparative Analysis of Polarization Switching Characteristics in Channel and Contact regions of Ferroelectric InGaZnOx Thin Film Transistor" The 31th Korean Conference on Semiconductors (KCS), 2024-01
7. S. J. Kim, H. N. Lee, H. J. Yang, H. Kim, S. J. Park, S.-J. Choi, D. M. Kim, D. H. Kim, J.-H. Bae "Analysis of interface state according to the polarization switching of ferroelectric field-effect transistor" The 31th Korean Conference on Semiconductors (KCS), 2024-01
8. H. B. Yoo, H. Kim, J. Ryu, J. Y. Park, S. H. Han, H.-I. Yang, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim, "Characterization of Lateral Trap Distribution in a-InGaZnO TFTs through Capacitance-Voltage Technique Combined with Extended Channel Conduction Factor" The 30th Korean Conference on Semiconductors (KCS), 2023-02
9. J. Park, S. Lee, H. Kim, S.-J. Choi, D. M. Kim, D. H. Kim, and J.-H. Bae "Optimization of Memory Properties of 2T-DRAM Cell by a-IGZO TFT Engineering" The 30th Korean Conference on Semiconductors (KCS), 2023-02
10. J. Y. Park, H. B. Yoo, H. Kim, J. H. Ryu, S. H. Han, J.-H. Bae, S. Choi, D. H. Kim and D. M. Kim "Extraction Technique for Characteristic Parameters in Si MOSFETs through the Dual Sweep Current-to-Transconductance Ratio" The 30th Korean Conference on Semiconductors (KCS), 2023-02
11. S. Park, H. Yang, H. Kim, S. Yun, D. M. Kim, D. H. Kim, S.-J. Choi, and J.-H. Bae "Effect of IGZO/HfO2 Ferroelectric Capacitor Structure on Polarization Switching" The 30th Korean Conference on Semiconductors (KCS), 2023-02
12. S. H. Han, H. B. Yoo, H. Kim, J. Ryu, J. Y. Park, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Photovoltaic and Photoconductive Responses in Amorphous Oxide Semiconductor Thin-Film Transistors" The 30th Korean Conference on Semiconductors (KCS), 2023-02
13. H. B. Yoo, H. Kim, Y. Lee, J. H. Ryu, J. Y. Park, H. J. Yang, J.-H. Bae, D. H. Kim, S.-J. Choi, and D. M. Kim, "Characterization Technique for Interface Traps in Si Nanosheet GAA MOSFETs through Subthreshold I-V Characteristics," 2022 IEEE 22nd International Conference on Nanotechnology (NANO), Palma de Mallorca, Spain, 2022, pp. 116-119, doi: 10.1109/NANO54668.2022.9928778. (Co-first Author)
14. S. Lee, H. Kim, H. Yang, S. Yun, S.-J. Choi, D. H. Kim, D. M. Kim, and J.-H. Bae, “Analysis of Memory Window Degradation Mechanism by Unipolar and Bipolar stress in HfO2-based FeFETs” Summer Annual Conference of IEIE, 2022-06
15. S.-H. Yun, H. Kim, H. Yang, S. Lee, S.-J. Choi, D. H. Kim, D. M. Kim, and J.-H. Bae, “Analysis on Leakage Current of Gated Diode Memory Device and Suggestion of Improved Device Structure” Summer Annual Conference of IEIE, 2022-06
16. H. Yang, H. Kim, S. Yun, S. Lee, D. M. Kim, D. H. Kim, S.-J. Choi, and J.-H. Bae, “Effect of Annealing Sequence on the a-IGZO FeTFT Ferroelectric Switching Characteristics” Summer Annual Conference of IEIE, 2022-06
17. J. Y. Park, H. Kim, H. B. Yoo, J. H. Ryu, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim, “Comprehensive DC Technique for Extraction of Threshold Voltage, Parasitic Resistances, and Mobility Enhancement Parameter in AOS TETs” The 28th Korean Conference on Semiconductors, 2021-01 (Co-first Author)
18. J. H. Ryu, H. B. Yoo, J. Yu, H. Kim, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim “Extraction of Interface Traps over the Bandgap through Photovoltaic and Photoconductive Effects in Si MOSFETs under Optical Excitation” The 28th Korean Conference on Semiconductors, 2021-01
19. H. B. Yoo, H. Kim, J. Yu, Y. J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim “Alternating Current-based Open Drain Method for Separate Extraction of Source and Drain Resistances in MOSFETs” The 27th Korean Conference on Semiconductors, 2020-02 (Co-first Author, Presenter)
20. J. Yu, H. B. Yoo, H. Kim, Y. J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim “Characterization of Spatial Distribution of Traps across the Substrate in Metal-Insulator-Semiconductor Structures with Band Bending Effect” The 27th Korean Conference on Semiconductors, 2020-02
21. H. B. Yoo, Y. J. Park, J. Yu, H. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim “Modeling and Characterization of the Photovoltaic and Photoconductive Effects in Field Effect Transistors under Optical Illumination” The 27th Korean Conference on Semiconductors, 2020-02
Awards and Scholarship
1. Excellent Poster Award on Site, The 30th Korean Conference on Semiconductors
2. Excellent Talent Award in Spring 2022, Kookmin University