Patents
심원보, 다수의 메모리 어레이에 공유된 센싱 회로를 포함하는 메모리 장치 및 이를 동작시키는 방법, Korean Patent filed No. 10-2024-0067250.
심원보, 공성환, 반도체 소자, 이를 포함하는 반도체 장치 및 그의 제조방법, Korean Patent filed No. 10-2023-0106380.
심원보, 육찬기, 메모리 어레이 내에서의 연산 보정 방법 및 장치, Korean Patent filed No. 10-2023-0034716.
Wonbo Shim, Sang-Wan Nam, Jiho Cho, Method of erasing data in nonvolatile memory device and nonvolatile memory device performing the same, US Patent US 11,056,194 B2, 2021.
Sang-Won Park, Wonbo Shim*, Bong Soon Lim, Nonvoltile memory device and erase method thereof, US Patent disclosed 2020/0303011 A1, 2020. (*Inventor)
Bongsoon Lim, Hojoon Kim, Sang-Won Park, Sang-Won Shim, Wonbo Shim, Semiconductor memory device including parallel structure, US Patent US 11,011,208 B2, 2021.
Shim, Won-Bo; Cho, Ji-Ho; Kim, Yong-Seok; Kim, Byoung-taek; Hwang, Sun-gyung; Nonvolatile memory device and program method of the same, US Patent 10,424,381, 2019
Sang-Wan Nam, Wonbo Shim, Jiho Cho, Three-dimensional memory device having a plurality vertical channel structures, US Patent 10680013, 2020.
Shim, Won-Bo; Method of detecting erase fail word-line in non-volatile memory device, US Patent 9,704,596, 2017
Park, Sang-Soo; Kim, Yoon; Shim, Won-Bo; Memory device, memory system, method of operating the memory device, and method of operating the memory system, US Patent 9,824,765, 2017
Shim, Wonbo; Nonvolatile memory device, erase method thereof and memory system including the same, US Patent 9,514,828, 2016
Park, Byung-gook; Cho, Seongjae; Shim, Won Bo; 3D stacked array having cut-off gate line and fabrication method thereof, US Patent 8,786,004, 2014
박병국, 심원보, 기둥형 단결정 채널 및 가상 소스/드레인을 갖는 낸드 플래시 메모리 어레이 및 그 제조방법, Korean Patent No. 10-1069420, 2011
박병국, 박일한, 심원보, 수직 적층구조를 갖는 앤드형 플래시 메모리 어레이와 그제작방법 및 동작방법, Korean Patent No. 10-1037621, 2011