Research

As the semiconductor industry navigates the "post-Moore" era, characterized by increasing demand for data computation, power efficiency, and limitations in device scaling, there is an urgent need for innovative solutions. Two crucial challenges should be addressed in this evolving landscape: First, one should improve power management in sub-5 nm silicon-based logic devices, where the short channel effect is a significant hurdle toward “More Moore”. Second, latency between memory and logic, a longstanding issue in von Neumann architectures, should be reduced toward “Beyond Moore”. 

To respond this technical demands, we aim to focus our research on quantum materials and devices beyond Moore, integrating artificial intelligence and quantum technologies. We will also focus on investigation of new quantum phenomena in artificial heterostructures.

The research theme is categorized into three phases as follows:

(1) Atomic-Layer Synthesis of 2D Quantum Materials 

Focus: Large-area, phase-pure, and CMOS-compatible growth

Techniques: MOCVD, source-confined growth, and data-driven optimization

Materials: 2D Semiconductors, Ferroelectrics, Superconductors, and Topological materials

Goal: Precise control over thickness, phase, and interfacial quality for interface-ready vdW systems

(2) Programmable Quantum Emitters

Focus: Integrating lateral or vertical vdW heterostructures with electrically tunable order parameters

Physics: Deterministic single-photon emission, tunable excitons, and ferroelectric polarization

Goal: Developing nonvolatile and field-controllable quantum states for quantum photonics

(3) Quantum-Engineered Nanoelectronics 

Focus: Room-temperature post-CMOS devices to cryogenic quantum circuits

Devices: Ferroelectric FETs, tunneling transistors, vdW Josephson junctions, and superconducting qubits

Applications: Classic-quantum interfaces, low-noise cryogenic electronics, and scalable quantum information processing platforms