Research

As the semiconductor industry navigates the "post-Moore" era, characterized by increasing demand for data computation, power efficiency, and limitations in device scaling, there is an urgent need for innovative solutions. Two crucial challenges should be addressed in this evolving landscape: First, one should improve power management in sub-5 nm silicon-based logic devices, where the short channel effect is a significant hurdle toward “More Moore”. Second, latency between memory and logic, a longstanding issue in von Neumann architectures, should be reduced toward “Beyond Moore”. 

To respond this technical demands, we aim to focus our research on quantum materials and devices beyond Moore, integrating artificial intelligence and quantum technologies. We will also focus on investigation of new quantum phenomena in artificial heterostructures.

The research theme is categoraized to the three phases as follows:

(1) Growth of large-area, high-quality 2D superconductors, 2D topological insulators, and 2D ferroelectrics with a CMOS compatible processes

(2) Fabrication of various quantum heterostructures to study bound excitons, Moiré physics, sliding ferroelectricity, Mott transitions, and superconducting proximity effects

(3) Development of quantum device and circuits for in-sensor and in-memory computing systems, while studying the field of quantum circuits