Thin Film Transistor

Electronic device; Next-generation field-effect transistors based on advanced materials

1. High hole mobility inorganic halide perovskite field-effect transistors with enhanced phase stability and interfacial defect tolerance; The core of this study is to optimize halide perovskites in the active layer of transistors using dopants or additives and to analyze the resulting transistor performance associated with the perovskite material properties.

2. Non-volatile metal-insulator transition (MIT) field-effect transistor driven by polarization reversal; The key of this topic is to determine the resistance change of vanadium dioxide (VO₂) due to the polarization behavior of BFO by controlling the interface between BFO and VO₂ as epitaxial growth.

Fe-FET performance study with memory function using polarization of ferroelectric material as insulator layer.

The transfer curve with hysteresis loop is measured using a ferroelectric material with a large P_r and low V_c. Using hysteresis loop in transfer curve, Fe-FET could be a memory device and verified the operation performance under various conditions.