Micro-LEDs

Micro-light-diodes (micro-LEDs) has excellent advantages such as high brightness, fast response speed, outstanding resolution, low power consumption, thermal stability and enhanced light extraction, attracting attention as a key element of next-generation display technology that can overcome the limitations of conventional display technologies. However, there is a great diffculty in commercializing micro-LED display due to plasma etching process problems.Recently, our group implemented a core-shell-like micro-LED array using sapphire nano-membrane that does not require a harmful plasma etching process. In addition, it was confirmed that there is no wavelength change according to current density in high-efficiency micro-LED, and it is expected to greatly contribute to the commercialization of micro-LED display.

We develop a novel method for fabrication of micro-LEDs using sapphire nano-membrane template. With this technique, high efficiency micro-LEDs with low defect density could be obtained without damaging the chip. Moreover, using the sapphire nano-membrane template, size and shape of the micro-LED chips could be easily changed depending on the applications. Our findings would be a key technology for commercializing micro-LED display.

III-V compound semiconductors have been widely used for light-emitting diodes. Nanorod LED, consist of non-polar m-plane GaN, is a promising candidate for next generation optoelectronic device. Nanorod core-shell LEDs reduce piezoelectric polarization in InGaN MQW, which enables high In doping. Therefore, GaN based device with wide range of emission wavelengths can be fabricated. External quantum efficiency (EQE) is increased due to large surface to volume ratio in MQW.