2001-2004
“Mechanism for ohmic contact formation of Ni/Ag contacts onp-type GaN”
H. W. Jang and J.-L. Lee
Applied Physics Letters 85, 5920-5922 (2004)
“Low resistance and high reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN”
H. W. Jang and J.-L. Lee
Applied PhysicsLetters 85, 4421-4423 (2004)
“Ohmic contacts for high power LEDs”
H. W. Jang, J. K. Kim, S. Y. Kim, H. K. Yu, and J.-L. Lee
Physica Status Solidi (a) 201, 2831-2836 (2004)
“High-brightness GaN-based light-emitting diode with indium-tin-oxid-basedtransparent ohmic contact"
S. Y. Kim, H. W. Jang and J.-L. Lee
Journal of Vacuum Science and Technology B 22, 1851-1856 (2004)
“Incorporation of OxygenDonors in AlGaN”
H. W. Jang, J. M. Baik, M.-K. Lee, H.-J. Shin, and J.-L. Lee
Journal of The Electrochemical Society 151, G536-G540 (2004)
“P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/ AlyGa1-yN superlattices with average Al mole fraction> 20 %”
J. K. Kim, E. L. Waldron, Y. L. Li, T. Gessmann, E. F. Schubert, H. W. Jang, and J. L. Lee
Applied Physics Letters 84, 3310 (2004)
"Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface"
J. K. Yang, H.-H. Park, H. Kim, H. W. Jang, J. L. Lee, and S. Im
Thin Solid Films 447, 626 (2003)
"Mechanism for the increase of indium-tin-oxide work function by O2 inductively-coupledplasma treatment"
K. H. Lee, H. W. Jang, K.-B. Kim, Y. H. Tak and J. L. Lee
Journal of Applied Physics 95, 586 (2004)
"Current conductionmechanism of Pt/GaN and Pt/Al0.35Ga0.65N Scottky diodes"
J. K. Kim, H. W. Jang, and J. L. Lee
Journal of Applied Physics 94, 7201(2003)
“Co-implantation of Mn + N into p-type GaN for high TCferromagnetism”
J. M. Baik, H. W. Jang, H.-J. Shin, M.-K. Lee, Y. Shon, T. W. Kang, and J.-L. Lee
Physica Status Solidi (c) 0, 2878 (2003)
“Investigation of oxygen incorporation in AlGaN/GaN heterostructures”
H. W. Jang, M.-K. Lee, H.-J. Shin, and J.-L. Lee
Physica Status Solidi (c) 0, 2456 (2003)
“Two-step temperature ramping technique in MOCVD GaN films with high electromechanical coupling coefficients”
J.-H. Lee, K.-Y. Park, S.-B. Bae, D.-H. Youn, K.-S. Lee, C.-M. Jeon, H. W. Jang, J.-L. Lee, H.-K. Cho, M.-B.Lee, S.-H. Hahm, Y.-H. Lee, and J.-H. Lee
Physica Status Solidi (c) 0, 2006 (2003)
“Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemissionspectroscopy”
H. W. Jang, K. W. Ihm, T.-H. Kang, J.-H. Lee, and J.-L. Lee
Physica Status Solidi (b)240, 451 (2003)
"Effects of KrF excimer laser irradiation on metalcontacts to n-type and p-type GaN"
H. W. Jang, T. Sands, and J.-L. Lee
Journal of Applied Physics 94, 3529 (2003)
"Effect of Cl2 plasma treatment on metal contacts on n-type and p-type GaN"
H. W. Jang and J.-L. Lee
Journal of The Electrochemical Society 150, G 513 (2003)
"Mechanism for ohmic contact formation ofoxidized Ni/Au on p-type GaN"
H. W. Jang, S. Y. Kim and J.-L. Lee
Journal of Applied Physics 94, 1748 (2003)
"IrO2 Schottky contact on n-type 4H-SiC"
S. Y. Han, H. W. Jang, and J.-L. Lee
Applied Physics Letters 82, 4726 (2003)
"Transparent ohmic contacts of oxidized Ru and Ir on p-typeGaN"
H. W. Jang and J.-L. Lee
Journal of Applied Physics 93, 5416 (2003)
"Microstructural and electrical investigation of low-resistant and thermally stable Pd/Ni contact on p-typeGaN"
H. W. Jang, H. K. Cho, J. Y. Lee, and J.-L. Lee
Journal of The Electrochemical Society 150, G212 (2003)
"Observation of inductively-coupled-plasma-induced damage on n-typeGaN using deep-level transient spectroscopy"
K. J. Choi, H. W. Jang, and J.-L. Lee
Applied Physics Letters 82, 1233 (2003)
"Effect of microstructural change on magnetic property of Mn-implanted p-type GaN"
J. M. Baik, H. W. Jang, J. K. Kim, and J.-L. Lee
Applied Physics Letters 82, 583 (2003)
"Electrical properties of metal contacts on laser-irradiated n-type GaN"
H. W. Jang, J. K. Kim, J.-L. Lee, J. Schroeder, and T. Sands
Applied Physics Letters 82, 580 (2003)
"Thermally stable Ir contact on AlGaN/GaN heterostructure"
C. M. Jeon, H. W. Jang, and J.-L. Lee
Applied Physics Letters 82, 391 (2003)
"Effect of Indium tin oxide overlayer on transparent Ni/Au ohmiccontact on p-type GaN"
S. Y. Kim, H. W. Jang, and J.-L. Lee
Applied Physics Letters 82, 61 (2003)
"Microstructural study of Pt contact on p-type GaN"
J. K. Kim, H. W. Jang, C. C. Kim, J. H. Je, K. A. Rickert, T. F. Kuech, and J.-L. Lee
Journal of Vacuum Science and Technology B 21, 87 (2003)
"GaN metal-semiconductor-metal ultraviolet photodetector with IrO2Schottky contact"
J. K. Kim, H. W. Jang, C. M. Jeon, and J.-L. Lee
Applied Physics Letters 81, 4655 (2002)
"Transparent ohmic contacts on p-GaN using indium tin oxideoverlayer"
S. Y. Kim, H. W. Jang, K. H. Kim, and J.-L. Lee
Physica Status Solidi(c) 0, 214 (2002)
"Low-resistance, high-transparency,and thermally stable ohmic contacts on p-type GaN using Ru and Ir"
H. W. Jang, C. M. Jeon, K. H. Kim, and J.-L. Lee
Physica Status Solidi (c) 0, 227 (2002)
"Microstructural investigation and magnetic properties of the p-type GaN implanted with Mn+ions"
J. M. Baik, J. K. Kim, H. W. Jang, K. H. Kim, Y. Shon, T. W. Kang, and J.-L. Lee
Physica Status Solidi (b)234, 943 (2002)
"Characterization of inductively-coupled-plasma damages on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemissionspectroscopy"
K. J. Choi, H. W. Jang, and J.-L. Lee
Physica Status Solidi (b) 234, 835 (2002)
"Low-resistance Ti/Al ohmiccontact on undoped ZnO”
S. Y. Kim, H. W. Jang, J. K. Kim, C. M. Jeon, W. I. Park, G.-C. Yi, and J.-L. Lee
Journal of the Electronic Materials 32, 868 (2002)
"Effects of photowashing treatment on electrical propertiesof AlGaN/GaN heterostructure field-effect transistor"
K. J. Choi, C. M. Jeon, H. W. Jang and J.-L. Lee
Journal of Vacuum Science and Technology B20, 574 (2002)
"Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaNheterostructures"
H. W. Jang, C. M. Jeon, K. H. Kim, J. K. Kim, S.- B. Bae, J.- H. Lee, J. W. Choi, and J.-L. Lee
Applied Physics Letters 81, 1249 (2002)
"Room-Temperature Ohmic Contact on AlGaN/GaN Heterostructure with Surface Treatment Using N2 Inductively Coupled Plasma"
C. M. Jeon, H. W. Jang, K. J. Choi, S. -B. Bae, J.-H. Lee, and J.-L. Lee
Electrochemical and Solid-State Letters 5, G45 (2002)
"Mechanism for ohmic contact formation of Ti on n-type GaNinvestigated using synchrotron radiation photoemission spectroscopy"
J. K. Kim, H. W. Jang, and J.-L. Lee
Journal of Applied Physics 91, 1214 (2002)
"Characterization of band bendings on Ga-faceand N-face GaN films grown by metalorganic chemical vapor deposition"
H. W. Jang, J. H. Lee, and J.-L. Lee
Applied Physics Letters 80, 3955 (2002)
"Fabrication of AlGaN/GaN HFET using room-temperature ohmic contact"
C. M. Jeon, H. W. Jang, K. J. Choi, S.-B. Bae, J.-H. Lee, and J.-L. Lee
Solid State Electronics 46, 695 (2002)
"Low-resistant and high-transparentRu/Ni ohmic contact on p-type GaN"
H. W. Jang, W. Urbanek, M. C. Yoo, and J.-L. Lee
Applied Physics Letters 80, 2937 (2002)
“Investigation for the Formation of Polarization-Induced Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field Effect Transistors”
H. W. Jang, C. M. Jeon, K. H. Kim, J. K. Kim, S.-B. Bae, J.-H. Lee , J. W. Choi, and J.-L. Lee
Physica Status Solidi (b) 228, 621 (2001)
“Low-resistance and thermally-stable ohmic contact on p-type GaN usingPd/Ni metallization”
H. W. Jang, K. H. Kim, J. K. Kim, S.-W. Hwang, J. J. Yang, K. J. Lee, S.-J. Son, and J.-L. Lee
Applied Physics Letters 79, 1822 (2001)
“Ohmic contact formation mechanism of Ni on n-type 4H-SiC”
S. Y. Han, K. H. Kim, J. K. Kim, H. W. Jang, K. H. Lee, N.-K. Kim, E. D. Kim, and J.-L. Lee
Applied Physics Letters 79, 1816 (2001)
“Reduction of Ohmic contactResistivtiy on P-type GaN by surface Treatment”
J. K. Kim, H. W. Jang, C. M. Jeon, and J. L. Lee
Current Applied Physics 1, 385 (2001)
“Room temperature Ohmic contact on n-type GaN using plasma treatment"
H. W. Jang, C. M. Jeon, J. K. Kim, and J. L. Lee
MRS Internet Journal of Nitride Semiconductor Research 6, 8 (2001)
“Room-temperature ohmic contact on n-type GaN with surface treatment using Cl2inductively-coupled plasma”
H. W. Jang, C. M. Jeon, J. K. Kim, and J. L. Lee
Applied Physics Letters 78, 2015-2017 (2001)