Univ. of Tsukuba

Members

Ms. Chong Shao is an undergraduate student in Interdisciplinary Engineering at Univ. of Tsukuba. Her current research focuses on optical property of alpha-(AlGa)2O3.

Mr. Dae-Han Won is an undergraduate student at Univ. of Tsukuba. His current research focuses on the fabrication of p-type AlN used devices.

Mr. Jinfeng Hua received his B.S from the Univ. of Electro-Communications in 2025. His current research focuses on the evaluation of p-type AlN used devices.

Mr. Hibiki Kuriyama is an undergraduate student at Univ. of Tsukuba. His current research focuses on molecular-beam epitaxy growth of alpha-(AlGa)2O3.

Mr. Fuga Miyazawa received his B.S from Fukushima Univ. in 2024. His current research focuses on electrical property of p-type AlN.

Mr. Kota Nakano is a research collaborator in Sakurai group at Univ. of Tsukuba. His current research focuses on the fabrication of beta-(AlGa)2O3 diodes.

Mr. Tomoya Nakayama received his B.S from Toho Univ. in 2024. His current research focuses on the fabrication of beta-Ga2O3 fin field-effect transistors.

Mr. Yuta Okuyama received his B.S from Univ. of Tsukuba in 2025. His current research focuses on optical property of alpha-(AlGa)2O3.

Ms. Yui Sasaki is a research collaborator in Sakurai group at Univ. of Tsukuba. Her current research focuses on material property of p-type NiO. She won the department award in 2025.

Dr. Shun Ukita received his Ph.D from the Univ. of Electro-Communications in 2025. He is a post-doc researcher at Univ. of Tsukuba from 2025. Here, he works on metal-organic chemical vapor deposition (MOCVD) growth of beta-Ga2O3.

Mr. Keigo Urasaki received his B.S from Univ. of Tsukuba in 2025. His current research focuses on the fabrication of Cu(In, Ga)Se2 (CIGS) pixel radiation detectors.

We are always looking for motivated undergraduate and graduate students.

Alumni

Ms. Andrea Fassion was a research collaborator in Mannequin group at Univ. of Tsukuba and Univ. Grenoble Alpes between 2019 and 2020. She did research on crystal growth and etching of alpha-(AlGa)2O3 for low-loss optical waveguides at blue and near UV wavelengths. paper

Ms. Yuri Hayama received his B.S from Univ. of Tsukuba in 2023. She did research on the fabrication of vertical beta-(AlGa)2O3 (001) Schottky-barrier diodes with low loss. After that, she joined the Univ. of Tokyo as a graduate student.

Dr. Yun Jia received his Ph.D from Univ. of Tsukuba in 2025. He was a research collaborator in Traore group at Univ. of Tsukuba. He did research on defect evaluation in heterojunction between beta-(AlGa)2O3 and p-type oxide includng NiO and Cu2O. After that, he joined the Univ. of Tokyo as a post-doc researcher. paper

Dr. Riena Jinno received her Ph.D from Kyoto Univ. in 2020. She was a post-doc researcher at Univ. of Tsukuba between 2020 and 2021. Here, she worked on crystal growth and optical property of alpha-(AlGa)2O3 for vacuum UV emissions. After that, she joined the Univ. of Tokyo as an assistant professor. paper

Mr. Shunsuke Kitaoka received his B.S and M.S from Univ. of Tsukuba in 2020 and 2022, respectively. He did research on the fabrication and simulation of GaN bipolar-junction transistors for high-frequency applications.

Mr. Yuta Kurosaki received his B.S and M.S from Univ. of Tsukuba in 2019 and 2021, respectively. He did research on contact resistivity of n-type AlN field-effect transistors.

Mr. Lorenzo Mainini was an exchange student from Politecnico di Milano in 2024. He did research on the fabrication of fully vertical AlN Schottky-barrier diodes. paper

Mr. Ryo Morita was a research collaborator in Traore group at Univ. of Tsukuba in 2024. He did research on the fabrication and electrical property of beta-(AlGa)2O3 channel field-effect transistors for high-power applications.

Mr. Yohei Ogawara received his B.S from Univ. of Tsukuba in 2021. He did research on the fabrication of vertical GaN PiN diodes for radiation detectors. After that, he joined the Univ. of Tokyo as a graduate student. paper

Mr. Tsubasa Seo received his B.S from Gunma College, National Institute of Technology in 2023 and M.S from Univ. of Tsukuba in 2025. He learned vertical beta-Ga2O3 Schottky-barrier diodes with high breakdown voltages.

Mr. Kohei Tsuzuku received his B.S and M.S from Univ. of Tsukuba in 2023 and 2025, respectively. He did research on the nanofabrication and simulation of GaN topological-photonic crystal waveguides at visible wavelength. paper

Mr. Hiroshi Yamada received his B.S from Univ. of Tsukuba in 2022. He did research on the fabrication of AlN metal-oxide-semiconductor (MOS) structure. After that, he joined the Univ. of Tokyo as a graduate student.

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Prof. Hironori Okumura