Ms. Andrea Fassion was a research collaborator in Mannequin group at Univ. of Tsukuba and Univ. Grenoble Alpes between 2019 and 2020. She did research on molecular-beam epitaxy (MBE) growth and etching of alpha-(AlGa)2O3 for low-loss optical waveguides at blue and near UV wavelengths. paper
Ms. Yuri Hayama received her B.S from Univ. of Tsukuba in 2023. She did research on fabrication of fully vertical beta-(AlGa)2O3 (001) Schottky-barrier diodes (SBDs) with low loss. After that, she joined the Univ. of Tokyo as a graduate student.
Dr. Yun Jia received his Ph.D from Univ. of Tsukuba in 2025. He was a research collaborator in Traore group at Univ. of Tsukuba. He did research on defect evaluation in heterojunction between beta-(AlGa)2O3 (001) and p-type oxide includng NiO and Cu2O. After that, he joined the Univ. of Tokyo as a post-doc researcher. paper
Dr. Riena Jinno received her Ph.D from Kyoto Univ. in 2020. She was a post-doc researcher at Univ. of Tsukuba between 2020 and 2021. Here, she worked on MBE growth and optical property of alpha-(AlGa)2O3 for vacuum UV emissions. After that, she joined the Univ. of Tokyo as an assistant professor. paper
Mr. Shunsuke Kitaoka received his B.S and M.S from Univ. of Tsukuba in 2020 and 2022, respectively. He did research on simulation and fabrication of GaN bipolar-junction transistors (BJTs) for high-frequency applications.
Mr. Yuta Kurosaki received his B.S and M.S from Univ. of Tsukuba in 2019 and 2021, respectively. He did research on contact resistivity of n-type AlN and fabrication of AlN metal-semiconductor field-effect transistors (MESFETs).
Mr. Lorenzo Mainini was an exchange student from Dellasega group in Politecnico di Milano in 2024. He did research on the first demonstration of fully vertical AlN-on-SiC SBDs. paper
Mr. Fuga Miyazawa received his B.S from from Fukushima Univ. in 2024 and M.S from Univ. of Tsukuba in 2026. He did research on electrical characteristics of p-type AlN and the first demonstration of fully vertical AlN-on-SiC heterojunction p-n diodes (HJDs). paper
Mr. Ryo Morita was a research collaborator in Traore group at Univ. of Tsukuba in 2025. He did research on contact resistivity of beta-(AlGa)2O3 and fabrication of beta-(AlGa)2O3 (010) MESFETs.
Mr. Kota Nakano was a research collaborator in Traore group at Univ. of Tsukuba in 2026. He did research on fabrication of quasi-vertical beta-(AlGa)2O3 (010) SBDs after thermal annealing .
Mr. Yohei Ogawara received his B.S from Univ. of Tsukuba in 2021. He did research on fabrication of fully vertical GaN p-n diodes for particle detectors. After that, he joined the Univ. of Tokyo as a graduate student. paper
Mr. Tsubasa Seo received his B.S from Gunma College, National Institute of Technology in 2023 and M.S from Univ. of Tsukuba in 2025. He learned beta-Ga2O3 (001) SBDs.
Mr. Kohei Tsuzuku received his B.S and M.S from Univ. of Tsukuba in 2023 and 2025, respectively. He did research on nanofabrication and simulation of GaN topological-photonic crystal waveguides at visible wavelength. paper
Mr. Dae-Han Won received his B.S from Univ. of Tsukuba in 2026. He did research on fabrication of p-type AlN MESFETs for high-temperature circuits.
Mr. Hiroshi Yamada received his B.S from Univ. of Tsukuba in 2022. He did research on fabrication of n-type AlN metal-oxide-semiconductor field-effect transistors (MOSFETs). After that, he joined the Univ. of Tokyo as a graduate student.