Members

Mr. Lorenzo Mainini is a graduate student at Politecnico di Milano. His current research focuses on the fabrication of vertical AlN devices.

Mr. Fuga Miyazawa received his B.S from Fukushima University in 2024. His current research focuses on crystal growth and electrical property of p-type AlN. 

Mr. Tomoya Nakayama received his B.S from Toho University in 2024. His current research focuses on the fabrication of beta-Ga2O3 FinFETs.

Mr. Yuta Okuyama is an undergraduate student at Univ. of Tsukuba. His current research focuses on optical property of alpha-(AlGa)2O3.

Mr. Tsubasa Seo received his B.S from Gunma College, National Institute of Technology in 2023. His current research focuses on the fabrication of vertical beta-Ga2O3 Schottky-barrier diodes.

Mr. Kohei Tsuzuku received his B.S from Univ. of Tsukuba in 2023. His current research focuses on the fabrication of GaN topological-photonic crystals.

Mr. Keigo Urasaki is an undergraduate student at Univ. of Tsukuba. His current research focuses on the fabrication of CIGS pixel detectors. 

We are always looking for motivated undergraduate and graduate students.

Alumni

Ms. Andrea Fassion was a research collaborator in Mannequin group at Univ. of Tsukuba and Univ. Grenoble Alpes between 2019 and 2020. She did research on crystal growth and etching of alpha-(AlGa)2O3 for low-loss optical wave-guides at blue and near UV wavelengths. paper

Ms. Yuri Hayama received his B.S from Univ. of Tsukuba in 2023. She did research on the fabrication of vertical beta-(AlGa)2O3 (001) Schottky-barrier diodes with low loss. After that, she joined the Univ. of Tokyo as a graduate student.

Dr. Riena Jinno received her Ph.D from Kyoto Univ. in 2020.  She was a post-doc researcher at Univ. of Tsukuba between 2020 and 2021.  Here, she worked on crystal growth and optical property of alpha-(AlGa)2O3 for vacuum UV emissions. paper

Mr. Shunsuke Kitaoka received his B.S and M.S from Univ. of Tsukuba in 2020 and 2022, respectively. He did research on the fabrication and simulation of GaN bipolar-junction transistors for high-frequency applications.

Mr. Yuta Kurosaki received his B.S and M.S from Univ. of Tsukuba in 2019 and 2021, respectively. He did research on contact resistivity of n-type AlN devices for high-power applications.

Mr. Yohei Ogawara received his B.S from Univ. of Tsukuba in 2021. He did research on the fabrication of vertical GaN PiN diodes for radiation detectors. After that, he joined the Univ. of Tokyo as a graduate student. paper

Mr. Hiroshi Yamada received his B.S from Univ. of Tsukuba in 2022. He did research on the fabrication of AlN MOS structure for high-power applications. After that, he joined the Univ. of Tokyo as a graduate student.

Centers & Projects