Okumura Group

Our research activity aims at exploring novel devices based on ultra wide-bandgap semiconductors (GaN, AlN, Ga2O3, and Al2O3) for photonics and electronics. 

• Crystal growth and defect evaluation  

• High-temperature and high-power devices

• Particle detectors

News

• 2/1/24 Extreme-temperature devices using AlN 

• 9/11/23 Electrically conductive sapphire (Japanese)

• 6/30/23  Semiconductor Devices for High-Temperature Environments Exceeding 800°C 

Sponsored by

• The Japan Society for the Promotion of Science (JSPS) 

• New Energy and Industrial Technology Development Organization (NEDO)

• Tsukuba Innovation Arena "KAKEHASHI"