We have investigated wide-bandgap semiconductors (GaN, AlN, Ga2O3, and Al2O3) for photonics and electronics. Our current research interest is in the field of advanced electronic devices based on compound semiconductors and nanotechnology. We enjoy developing completely new semiconductor devices for advanced electronic and thermonic applications.
2019-2024: NEDO/Feasibility Study Program/Uncharted Territory Challenge 2050
Alpha, beta, kappa-Ga2O3 and Al2O3 single crystals.
Beta-Ga2O3 and AlN diodes and transistors.
GaN and CIGS particle pixel detectors.
Smart contact lens and lactate detection sensors.
These are a part of our projects. If you may have an interest in these or the other related topics, please send us an email. We can schedule a meeting where we will try to answer all your questions about our work. Thanks.
Google scholar and University of Tsukuba Repository (FREE)
Selected paper
H. Okumura, S. Iida, S. Hirose, K. Itabashi, M. Togawa, M. Miyahara, J. Nishinaga, M. Imura, K. Urasaki, T. Isobe, "GaN radiation detectors with LGAD structure", JJAP 65, 016501 (2026).
H. Okumura, R. Jinno, A. Uedono, M. Imura, "Optical and electrical properties of Si-implanted Al2O3", JJAP 60, 106502 (2021).
H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, Y. Zhang, D. Piedra, T. Palacios, "AlN MESFETs using Si+ implantation", JJAP 57, 04FR11 (2018).
H. Okumura, D. Martin, M. Malinverni, N. Grandjean, "Backward diodes using Mg-doped GaN growth by NH3 MBE", APL 108, 072102 (2016).
H. Okumura, M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, J. S. Speck, "β-Ga2O3 (010) growth by plasma MBE", APEX 7, 095501 (2014).
Standard model (PASCAL)
Temperature: 300-1100 K
Pressure: 5e-7 Pa (Pfeiffer, HiPace700 TC400)
Sample size: 10 mm x 10 mm
Cell: plasma oxide (ARIOS, IRFS-503), SnO2 (or SiO2), Al, Ga (Eiko, MB-3000)
Option: RHEED (Vacuum products, AHR-100), pyrometer (Japan sensor, FTK6Y), Nude ion gauge (ARIOS, BFM-2F01), QMS (ULVAC, CGM-052) , Spectrometer (Ocean optics, USB2000+)
Software: Lab view, Spectra suite
GOY-1035 (GII techno)
iE model (Riko International)
Temperature: 300-1200 K (Lake Shore, Model 335)
Sample size: 20 mm x 20 mm
Magnification: 26-200x (Carton, SPZ-50D-GS-260)
Connector: TRIAX
Max. voltage: 210 V (Keysight, B2902B)
Max. frequency : 1 MHz (Keysight, E4980AL/102)
Xenon lamp (Asahi Spectra, MAX-350) with seven filters (254, 270, 290, 310, 330, 350, 370 nm)
Air compressor (Hitachi, LE & EDT-100)
Thermometer (TESTO, 872)
Software: B2900 quick IV, Sunrise
VHT (Toyo corporation)
Temperature: RT-1000K (Lake Shore, Model 336)
Sample size: 10 mm x 10 mm
Resistance: 0.01~10M Ω (Lake Shore, M91)
Power supply: DC (AMETEK, DLM300-2)
Magnet: 0.567 T, permanent (MAG-WEISSS-3)
Pressure: 5e-4 Pa (Pfeiffer, DRYTEL-1025C, PKR361-NW25, TPG361) with vibration isolator (Meiritz, AVT0405S)
Water chiller: 287 K (EYELA, CA-1115B)
Software: MeasureLINK
KV-202PN (Bunkoukeiki)
Laser: 473 nm Solid State with 75 mW CW & 150 MHz pulse (Coherent, Obis)
Sample temperature: 4-300 K (Oxford, OptistatCF)
Focal length: 320 mm (Jobin Yvon-SPEX, Triax320)
Diffraction grating: 1200 gr/mm for 250 nm, 1200 gr/mm for 750 nm, & 600 gr/mm for 1500 nm
Detector: Multialkali PMT (Hamamatsu, R2949, C9525-02), Photo diode with Amp (SIGMAKOKI, PDA-1), CCD (Ocean Photonics, FRAME-T(200-850 nm))
Photon counter (SRS, SR400)
Pulse delay generator (SRS, DG535)
Oscilloscope (Tektronix, TDS220)
Crystal structure (HULINKS, CrystalMaker, SingleCrystal, and CrystalDiffract)
Graph (LightStone, Origin)
FDTD (Ansys Lumerical, Ansys)
Institute of High Pressure Physics (UNIPRESS)