Lecture movie
Lecture movie
Semiconductors for optoelectronics and quantum applications
Wide-bandgap semiconductors, Advanced course
Lecture document
Lecture document
Solid State Physics 2
Semiconductors for optoelectronics and quantum applications
Wide-bandgap semiconductors, Advanced course
Solid State Physics 2
Linear algebra (III)
Introduction of advanced science
Solid State Physics (II)
Ultra-wide bandgap semiconductors
What challenges or applications are beyond the capabilities of Si, SiC, and GaN? Can AlGaN or (AlGa)₂O₃ address the challenges?
If not, what is limitation?
If so, what is needed to demonstrate their potential for practical applications?
Based on your group discussion, discuss your own perspective on the potential of AlGaN or (AlGa)₂O₃ to address the identified challenges and the key technical challenges that must be overcome, using the semiconductor physics concepts covered in the lecture.
First year seminar
Linear algebra (III)
Introduction of advanced science
Solid State Physics (II)
Ultra-wide bandgap semiconductors
Assignment: "Summarize the discussion within your group on whether practical devices (LEDs, FETs, or quantum sensors) can be fabricated using ultra-wide-bandgap semiconductors (diamond, AlGaN, or (AlGa)₂O₃). In addition, describe the major challenges encountered in the fabrication of these devices. Explain the origin of these challenges using physics, and propose possible methods to overcome them."
Linear algebra (III)
Introduction of advanced science
Solid State Physics (II)
Semiconductors for optoelectronics and quantum applications (II)
Linear algebra (III)
Solid State Physics (II)
Semiconductors for optoelectronics and quantum applications (II)
Solid State Physics (II)
Semiconductors for optoelectronics and quantum applications (II)
Assignment: "Explain the difference between acoustic and optical type phonons. For wide bandgap semiconductors such as GaN and SiC, explain the role of phonons in electron-hole recombination. Additionally, discuss the phonons-related electron scattering mechanisms in GaN and SiC materials. "
Assignment: "Explain the high electric field electron transport considering the field dependency of electron drift-velocity and mobility, and the drift-velocity saturation due to phonons scattering. Additionally, discuss the saturation drift-velocity for wide bandgap semiconductors."
Solid State Physics (B): Introduction video is here
Assignment: "Explain Avalanche breakdown using the idea of multiplication coefficient. Additionally, write on the relation between the breakdown mechanism and band-gap energy. "
Assignment: "Explain current transport processes at metal / semiconductor junction. Additionally, propose the way to achieve Ohmic characteristics for the semiconductors with very small electron affinity. "
GD Topic (1): "How can we keep the balance between seniority-wage pay system and performance pay system?"
GD Topic (2): "How can we solve the issues of Energy and Aging population using the knowledge and technology of science?"
Assignment: "Explain Avalanche breakdown using the idea of multiplication coefficient. Additionally, write on the relation between the breakdown mechanism and band-gap energy. "