Our research activity aims at exploring novel devices based on ultra wide-bandgap semiconductors (GaN, AlN, Ga2O3, and Al2O3) for photonics and electronics. 

• Crystal growth and defect evaluation  

• High-temperature, high-power, and radiation-tolerance devices

• Quantum physics

News

• 2/1/24 Extreme-temperature devices using AlN 

• 9/11/23 Electrically conductive sapphire (Japanese)

• 6/30/23  Semiconductor Devices for High-Temperature Environments Exceeding 800°C 

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