Layered Materials and Device Physics Laboratory
Department of Physics, Jackson State University
Left to right: Sanvenia Johnson, Brian Shook, Elienae Nieves, Sumit Bera & Rukshan Thantirige
Welcome to Layered Materials and Device Physics group at Jackson State University. We are interested in understanding basic physics of Low dimensional materials and how we can use them for potential technological applications in electronics, optoelectronics, spintronics and energy generation. Several layered materials recently been in exploration for their fundamental properties as well as application in technological avenue. Some of these layered compounds are listed in the figure right side called Transition metal dichalcogenides (TMDs), Transition metal monochalcogenides (TMMs), Transition metal trichalcogenides (TMTs), Transition metal thiophosphates and h-BN. Graphene is well known for its two-dimensional properties with zero band gap where TMDs have natural bandgaps from 0.8 - 3eV. Recently black phosphorus (BP) shows promising electrical and optical properties due to its tunable bandgaps ranges from 0.3 - 2eV, which bridges the gap between graphene and TMDs.
Family of 2D Materials
Our Lab is located at ground floor of Science Hall. We have the capability of synthesizing single crystal materials and doing electrical measurements such as transport properties of FETs at room temperature and optical properties such as photoconductivity, photovoltaics. We have Atomic Force Microscope facility to study the morphology of sample.
Jackson State University, Jackson, MS
We fabricate the tiny Field-effect transistor (FET) devices of single-to-few atomic layers of layered materials using nano-fabrication techniques at Center for Nanoscale Materials (CNM), Argonne National Lab. We also use the sophisticated experimental facilities available at National High Magnetic Field Laboratory for measurements at low temperature and high magnetic field. Our aim is to investigate these layered single crystal for potential technological applications when the thickness of these materials decreases to single or few-atomic layers form or when quantum confinement effect emerges.
National High magnetic Field Lab, Tallahassee, FL
