Open Position

MS/PhD Student Positions
College of Semiconductor Research, National Tsing Hua University, Taiwan
Start Date: Fall 2025 or Spring 2026
Duration: 1.5 – 2 Years for MS and 2.5-3.5 Years 

We seek two Master’s students to join our research team at the College of Semiconductor Research, National Tsing Hua University. The successful candidates will work closely with PhD scholar Deepanshi Bhatnagar and Dr. Gautham Kumar under the guidance of Prof. Sourav De, focusing on ferroelectric thin films and related devices. Each position will have a distinct focus—one on FeFET (Ferroelectric Field-Effect Transistor) device fabrication and the other on materials-based capacitor fabrication and analysis.

FeFET Fabrication

Research Overview

1. Work on ferroelectric field-effect transistors (FeFETs) and related capacitor test structures (MFM, MFIS).
   
   

2. Study the role of electrode work functions, interfacial layers, and oxygen vacancy distribution in modulating wake-up effects, switching dynamics, and data retention.
   
   

3. Perform cleanroom fabrication, pulse-based electrical characterization, and hysteresis/ICP/QCP-based defect analysis.
   
   

4. Collaborate with team members on TCAD and SPICE modeling of ferroelectric switching and trap dynamics.

Benefits

• Co-authorship on high-impact scientific publications.

• Hands-on experience with state-of-the-art semiconductor fabrication and characterization techniques.

• Mentorship from experienced researchers, with the possibility of pursuing PhD studies afterward.
  
  

Application Instructions

Interested candidates should submit the following to Dr. Gautham Kumar (gautham@mx.nthu.edu.tw), and CC Prof. Sourav De (sourav.de@mx.nthu.edu.tw):

Curriculum Vitae (CV)
Brief Statement of Research Interests

For further information about the project or application process, please contact the daily advisors (Dr. Gautham) via email. We look forward to your applications and the opportunity to work together on cutting-edge ferroelectric research.