Wind Band Gap Semiconductor

We perform thin film growth and characterization of homoepitaxial and heteroepitaxial layers of Wide Band Gap (WBG) Semiconductor for applications in electronic devices that can operate at extreme conditions. Growth methods include Molecular Beam Epitaxy (MBE) and Pulsed Laser Deposition (PLD)

Our group applies high throughput experimental methods to thin film transistors (TFTs), including combinatorial channel layer growth, device fabrication, and semi-automated characterization. This allows for both extrinsic and intrinsic device gradients to be generated in a TFT library, for example channel thickness, width, or composition.

We also collaboration with several modeling groups on predicting new Ultra Wide Band Gap (UWBG) Semiconductors, simulating the expected device performance, and evaluating their future cost reduction potential