Research

Impact of Novel Gate Dielectric Material Lanthanum Doped Zirconium Oxide (LaZrO2) on FD SOI
(April 2024 - September 2024)

Supervisor: Safayat-Al Imam
Assistant Professor, Department of Electrical and Electronic Engineering, Ahsanullah University of Science and Technology.

Summary: The research aims to examine the impact of incorporating lanthanum-doped zirconium oxide (LaZrO2) as a gate dielectric material in 28 nm FD SOI technology, intending to enhance effective carrier mobility and mitigate short-channel effects.
Tools: MATLAB, SILCAVO TCAD ATLAS, Origin, Overleaf

The Role of High-K Dielectric Materials for optimizing FD SOI MOSFETs' Performance
(January 2023 - November 2023)

Supervisor: Safayat-Al Imam
Assistant Professor, Department of Electrical and Electronic Engineering, Ahsanullah University of Science and Technology.

Summary: The research is based on the electrical behaviour of FD SOI MOSFET using various high-k dielectric materials as gate oxide in order to study the influence of gate dielectric materials on the ground of logic performance characteristics. Besides, a comparative study of performance parameters is carried out among the high-K dielectric materials.
Tools: MATLAB, SILCAVO TCAD ATLAS, Origin, Overleaf

Enhancing DG MOSFET and FD SOI MOSFETs’ Characteristics through Doping Modifications
(June 2022 - November 2022)

Supervisor: Safayat-Al Imam
Assistant Professor, Department of Electrical and Electronic Engineering, Ahsanullah University of Science and Technology.

Summary: Analyzed how modifying channel and source/drain doping affect the performance characteristics of FD SOI and DG MOSFET in order to improve their device design parameters. Several electrical properties were, furthermore, compared between the devices. The findings indicate that DG MOSFET has a higher Ion/Ioff ratio of about 110.84%, nearly 93.75% of lower leakage current, and improved Sub-threshold swing of almost 97%. Besides, 2X1020 cm−3 of S/D doping and 8.50X1018 cm−3 of substrate doping are regarded as the best doses for this study since they have the highest Ion to Ioff ratio and minimum leakage current values because a better ratio with small Ioff can make a sublime device. The analysis also included the investigation of the electric field and energy band diagram for both devices.
Tools: MATLAB, SILCAVO TCAD ATLAS, Overleaf

Figure: Electric Field and Energy Band Diagram of DG MOSFET and FD SOI

Study the operation of silicon on insulator devices, Undergraduate Thesis
(July 2021 - May 2022)

Supervisor: Dr. Towhid Adnan Choudhury
Assistant Professor, Department of Electrical and Electronic Engineering, Ahsanullah University of Science and Technology.

Summary: The aim of this research is to create a design simulation model for SOI devices and to investigate the different properties of SOI devices by varying the doping concentrations in the channel, drain, and source. In addition, we alter the silicon film thickness based on the type of SOI and acknowledge the electrical parameters. The doping concentration is varied to find the best doping profile. Lower the substrate doping concentration, higher the drain current, and reduce the threshold voltage, which provides better mobility and, hence, less velocity saturation, according to the findings. Thinning the silicon film, moreover, enhances the electrostatic control of the channel gate, resulting in a decrease in threshold voltage. The kink will be reduced as a result of this. Last but not least, a better saturation region is provided by a higher drain current and a lower drain doping concentration.
Tools: SILCAVO TCAD ATLAS

After the thesis presentation, I, together with the other group members, was cherishing the moment of ending undergraduate life with our supervisor.

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