Peer-reviewed Journal Paper
L. Tabashum, C. Dormena et. al, “Equivalent-Circuit Model for Single/Few-SWCNT Devices: Toward Sensing Applications.” To be Submitted
International Conference Proceedings
i. L. Tabashum, Z. Ebrahim, and S. -A. Imam, A Comparative Analysis of High-k Gate Dielectrics on 30nm Fully Depleted Silicon on Insulator (FD SOI) MOSFET and NMOS Devices, 6th International Conference on Electrical Information and Communication Technology (EICT), pp. 1-6, 2023, IEEE.
DOI: 10.1109/EICT61409.2023.10427610.
ii. L. Tabashum, M. S. B. Hossain and S. -A. Imam, Enhanced comparative performance analysis of Double Gate (DG) MOSFET over Fully Depleted Silicon on Insulator (FD-SOI) MOSFET, 4th International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE), pp. 110-114, 2022, IEEE.
DOI: 10.1109/ICECTE57896.2022.10114559.