Peer-reviewed Journal Paper
L. Tabashum, Z. Ebrahim, and S. -A. Imam, Development of the electrical properties of a Fully Depleted (FD) Silicon on Insulator (SOI) transistor incorporating dielectric engineering, Semiconductor Science and Technology. (Ready for submission)
International Conference Proceedings
i. L. Tabashum, Z. Ebrahim, and S. -A. Imam, A Comparative Analysis of High-k Gate Dielectrics on 30nm Fully Depleted Silicon on Insulator (FD SOI) MOSFET and NMOS Devices, 6th International Conference on Electrical Information and Communication Technology (EICT), pp. 1-6, 2023, IEEE.
DOI: 10.1109/EICT61409.2023.10427610.
ii. L. Tabashum, M. S. B. Hossain and S. -A. Imam, Enhanced comparative performance analysis of Double Gate (DG) MOSFET over Fully Depleted Silicon on Insulator (FD-SOI) MOSFET, 4th International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE), pp. 110-114, 2022, IEEE.
DOI: 10.1109/ICECTE57896.2022.10114559.
iii. L. Tabashum, Z. Ibrahim, NR Niloy, and S. -A. Imam, "Effect of Lanthanum Doped Zirconium Oxide (LaZrO2) as Gate Dielectric Material and Channel Length on Fully Depleted Silicon on Insulator (FD-SOI) MOSFET to Evaluate the Device Performance" (Ready for submission)