Presentation

A Comparative Analysis of High-k Gate Dielectrics on 30nm Fully Depleted Silicon on Insulator (FD SOI) MOSFET and NMOS Devices

6th International Conference on Electrical Information and Communication Technology (EICT),
Dec 07 - 09, 2023

Details: This research evaluates the performance of 30nm FD SOI MOSFET and NMOS devices by examining the effects of various high-k dielectrics as gate oxides through the utilization of 2-dimensional simulation software, SILVACO TCAD.

Enhanced comparative performance analysis of Double Gate (DG) MOSFET over Fully Depleted Silicon on Insulator (FD-SOI) MOSFET

4th International Conference on Electrical, Computer Telecommunication Engineering (ICECTE),
Dec 29 - 31, 2022

Details: Presented my findings regarding the impact of varying channel and source/drain doping concentrations on the electrical properties such as threshold voltage, sub-threshold swing, leakage current, drive current, and Ion/Ioff ratio of FD SOI and DG MOSFET by SILVACO TCAD software. At the presentation, comparative data and graphs were also displayed. 

Study the operation of silicon on insulator devices
Ahsanullah University of Science And Technology
May, 2022