1. R. Y. He, K. T. Chen, C. F. Lee, and S. T. Chang, "Detection of Charged Proteins with a Bio-Sensor DeviceUsing a Semiconductor-on-Insulator Structure," J. Nanosci.Nanotechnol., Vol. 17, pp.8506-8510, 2017
2. K. T. Chen, C. F. Lee, R. Y. He, and S. T. Chang, "A Stress Response Model for Hole Mobility in theInversion Layer of Ge MOSFETs," J. Nanosci. Nanotechnol., Vol. 17,pp.8511-8515, 2017
3. K. T. Chen, R. Y. He, C. F. Lee, M. T. Wu, and S. T. Chang, "Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band Structure," J. Nanosci. Nanotechnol., Vol. 17 , pp. 8516-8521, 2017
4. H. S. Lan, S. T. Chang, and C.W. Liu, “Semiconductor, topological semimetal, indirect semimetal, andtopological Dirac semimetal phases of Ge1?xSnx alloys,” Physical Review B, Vol. 95, p. 201201(R), 2017.
5. S. T. Chang, J. W. Fan, C. Y.Lin, T. C. Cho, M.Huang,“Hole Effective Masses of PMOS Inversion Layer in Strained Si1-xGexAlloys Channel on (110) and (111) Si Substrates,” Vol.111 pp.033712,2012.
6. S. T. Chang , B. F. Hsieh, Y. C.Liu, "A simulation study of thin film tandem solar cells with ananoplate absorber bottom cell," Vol.520 pp.3369-3373, 2012.
7. M. H. Lee, S. T. Chang, B. F.Hsieh, J. J. Huang, and C. C. Lee, “ Analysis and Modeling ofNano-Crystalline Silicon TFTs on Flexible Substrate with MechanicalStrain,” J. Nanosci. Nanotechnol, Vol.11,pp.10485-10488, 2011. (Impact Factor 1.351, 94/222)
8. M. H. Lee, S. T. Chang, T. H.Wu, W. N. Tseng, “Driving Current Enhancement of Strained Ge (110)p-type Tunnel FETs and Anisotropic Effect,” IEEE Electron DeviceLetters, Vol. 32, pp.1355-1357 , 2011 (Impact factor 2.714, 14/247)
9. M. H. Lee, B. F. Hsieh, T. H. Wu, S. T. Chang, “P-type Tunneling Field Effect Transistors on (100) and(110) Orientation Si Substrates,” Japanese Journal of Applied Physics,Vol.50, pp.10PC01-10PC01-3, 2011. (Impact factor 1.018, 75/116)
10. S. T. Chang, C. C. Lee, P. H.Sun, “Technology computer-aided design simulation study for a strainedInGaAs channel n-type metal-oxide-semiconductor field-effecttransistor with a high-k dielectric oxide layer and a metalgate electrode,” Journal of Vacuum Science and Technology B, vol.29,pp.032203-1-5, 2011.(Impact factor 1.268, 97/247)
11. B. F. Hsieh and S. T. Chang,“Subband Structure and Effective Mass of Relaxedand Strained Ge (110) PMOSFETs,” Solid-State Electronics, Vol.60,pp.37-41, 2011. (Impact factor 1.438, 79/247)
12. M. H. Lee,S. T. Chang, S.Maikap, C. Y. Peng, and C. H Lee, “High Ge Content of SiGe Channelp-MOSFETs on Si (110) Surfaces,” IEEE Electron Device Letters, Vol. 31,pp.141-143 , 2010 (Impact factor 2.714, 14/247)
13. M. H. Lee,S. T. Chang, C. C.Lee,J. J. Huang, G. R. Hu,Y. S. Huang, “The Gap State Density ofMicro/Nano-Crystalline Silicon Active Layer on Flexible Substrate,”Thin Solid Films, Vol.518, pp.S246-S249 January 2010.(Impact factor1.909, 3/18)
14. M. Tang,S. T. Chang, T. C.Chen, Z. Pei, W. C. Wang and Jacky Huang, “ Simulation Studyon Nanorod Structure for Amorphous Silicon-based Solar Cell,”Thin SolidFilms Vol.518, pp.S259-S261 January 2010.(Impact factor 1.909, 3/18)
15. S. T. Chang, M. Tang,R. Y. He,C. W.Wang, Z. Pei, C. Y. Kung, “TCAD Simulation of Hydrogenatedamorphous silicon-carbon/ microcrystalline-silicon/ hydrogenatedamorphous silicon-germanium PIN Solar Cells," Thin Solid Films,Vol.518, pp.S250-S254 January 2010.(Impact factor 1.909, 3/18)
16. S. T. Chang, Jacky Huang, M.Tang, C. Y. Lin, “Effective Mass and Subband Structure of StrainedSi in PMOS Inversion Layer with External Stress," Thin Solid Films,Vol.518, pp.S154-S158 January 2010.(Impact factor 1.909, 3/18)
17. Z. Pei,S. T. Chang, C. W. Liu,Y.C. Chen, “Numerical Simulation on the Photovoltaic Behavior of anAmorphous Silicon Nanowire Array Solar Cell,” IEEE Electron DeviceLetters, vol. 30, pp. 1305-1307, 2009. (Impact factor 2.714, 14/247)
18. S. T. Chang,W. C.Wang, and W. K. Lin, “Light emission from high-k dielectricscontaining Ge nanocrystals,” Thin Solid Films, Vol.517, pp.5070-5074,2009. (Impact factor 1.666, 3/18)
19. S. T. Chang,“Strain Effect and Surface Orientation on Drive Current Enhancement ofBallistic Germanium n-Channel Metal-Oxide-SemiconductorField-Effect-Transistors,” Japanese Journal of Applied Physics, Vol.47,pp.5345-5351, 2008. (Impact factor 1.018, 75/116, NSC96-2221-E-005-092-)
20. S. T. Chang, S. H. Liao, W. C. Wang,Chung-Yi Lin, Jun-Wei Fan, “Impact of Stress Engineering on ElectronMobility and Ballistic Current for Strained Si NMOSFETs,” Journal ofthe Korean Physical Society, Vol.53, pp.1024-1029, 2008. (Impact factor0.476, 62/80, NSC 96-2221-E-005-092-)
21. S.T. Chang, S. H. Liao, C. Y. Lin, “The impactof uniaxial stress on subband structure and mobility of strain SiNMOSFETs,” Thin Solid Films, Vol.517, pp.356-358, 2008. (Impact factor 1.909, 3/18, NSC 96-2221-E-005-092-)
22. S. T. Chang, C. Y. Lin, S. H. Liao,“Theoretical Study of Electron Mobility for Silicon-Carbon Alloys,”Applied Surface Science, Vol.254, pp.6203-6207, 2008. (Impact factor 1.793, 7/18, 40/116, NSC 96-2221-E-005-092-)
23. B. C. Hsu, C. H. Lin,P. S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu, J. –H.Lu, and C. H. Kuan, “Novel MIS Ge-Si Quantum Dot InfraredPhotodetectors,” IEEE Electron Device Lett., Vol.25, pp.544-546, 2004.(Impact factor 2.714, 14/247)
24. S. T. Chang,K. F. Chen, C. R. Shie, C. W. Liu, M. J. Chen, and C. F. Lin, “Theband-edge light emission from the metal-oxide-silicon tunneling diodeon (110) substrates,” Solid State Electronics, Vol.46, No.8,pp.1113-1116, 2002. (Impact factor 1.438, 79/247)
Selected IEDM paper
B. C. Hsu,S. T. Chang,C. R. Shie, C. C. Lai, P. S. Chen and C. W. Liu,“ High Efficient 820 nmMOS Ge Quantum Dot Photodetectors for Short-Reach Integrated OpticalReceivers with 1300 and 1550 nm Sensitivity,”International ElectronDevices Meeting (IEDM), pp.91-94, 2002. (San Francisco,USA)
S. Maikap, M. H. Liao, F.Yuana, M. H. Lee, C. F. Huang,S. T. Chang,and C. W.Liu,“ Package-strain-enhanced device and circuitperformance,”International Electron Devices Meeting (IEDM), pp.233-236,2004. (San Francisco,USA)
M. H. Liao, C. Y. Yu, C. F.Huang, C. H. Lin, C. J. Lee, M. H. Yu,S. T. Chang,C. Y. Liang, C. Y. Lee, T. H. Guo, C. C. Chang, and C. W. Liu,“ 2 μmemission from Si/Ge heterojunction LED and up to 1.55 μm detection byGOI detectors with strain-enhanced features,”International ElectronDevices Meeting (IEDM), pp.4 pp.-1004, 2005. (Washington,USA)
M. H. Lee, K. Y. Ho, P. C. Chen, C. C. Cheng,S.T. Chang, M. Tang, M. H. Liao and Y. H. Yeh,“ Promising a-Si:HTFTs with High Mechanical Reliability for FlexibleDisplay,”International Electron Devices Meeting (IEDM), pp.1-4, 2006.(San Francisco,USA)
M. H. Lee, P. G. Chen, S. T.Fan, Y. C. Chou, C. Y. Kuo, C. H. Tang, H. H. Chen, S. S. Gu, R. C.Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, K. T. Chen,S. T. Chang,M. H. Liao, K. S. Li and C. W. Liu,“ Ferroelectric Al:HfO2 NegativeCapacitance FETs,”International Electron Devices Meeting (IEDM),pp.565-568, 2017. (San Francisco,USA)
M. H. Lee, K. T. Chen,C. Y. Liao, G. Y. Siang, C. Lo, H. Y. Chen, Y. J. Tseng,C. Y. Chueh, C. Chang, Y. Y. Lin, Y. J. Yang, F. C. Hsieh,S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu,"Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltageand High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs", IEDM 2019.(Washington,USA)
Selected TW Patents
I307959 Combined structure of symmetric N-/P-metal-insulator-semiconductor field effect transistor and manufacturing method thereof,
[ 21/03/2009 - 11/04/2026 ]
I231994 Strained Si FinFET, [ 01/05/2005 - 03/04/2023 ]
I610455 Method of Heterojunction with Intrinsic Thin Layer Solar Cell, [ 01/01/2018 - 29/12/2036 ]
M585987 Semiconductor Device, [ 01/11/2019 - 24/04/2029 ]