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♕ NTNU, NTU, and NCHU collaborative research team contributed a paper with the title of Ferroelectric Al:HfO2 Negative Capacitance FETs and this paper had published in the proceeding of IEDM 2017
♕ NTNU, NTU, TSRI and NCHU collaborative research team contributed a paper with the title of Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltageand High Speed Response of Ferroelectric - AntiFerroelectric Hf0.25Zr0.75O Negative Capacitance FETs and this paper had published in the proceeding of IEDM 2019
♕ NCHU and NTNU collaborative research team contributed a TW patent with the title of Semiconductor Device and this patent was issued from 2019 to 2029