General Information

Scope

A. Compound semiconductor materials and devices

(化合物半導體材料與元件)

Material growth, high-speed devices, lasers, light-emitting diodes, photodetectors and organic electronics, power devices, associated characterization, modeling, simulation and reliability.

B. Novel materials, large-area electronics, and related applications

(新穎材料、大面積元件、感測與應用)

Material preparation, thin-film transistors, 2D semiconductor devices, thermoelectric devices, associated characterization, modeling, simulation and reliability.

C. Si-based processing, devices and integration

(矽基材料、元件與製程整合)

Novel processes and devices (Si, SiGe, Ge), low power ICs, high-voltage devices, optoelectronic ICs, memories, 3D ICs and integration, associated characterization, modeling, simulation and reliability.

D. Photonic and photovoltaic materials/devices, novel device concepts and applications

(光電與光伏材料、元件與應用)

Novel nanostructures, energy-conversion devices, solar cells, spintronics, MEMS, sensor materials and devices, associated characterization, modeling, simulation and reliability.