SiC Examples
01: SiC Extended Precision PiN Diode simulation
02: Anisotropic Mobility Characteristics of a SiC T-MOSFET
03: Anisotropic Mobility Characteristics of a SiC DMOS Device
04: Aluminium Implant into 6H-SiC.
05: Al implant in 4H-SiC in [0001] Crystallographic Direction.
06: Al implant in 4H-SiC in [11-23] Crystallographic Direction.
07: Enhancement Mode IEMOSFET I-V and Breakdown Curves
10: 3D Trench Shape Effect on IV and BV Characteristics
11: Comparison Between 2D and 3D BV Simulation
12: 4H-SiC Schottky Diode DLTS simulation
13: An alternative inversion layer mobility model for 4H-SiC
14: Reverse I-V of SiC Schottky and Junction Barrier Schottky (JBS) Diodes