Device Modeling, Wide-Band Gap Semiconductors, Power Electronics, Electric Vehicles, and Renewable Energy Technology
A. S. M. K. Hasan, M. M. Hossain, M. Z. Islam, M. M. Islam, S. Ahmed, and H. A. Mantooth ''Temperature Scaling and C-V Modeling of SiC Low-Voltage MOSFETs for IC Design", IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024
X. Du, A. Ismail, E. Allee, A. S. M. K. Hasan, X. Li, A. Kumar, K. Olejniczak et al. “Impact of 6.5 kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range”, in IEEE Transactions on Power Electronics, vol. 39, no. 12, pp. 15430-15435, Dec. 2024, doi: 10.1109/TPEL.2024.3444738.
H. Wang, P. Lai, M. Z. Islam, A. S. M. K. Hasan, A. D. Mauro, R. Russell, Z. Feng et al. "A review of silicon carbide CMOS technology for harsh environments." Materials Science in Semiconductor Processing 178 (2024): 108422.
A. S. M. K. Hasan, M. M. Hossain and H. A. Mantooth, Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region. International Conference on Applied Power Electronics Conference and Exposition (APEC), 2024
A. S. M. K. Hasan, M. Z. Islam, N. Vail, J. Venker, M. M. Hossain and H. A. Mantooth, Threshold Voltage Extraction Method for Low Voltage SiC MOSFETs at High-Temperature. International Conference on Energy Conversion Congress and Exposition (ECCE), 2023
A. S. M. K. Hasan, M. M. Hossain and H. A. Mantooth, A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling. International Conference on Energy Conversion Congress and Exposition (ECCE), 2022
A. S. M. K. Hasan, I. Bhogaraju, M. Farasat, and M. Malisoff, Lyapunov Function-Based Stabilizing Control Scheme for Wireless Power Transfer Systems with LCC Compensation Network. International Conference on Applied Power Electronics Conference and Exposition (APEC), 2021
M. M. Hossain, K. Shein, A. S. M. K. Hasan, Y. Wei and H. A. Mantooth, “Deep Cryogenic Characterization of GaN HEMT at 4K” 2023 AIAA/IEEE Electric Aircraft Technologies Symposium (EATS).