I view engineering as a discipline that not only advances technology but also improves lives. I strive to work with a logical and determined mindset, contributing to solutions that alleviate human suffering and uphold rigor, discipline, and integrity. Currently, I am working in the Device Modeling Group under Prof. H. Alan Mantooth, focusing on ultra-wide bandgap (UWBG) gallium oxide (Ga2O3) power MOSFETs and Schottky barrier diodes (SBDs), along with complementary work on silicon carbide (SiC) devices. For grid-connected power electronics applications, there is a critical need for power switches that can operate reliably at high voltage, elevated temperatures, and high switching frequencies. Devices realized using WBG and UWBG materials such as SiC and Ga2O3 offer superior performance compared to conventional silicon devices due to their intrinsic material advantages. One major barrier to the widespread adoption of these WBG/UWBG devices in circuit design is the availability of high-fidelity compact models for circuit simulation. My current research addresses this gap by developing physics-based compact models for Ga2O3 MOSFETs and SBDs, enabling accurate performance prediction and circuit-level adoption of these next-generation power devices.