Journals

[1] A. S. M. K. Hasan, M. M. Hossain, M. M. Islam, A. A. Jalal, M. D. Rahman, and H. A. Mantooth, ''Compact Modeling of β-Ga2O3 Depletion Mode Lateral MOSFET", in IEEE Electron Device Letters, doi: 10.1109/LED.2025.3639367.

[2] A. S. M. K. Hasan, M. M. Hossain, M. Z. Islam, M. M. Islam, S. Ahmed and H. Alan Mantooth, "Temperature Scaling and C-V Modeling of SiC Low-Voltage MOSFETs for IC Design," in IEEE Journal of Emerging and Selected Topics in Power Electronics,  vol. 13, no. 1, pp. 335-347, Feb. 2025, doi: 10.1109/JESTPE.2024.3482971.

[3] X. Du, A. Ismail, E. Allee, A. S. M. K. Hasan, X. Li, A. Kumar, K. Olejniczak et al. “Impact of 6.5 kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range,” in IEEE Transactions on Power Electronics, vol. 39, no. 12, pp. 15430-15435, Dec. 2024, doi: 10.1109/TPEL.2024.3444738.

[4] Z. Feng, P. Lai, A. S. M. K. Hasan, F. Fatani, A. Alaeddini, L. Huang, Z. Chen, and Q. Li, “A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability,” Material, vol. 19, no. 2, Dec. 2025, doi: 10.3390/ma19020228.

[5] H. Wang, P. Lai, M. Z. Islam, A. S. M. K. Hasan, A. D. Mauro, R. Russell, Z. Feng et al. "A review of silicon carbide CMOS technology for harsh environments," Materials Science in Semiconductor Processing, vol. 178, pp. 108422, Aug. 2024, doi.org/10.1016/j.mssp.2024.108422

[6] D. Chowdhury, A. S. M. K. Hasan and M. Z. R. Khan, “Islanded DC Microgrid Architecture with Dual Active Bridge Converter-Based Power Management Units and Time Slot-Based Control Interface,” IEEJ Transactions on Electrical and Electronic Engineering, vol. 15, no. 6, pp. 863-871, Mar. 2020, doi.org/10.1002/tee.23128

[7] M. Hasan, D. Chowdhury and A. S. M. K. Hasan, “Statistical Features Extraction and Performance Analysis of Supervised Classifiers for Non-Intrusive Load Monitoring,” Engineering Letters, vol. 27, no. 4, pp.776-782, Dec. 2019.

[8] M. D. Rahman, A. S. M. K. Hasan, H. A. Mantooth, and X. Song, “Thermal Management Strategies for Gallium Oxide Power Modules: Finite Element Analysis and Phase Change Material Integration", in IEEE Canadian Journal of Electrical and Computer Engineering, 2025. (Submitted Journal Paper)

[9] M. D. Rahman, A. S. M. K. Hasan, H. Rehman, H. A. Mantooth, and X. Song, “Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module", in IEEE Transactions on Components, Packaging and Manufacturing Technology, 2025. (Submitted Journal Paper)

Conference Papers

[10] A. S. M. K. Hasan, M. D. Rahaman, M. M. Islam, M. M. Hossain, and H. A. Mantooth, " DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET," 2026 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, Texas, USA, 2026. (Accepted)

[11] A. S. M. K. Hasan, M. D. Rahaman, M. M. Islam, M. M. Hossain, and H. A. Mantooth, "SEU Effect in E-Mode β-Ga2O3 MOSFET with Epitaxial Drift Layer at the Breakdown Region," 2025 Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Fayetteville, AR, USA, 2025. (Accepted)

[12] A. S. M. K. Hasan, M. D. Rahaman, T. Akter, M. M. Islam, M. M. Hossain, X. Song, and H. A. Mantooth, "Compact Model of β-Ga2O3 Schottky Barrier Diode," 2025 IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, GA, USA, 2025, pp. 2407-2412, doi: 10.1109/APEC48143.2025.10977072.

[13] A. S. M. K. Hasan, M. M. Hossain, P. C. Heris and H. A. Mantooth, "Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region," 2024 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2024, pp. 2461-2467, doi: 10.1109/APEC48139.2024.10509030.

[14] A. S. M. K. Hasan, M. M. Hossain and H. A. Mantooth, "A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling," 2022 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, 2022, pp. 1-8, doi: 10.1109/ECCE50734.2022.9947969.

[15] A. S. M. K. Hasan, M. Z. Islam, N. Vail, J. Venker, M. M. Hossain and H. A. Mantooth, "Threshold Voltage Extraction Method for Low-Voltage SiC MOSFETs at High-Temperature," 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 2023, pp. 5813-5818, doi: 10.1109/ECCE53617.2023.10362775.

[16] A. S. M. K. Hasan, I. Bhogaraju, M. Farasat, and M. Malisoff, "Lyapunov Function-Based Stabilizing Control Scheme for Wireless Power Transfer Systems with LCC Compensation Network," 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Phoenix, AZ, USA, 2021, pp. 694-699, doi: 10.1109/APEC42165.2021.9487420.

[17] A. S. M. K. Hasan, D. Chowdhury and M. Z. R. Khan, "Scalable DC Microgrid Architecture with a One-Way Communication Based Control Interface,"2018 10th International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, 2018, pp. 265-268, doi: 10.1109/ICECE.2018.8636706.

[18] A. S. M. K. Hasan, D. Chowdhury and M. Z. R. Khan, “Performance Analysis of a Scalable DC Microgrid Offering Solar Power Based Energy Access and Efficient Control for Domestic Loads,” 2018 International Conference on Developments in Renewable Energy Technology (ICDRET), Kathmandu, Nepal, Mar 2018. doi: arxiv.org/pdf/1801.00907.pdf

[19] A. S. M. K. Hasan, R. Rahman, and M. A. Haque, “Direct strain estimation for ultrasound elastography using peak frequency ratio of radiofrequency echo signals,” International Conference on Electrical and Computer Engineering (ICECE), December 2014. DOI: 10.1109/ICECE.2014.7026930.

[20] M. D. Rahaman, T. Akter, A. S. M. K. Hasan, H. U. Rehman, Y. Chen, H. A. Mantooth and X. Song, “Design and Evaluation of a 650 V, 300 a GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout," 2025 Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Fayetteville, AR, USA, 2025. (Accepted)

[21] T. Akter, M. D. Rahaman, A. S. M. K. Hasan, Y. Chen, H. A. Mantooth and X. Song, “Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module," 2025 IEEE Energy Conversion Congress and Exposition (ECCE), Philadelphia, PA, USA, 2025. (Accepted)

[22] M. D. Rahaman, A. S. M. K. Hasan, H. A. Mantooth and X. Song, "High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor," 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Dayton, OH, USA, 2024, pp. 1-6, doi: 10.1109/WiPDA62103.2024.10773107.

[23] M. Z. Islam, J. Venker, A. S. M. K. Hasan, J. Dix, and H. A. Mantooth, "A 0.8 V Bandgap Voltage Reference with High PSRR for Low-dropout Voltage Regulator in 22nm FDSOI", IECON 2024 - 50th Annual Conference of the IEEE Industrial Electronics Society, Chicago, IL, USA, 2024, pp. 1-6, doi: 10.1109/IECON55916.2024.10905924.

[24] Y. Chen, X. Du, L. Du, X. Du, A. S. M. K. Hasan, X. Li, H. Chen, R. Paul, S. Chinnaiyan, Y. Zhao, and H. A. Mantooth, "3.3 kV Low-Inductance Full SiC Power Module," 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), Orlando, FL, USA, 2023, pp. 2634-2640, doi: 10.1109/APEC43580.2023.10131290.

[25] M. M. Hossain, K. Shein, A. S. M. K. Hasan, Y. Wei and H. A. Mantooth, “Deep Cryogenic Characterization of GaN HEMT at 4K” 2023 AIAA/IEEE Electric Aircraft Technologies Symposium (EATS), San Diego, CA, USA, 2023, doi: https://doi.org/10.2514/6.2023-4128.

[26] N. Hasan, A. S. M. K. Hasan and M. R. T. Hossain, "An Weak Bus Based Bridgeless Charger for Three Wheeler EVs," 2022 IEEE 1st Industrial Electronics Society Annual On-Line Conference (ONCON), kharagpur, India, 2022, pp. 1-6, doi: 10.1109/ONCON56984.2022.10126928.

[27] D. Chowdhury, A. S. M. K. Hasan and M. Z. R. Khan, “Scalable DC Microgrid Architecture with Phase Shifted Full Bridge Converter Based Power Management Unit,” International Conference on Electrical and Computer Engineering (ICECE), 2018.

[28] S. D. Rahman, A. S. M. K. Hasan and R. Rahman, “Detection and Classification of Premature Ventricular Contraction by ECG Feature Extraction,” International Conference on Medical Physics in Radiation Oncology & Imaging (ICMPROI), Dhaka, Bangladesh, August 2014