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Abu Shahir Md Khalid Hasan
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Abu Shahir Md Khalid Hasan
  • Home
  • Education
  • Experience
  • Research
  • Review
  • Video and Photos
    • Milky-way Timelapse
  • Achievements
  • Contact
  • More
    • Home
    • Education
    • Experience
    • Research
    • Review
    • Video and Photos
      • Milky-way Timelapse
    • Achievements
    • Contact
  1. G. Deng, X. Bi, R. Liu, Y. Yan, C. Yang, J. Wei, B. Zhang, and X. Luo, "Enhancing Buck Converter Efficiency by Using GaN/Si Hybrid Switches to Suppress Dynamic ON-state Resistance", 2025 (TPEL-2025-01-0220)

  2. W. Manzoor, A. K. Dutta, G. Pahwa, N. Manzoor, C. Hu and Y. Singh Chauhan, "Extending Standard BSIM-BULK Model to Cryogenic Temperatures," in IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4510-4516, Aug. 2024, doi: 10.1109/TED.2024.3419783. (TED-2024-02-0433)

  3. "A Dual-Trap Tunneling Model Incorporating Near-Interface Oxide Trap Dynamics for Long-Term BTI Prediction of SiC MOSFETs" (TPEL-RegAP-2025-03-0698) - REJECTED

2. ECCE 2024

Paper ID: 173  Title: Methodology for Evaluation of Commercial High-Power SiC Modules at Consistent Switching Speeds     Final decision:  ACCEPTED

Paper ID:  206 Title: An Improved Decentralized Control System for Grid-Tied Series-Connected PV Inverters         Final decision:  ACCEPTED

Paper ID: 294 Title: Study of a passive approach for improving transient current sharing among paralleled SiC MOSFETs         Final decision: REJECTED

Paper ID: 403 Title: A Modulation Scheme for Dynamic AC Power Cycling Based on the Opposition Method         Final decision: ACCEPTED

Paper ID: 510  Title: Evaluation of the First and Third Quadrant Performance of SiC MOSFET Hybrid Switches with Reverse Conducting IGBTs         Final decision: ACCEPTED

Paper ID: 542  Title: Analyzing the Impact of Total Ionizing Dose on SiC Resonant Boosting Converters: A Thermal Model Perspective with Gate Oxide Degradation Insights Final decision:  REJECTED

Paper ID: 632 Title: Novel Cell-Level Insights into Third Quadrant Current Paths of Power SiC MOSFET   Final decision: ACCEPTED 

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