REVIEWS
IEEE Transactions on Power Electronics – [2 reviews in 2025]
IEEE Transactions on Electron Devices – [1 review in 2024]
IEEE Electron Devices Reviews – [1 review in 2025]
IEEE Energy Conversion Congress and Expo (ECCE) – [15 reviews (7 in 2024, 8 in 2025)]
IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) – [1 review in 2025]
IEEE Applied Power Electronics Conference and Exposition (APEC) – [1 review in 2025]
REVIEWS DETAILS
IEEE Transactions on Power Electronics
G. Deng et al., "Enhancing Buck Converter Efficiency by Using GaN/Si Hybrid Switches to Suppress Dynamic On-State Resistance," in IEEE Transactions on Power Electronics, vol. 40, no. 10, pp. 14425-14436, Oct. 2025, doi: 10.1109/TPEL.2025.3574138.
Manuscript ID: TPEL-RegAP-2025-03-0698
Manuscript Title: "A Dual-Trap Tunneling Model Incorporating Near-Interface Oxide Trap Dynamics for Long-Term BTI Prediction of SiC MOSFETs"
IEEE Transactions on Electron Devices
W. Manzoor, A. K. Dutta, G. Pahwa, N. Manzoor, C. Hu and Y. Singh Chauhan, "Extending Standard BSIM-BULK Model to Cryogenic Temperatures," in IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4510-4516, Aug. 2024, doi: 10.1109/TED.2024.3419783.
IEEE Electron Devices Reviews
Manuscript ID: EDR-0008-Sep-2025
Manuscript Title: "Modeling of Wide and Ultra-Wide Bandgap Semiconductor Schottky Barrier Diodes"
ECCE 2025
Paper ID: 1158
Paper Title: In-Circuit Stress Emulation Universal Reliability Platform of GaN HEMTs with Online Monitoring and Offline Characterization
Paper ID: 1232
Paper Title: Discrete GaN HEMTs Experimental Characterization and Comparison for the Design of Power Converters in Traction Applications
Paper ID: 1252
Paper Title: Partial-RC Snubber Gate Driver for Gate-Source Voltage Oscillation Suppression for GaN Devices
Paper ID: 1551
Paper Title: Efficient Topology for Switching Accelerated Lifetime Testing of GaN HEMTs Using High-Frequency Inductive Hard Switching
Paper ID: 1630
Paper Title: Ultrafast Noise-Immune Short-Circuit Detection in Gallium Nitride Power Semiconductors via Drain-Source Voltage Pattern Recognition
Paper ID: 1749
Paper Title: A MULTI-LEVEL-VOLTAGE-Output Gate Driver FOR DYNAMIC ON-Resistance Suppression in Discrete GAN-HEMTS
WiPDA 2025
Paper ID: 1571177235
Paper Title: 'Low Turn-on Voltage β-Ga2O3 Heterojunction Barrier Schottky Diodes with Tungsten Schottky Contact'